TRANSISTOR -25 F7 Search Results

TLN103

Abstract: TLN108 TPS605LB
Contextual Info: Photo Transistor - F7 Transistor Type Classification Type N a Package S TPS601A TPS604 Metal To-18 TPS614 05 D O O O Electro-optical Characteristics Ta=25“C MIN (MA) 100 SK o TPS610 7 (dge) V ce MAX (V) Vistole Light

SSTA65

Abstract: SSTA64
Contextual Info: □IE No. r PNP Darlington TRANSISTOR DIE! No. IMAXIMUM RATINGS TA=25°C Free Air Parameter B— 25 Symbol Value Unit Collector-Emitter Voltage VcEO 30 V Collector-Base Voltage VcBO 40 V Emitter-Base Voltage V ebo 10 V 500 mA Collector Current Continuous

FJC690

Abstract: FJC790
Contextual Info: FJC790 FJC790 Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 Marking: F79 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

mosfet power inverter

Contextual Info: V23990-P622-F74-PM final data sheet flow0 V23990-P622-F74-01-14 Maximum Ratings Parameter P622-F74 600V/30A Condition Symbol Datasheet values Unit max. Transistor H-bridge MOSFET Drain to source voltage 600 V Id 32 A Idpuls 115 A Pulsed drain current Tj=25°C

TLP850

Abstract: TLP1240 TLP852 TLP851 TLP807 TLP809 TLP8 TLP1225 TLP1230
Contextual Info: F7 Electro-optical Characteristics Ta-25*C Classification Photo Darlington Transistor Output VCE MAX (V) lo MAX (nA) 250 Typ« No. Gap (mm) Slit Width (mm) lF(mA) V ce(V) TLP507A 3 1 30 10 2 30 TLP850 5 1 40 10 2 30 250 TLP851 5 0.5 20 10 2 30 250 MIN TLP852

transistor QB

Contextual Info: KSR2104 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor ^ = 4 7 X 1 2 , R2=47Ki2) • Complement to KSR1104 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

Contextual Info: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C

transistor 2n3704

Abstract: "Die No." transistor mps3704
Contextual Info: □ IE NO. NPN Medium TRANSISTOR DIE No. •MAXIMUM RATINGS T a= 25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 70 V Emitter-Base Voltage V ebo 6 V Parameter D—11 ■ DESCRIPTION Collector Current Continuous

Contextual Info: DIE No. r PNP Medium Power TRANSISTOR DIE No. •MAXIMUM RATINGS T a= 25°C Free Air Parameter B—11 ■ DESCRIPTION r Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 50 V Emitter-Base Voltage V ebo 6 V 800 mA Collector Current Continuous

Contextual Info: TOSHIBA 2SC4253 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE I mm h t i r TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. U nit in mm 2.1 ± 0.1 • Good Linearity of fp- 1 .2 5 ± 0 .1 oo + 1 1 - MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING

J555

Abstract: 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-6 F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj

sa0565

Abstract: BAIF4M BA1F4M
Contextual Info: r IV E C ^?T/\f7 ir S * S'—b a-g-h^ Compound Transistor BA1 F4M i£StrtlNPNxti?*'>7rJU •' m m ★ o T x iS f it £ L T ^ £ -to 4.0 ±0.2 6” R i = 22 k fi, R 2= 22 k f i ) 2 6’ -0.50 O B N 1 F 4 M £ =7 > 7 °'J / > ? U « ^ i # ( T a = n 25 °C )

T77b

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor L o g i c level F E T PHP55N03LT, PHB55N03LT, PHD55N03LT SY M B O L F E A TU R ES QUICK RE FE R E N C E DATA V dss - 25 V • ’Trench’ technology

ON586

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor Logic level FET SY M B O L F E A TU R ES • • • • • • PHP87N03LT, PHB87N03LT QUICK RE FE R E N C E DATA Vdss - 25 V ’T rench’ technology

Contextual Info: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

transistor motorola 114-8

Abstract: 552 MOSFET TRANSISTOR motorola 552 transistor motorola s7p03
Contextual Info: M O TO RO LA Order this document by MMSF7P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F7P 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET

bl 565 transistor

Abstract: BF748 f748 IEC134 702 y TRANSISTOR aC/DC/cpu 224 aC/DC/f748
Contextual Info: Philips Semiconductors bbsa^l 0031005 Ö42 • APX Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 U'lE 3>“ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

Contextual Info: MOTOROLA Order this document by MMSF7P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F7P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 30 VOLTS

MC 931 transistor

Abstract: S7N03
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M M S F7N 03H D Medium Power Surface Mount Products M o to ro la P re fe rre d D e v ic e TMOS Single N-Channel Field Effect Transistors M iniM O S'" devices are an advanced series of power MOSFETs

TLRA280

Abstract: TLP1007A TLRC280
Contextual Info: Photo interrupters P hoto IC O utput F7 Electro-optical Characteristics (Ta=25°C) Classification Photo IC Output Type No. Output Level (With Light) TLP1000A “H” TLP1001A “L" TLP1002A “H” TLP1003A “L” TLP1004A “H” TLP1005A “L” TLP1006A

Contextual Info: 853 FIBER SENSORS Leak Detection Sensor Amplifier Built-in EX-F70 SERIES EX-F60 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~

F75383

Abstract: F75393 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta
Contextual Info: F75393 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.16P F75393 F75393 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/23 - Preliminary Version V0.11P 2007/9/20 - Add register description V0.12P

Contextual Info: h 7 > y ^ $ / T ransistors g 2 Q 1 2 2 8 M e 1 ^ u N P N ^ 1 3 > h ^ > 7 * rfjiE S /D im e n sio n s Unit : mm t t * 1) VCE ( sa. is ^ 7 Epitaxial Planar NPN Silicon Transistor Power Amp. Z S D Io O O • 2SD1228M/2SD1860 X -f7 f iz'iM b X o 9 0 m V (T y p .) ( I c = 1 5 0 m A l B = 1 5 m A )

EX-F71

Abstract: EX-F72 EX-F71-PN EX-F62-PN EX-F61-PN transistor a 1413
Contextual Info: EX-F60/70 Photoelectric Sensors Leak Detection Sensor The EX-F70/F60 series of leak detection sensors offer a unique and reliable method of protecting your equipment against leaks. Using a capillary effect, the sensor utilizes the change in refractive index to detect small leaks and viscous liquids. The