D42S Search Results

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The D42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //D42S16800, 42S17800 can execute CAS before RAS self refresh.

D42S

Abstract: MFT-D42S IP20Mounting MR78 type sl4 Selectron
Contextual Info: Multifunctional time delay relay digital MFT D42S • 22 Functions, time range up to 999 hours • Multivoltage: 12 . 240 Vdc and 24 . 240 Vac • 2 Output contacts MFT D42S Functions D Digital F00, F10 F01, F11 F02, F12 F03, F13 F04, F14 F05, F15 F06, F16

6513D

Abstract: LC6505C LC6512D LC6502B LC6502C LC6502D LC6500 LC6500 SERIES USFRS MANUAL 6502D 6505D
Contextual Info: Ordering number:EN2367B CMOS IC LC6512A, LC6513A Single-Chip 4-Bit Microcomputer for Control-Oriented Applications Low-Threshold Input, On-Chip FLT Driver Package Dimensions unit:mm 3025B-D42SIC [LC6512A] 42 22 0.25 The LC6512A, 6513A are microcomputers that are dentical

Contextual Info: MOS INTEGRATED CIRCUIT r>D42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The /¿D42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynam ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿D42S16800L, 42S17800L can execute CAS before RAS self refresh see

LC6505C

Abstract: LC6502D LC6500 SERIES USFRS MANUAL LC6512D LC6500 LC6512A
Contextual Info: Ordering number:EN2367B CMOS IC LC6512A, LC6513A Single-Chip 4-Bit Microcomputer for Control-Oriented Applications Low-Threshold Input, On-Chip FLT Driver Package Dimensions unit:mm 3025B-D42SIC [LC6512A] 42 22 0.25 The LC6512A, 6513A are microcomputers that are dentical

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

Contextual Info: PIN & SLEEVE DEVICES line of industrial plugs and sockets are manufactured by ABL Sursum, a company well known in Europe for its quality electrical products. This major manufacturer combines the elements of good design, high quality, safety, ease of installation and competitive

D42S4400

Abstract: NEC 424400
Contextual Info: N EC ELECTRONICS INC NEC Electronics Inc. b l E D • b4B7SB5 DQ33b3G T3? M N E C E pPD424400, 424400A/L, 42S4400A/L 1,048,576 X 4-Bit Dynamic CMOS RAM T - H í - X j » -/< ? Description Features The devices listed below are fast-page dynamic RAMs organized as 1,048,576 words by 4 bits and designed to

D42S18160

Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
Contextual Info: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿D42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.

001107

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n T h e/iP D 42S 16 405L , 4216405L a re 4 ,1 94,304 words by 4 bits CMOS dynam ic RAM with optional hyper page mode

424260 NEC

Abstract: 424260-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿D42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte

Contextual Info: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT /D42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e ¿ P D 42S16400L, 4 21 6 4 0 0 L , 4 2 S 1 7 4 0 0 L , 4 2 1 7 4 0 0 L a re 4 194 3 0 4 w o r d s b y 4 b its d y n a m ic C M O S R A M s .

Contextual Info: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features

Contextual Info: NEC 3CT 2 e 1992 NEC Electronics Inc. fiPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM Preliminary Information Description The ¿¿PD424190A/L and /D42S4190A/L are fast-page dynam ic RAMs organized as 262,144 words by 18 bits and designed to o perate from a single pow er supply.

Contextual Info: NEC pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /D42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or

NEC uPD 688

Abstract: UPD4217400LG3-A60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //D42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/D42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The

d4217400

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //D42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿D42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The

s2603

Abstract: 161NE
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / jtfP D 4 2 S 1 6 4 0 5 , 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D escrip tio n The /iPD 42S 18405,4219406 are 4,104,304 words by 4 bits C M O S dynam ic R A M s with optional hyper page mode

PD4264805G5-A60-7JD

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT D42S64805,4264805,42S65805,4265805 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The /D42S64805, 4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

SL680C

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /D42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The

d42s65405g5

Abstract: NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ //¿D42S64405,4264405,42S65405,4265405 64M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The /¿D42S64405, 4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO >s a kind of the page mode and is useful for the read operation.

4216100

Abstract: 4216100-70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT D42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿D42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /D42S16100, 42S17100 can execute CAS before RAS self refresh. They

D4242

Abstract: 3V07
Contextual Info: NEC NEC Electronics Inc. Description The /L/PD424263A/L and /D42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or

6400L-A5G

Abstract: d4216400
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿D42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /D42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The