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    TRANSISTOR 07N60S5 Search Results

    TRANSISTOR 07N60S5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 07N60S5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    07N60S5

    Abstract: 07N60 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 C2608 Q67040-S4172
    Contextual Info: SPI07N60S5 Preliminary data SPP07N60S5, SPB07N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


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    SPI07N60S5 SPP07N60S5, SPB07N60S5 SPPx3N60S5/SPBx3N60S5 P-TO220-3-1 07N60S5 Q67040-S4172 P-TO263-3-2 07N60S5 07N60 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 C2608 Q67040-S4172 PDF

    07n60s5

    Abstract: 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5
    Contextual Info: SPI07N60S5 SPP07N60S5, SPB07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


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    SPI07N60S5 SPP07N60S5, SPB07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 Q67040-S4172 07n60s5 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5 PDF

    SPI07N60S5

    Abstract: 07N60S5 SPPX3N60S5
    Contextual Info: SPI07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


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    SPI07N60S5 SPPx3N60S5 P-TO262 07N60S5 Q67040-S4249 SPI07N60S5 07N60S5 SPPX3N60S5 PDF

    07N60S5

    Abstract: infineon 07n60s5 SPB07N60S5 SPP07N60S5
    Contextual Info: SPP07N60S5 SPB07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


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    SPP07N60S5 SPB07N60S5 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 P-TO220-3-1 07N60S5 Q67040-S4172 P-TO263-3-2 07N60S5 infineon 07n60s5 SPB07N60S5 PDF

    Q67040-S4186

    Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated


    Original
    SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 P-TO251-3-1 P-TO252 07N60S5 Q67040-S4186 PDF

    07N60S5

    Abstract: SIEMENS 07N60S5 SPB07N60S5 SPP07N60S5 07N60 WA80
    Contextual Info: SPP07N60S5 SPB07N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


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    SPP07N60S5 SPB07N60S5 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 P-TO220-3-1 P-TO263-3-2 07N60S5 Q67040-S4172 07N60S5 SIEMENS 07N60S5 SPB07N60S5 07N60 WA80 PDF

    07n60s5

    Abstract: transistor 07n60s5 infineon 07n60s5 Q67040-S4172 Q67040-S4328 SMD TRANSISTOR MARKING 2.x
    Contextual Info: SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.6 Ω • Optimized capacitances


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    SPI07N60S5 SPP07N60S5, SPB07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 SPB07N60S5 SPI07N60S5 P-TO220-3-1 07n60s5 transistor 07n60s5 infineon 07n60s5 Q67040-S4172 Q67040-S4328 SMD TRANSISTOR MARKING 2.x PDF

    SPU07N60S5

    Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
    Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6


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    SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4186 07n60s5 infineon 07n60s5 PDF

    infineon 07n60s5

    Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


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    SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 SPUx3N60S5/SPDx3N60S5 Q67040-S4196 infineon 07n60s5 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 PDF

    07n60s5

    Abstract: SPP07N60S5 PG-TO263-3-2 SPB07N60S5 transistor 07n60s5
    Contextual Info: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


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    SPB07N60S5 PG-TO263 Q67040-S4185 07N60S5 07n60s5 SPP07N60S5 PG-TO263-3-2 SPB07N60S5 transistor 07n60s5 PDF

    Contextual Info: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


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    SPB07N60S5 P-TO263-3-2 SPB07N60S5 Q67040-S4185 07N60S5 PDF

    Contextual Info: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


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    SPB07N60S5 PG-TO263 Q67040-S4185 07N60S5 PDF

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Contextual Info: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


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    SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 PDF

    07N60S5

    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


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    SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5 PDF

    07n60s5

    Abstract: SPD07N60S5 SPU07N60S5 Q67040-S4186
    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


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    SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 SPD07N60S5 SPU07N60S5 Q67040-S4186 PDF

    07n60s5

    Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


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    SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5 PDF

    07N60S5

    Abstract: transistor smd code marking nc
    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


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    SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5 07N60S5 transistor smd code marking nc PDF

    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


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    SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5 PDF

    07N60S5

    Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated


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    SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262-3 07N60S5 PDF

    Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3-1 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated


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    SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3-1 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262 PDF

    Contextual Info: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances


    OCR Scan
    SPU07N60S5 SPD07N60S5 O-251 SPU07N60S5 P-T0251 07N60S5 Q67040-S4196 P-T0252 PDF

    07n60s5

    Abstract: transistor 07n60s5 Q67040-S4172 SPB07N60S5 SPI07N60S5 SPP07N60S5 infineon 07n60s5
    Contextual Info: SPP07N60S5, SPB07N60S5 SPI07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 P-TO262 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1


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    SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 Q67040-S4172 07N60S5 07n60s5 transistor 07n60s5 Q67040-S4172 SPB07N60S5 SPI07N60S5 SPP07N60S5 infineon 07n60s5 PDF

    07n60s5

    Abstract: SPI07N60S5 SPP07N60S5
    Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated


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    SPP07N60S5 SPI07N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4172 07N60S5 07n60s5 SPI07N60S5 SPP07N60S5 PDF

    07n60s5

    Abstract: SPI07N60S5 SPP07N60S5 Q67040-S4328
    Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated


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    SPP07N60S5 SPI07N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4172 07N60S5 07n60s5 SPI07N60S5 SPP07N60S5 Q67040-S4328 PDF