TR MARKING CODE L5 Search Results

SOT143 Marking l51

Abstract: code l51 L51 transistor marking sot-143 BAS56
Contextual Info: Central BAS56 TM Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an

SOT143 DUAL DIODE

Abstract: BAS56
Contextual Info: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar

marking code tr4

Abstract: NK4 RESISTOR melf blue tr505 tr4 vishay n 332 ab C40101-019
Contextual Info: A COMPANY OF VISHAY Standard C O M P O N E N T S U.K. METAL FILM NK./TR./FP. Features • low noise • exceptional high frequency characteristics • approved to BS CECC/BT/M O D • proven high reliability • Qualified to CEC C40101-019 Style Style

Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for

10N70P

Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for

marking codes transistors SSs

Abstract: AP9578GP
Contextual Info: AP9578GS/P RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 160mΩ ID G -10A S Description The Advanced Power MOSFETs from APEC provide the designer with

marking codes transistors SSs

Abstract: AP4002 4002p tr marking code l5 AP4002P PDTC* MARKING CODE 07
Contextual Info: AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G BVDSS 600V RDS ON 5Ω ID 2A S Description Advanced Power MOSFETs from APEC provide the designer with

4407gp

Abstract: AP4407GS 4407gs marking codes transistors SSs 2120 to220
Contextual Info: AP4407GS/P RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 14mΩ ID G -50A S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: AP4407GS/P RoHS-compliat Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D -30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 14m -50A S Description Advanced Power MOSFETs from APEC provide the designer with

9578GP

Abstract: ap9578 AP9578GP
Contextual Info: AP9578GS/P RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 160mΩ ID G -10A S Description Advanced Power MOSFETs from APEC provide the

75T10GP

Abstract: marking codes transistors SSs 75T10GS AP75T10GS AP75T10GP
Contextual Info: AP75T10GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 100V RDS ON 15mΩ ID G 65A S Description Advanced Power MOSFETs from APEC provide the designer with

SOT89 voltage regulator marking code 93

Abstract: APL5156 A10* sot23-5 APL5156BI APL5156-33 APL5156 SOT89 SOT89 regulator marking code 93 marking JC SOT23-5 marking 121 SOT23-5 marking CA sot23-5
Contextual Info: APL5156 High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features General Description • • • • • • The APL5156 is a low ground current linear regulatoer, which operates with input voltage from 6.5V to 25V and delivers output current up to 150mA. Typical dropout

APL5156

Abstract: marking CA sot23-5 A10* sot23-5 marking code CE SOT23-5 marking RH sot23-5 APL5156-33 marking code R2 sot23 sot23-5 Marking sot23-5 package marking APL5156-50
Contextual Info: APL5156 High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features General Description • • • • • • The APL5156 is a low ground current linear regulator, which operates with input voltage from 6.5V to 25V and delivers output current up to 150mA. Typical dropout

BAS56

Abstract: smd marking l5
Contextual Info: BAS56 High-speed double diode Rev. 3 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not

sot-353 he Inverter

Abstract: SOT-353 MARKING L5 tr marking code l5 marking nc sot-353
Contextual Info: NL17SZ04 Single Inverter The NL17SZ04 is an inverter in two tiny footprint packages. The device performs much as LCX multi−gate products in speed and drive. Features • • • • • • • • Tiny SOT−353 and SOT−553 Packages 24 mA Sink and Source Output Capability

85t08gp

Abstract: AP85T08GS AP85T08GP marking codes transistors SSs 85T08GS Advanced Power Electronics
Contextual Info: AP85T08GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 80V RDS ON 13mΩ ID G 75A S Description The Advanced Power MOSFETs from APEC provide the designer with

95T06GP

Abstract: AP95T06GS AP95T06GP 95T06GS marking codes transistors SSs
Contextual Info: AP95T06GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 60V RDS ON 8.5mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the designer with

92T03GP

Abstract: AP92 AP92T03GP 92t03 92T03GS
Contextual Info: AP92T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 30V RDS ON 4mΩ ID G 80A S Description Advanced Power MOSFETs from APEC provide the designer with

92T0

Contextual Info: AP92T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 30V RDS ON Lower On-resistance Fast Switching Characteristic 4m ID G 80A S Description Advanced Power MOSFETs from APEC provide the designer with

diode marking L5 sot363

Abstract: VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking
Contextual Info: _ SM906DL Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS<on) (Œ ) lD (mA) 2.0 9 V q s = 4.5 V 250 2.5 V GS = 2.5 V 150 V DS(V) 20 SOT-363 S C-70 (6*Leads) Marking Code XX £ Lot Traceability

AP40T10GP

Abstract: 40T10GP 39ag 40T10
Contextual Info: AP40T10GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test BVDSS 105V ▼ Single Drive Requirement RDS ON 35mΩ ▼ Fast Switching Characteristic ID D 39A G S Description Advanced Power MOSFETs from APEC provide the

90T03P

Abstract: AP90T03P 90T03P diode DSA00295258
Contextual Info: AP90T03P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 4mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the designer with

40p03gp

Abstract: 40P03G AP40P03GP 40p03 AP40P03
Contextual Info: AP40P03GP RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 28mΩ ID G -30A S Description The Advanced Power MOSFETs from APEC provide the designer with

09N70P

Abstract: 09n70 AP09N70P-A 09N7
Contextual Info: AP09N70P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ 100% Avalanche Test D BVDSS 650V RDS ON 0.75Ω ▼ Fast Switching ▼ Simple Drive Requirement GG ID ▼ RoHS Compliant 9A S S Description The TO-220 package is widely preferred for all commercial-industrial