TRANSISTOR 100MHZ Search Results
TRANSISTOR 100MHZ Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR 100MHZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DUAL TRANSISTORContextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc. |
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OT-363 QW-R218-024 DUAL TRANSISTOR | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor. FEATURES * Built-in bias resistors that implies easy ON/OFF applications. |
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UD22K UD22K UD22KG-AL6-R OT-363 QW-R221-020 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference. |
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OT-26 QW-R218-018 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). |
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2SB1424 2SB1424 2SB1424G-x-AB3-R OT-89 QW-R208-044 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference. |
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OT-26 QW-R218-020 | |
n24 transistorContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are |
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MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are |
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MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j | |
DSA00897Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are |
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MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R OT-363 QW-R218-017 DSA00897 | |
2SB1424Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). |
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2SB1424 2SB1424 2SB1424L 2SB1424G 2SB1424-x-AB3-R 2SB1424L-x-AB3-R 2SB1424G-x-AB3-R OT-89 QW-R208-044 | |
2N3904
Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
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2N3904 2N3906 OT-23 MMBT3904 2N3904 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download | |
2n3904 transistor
Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
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2N3904 O--92 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz 2n3904 transistor 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP | |
2n3906 equivalent transistor
Abstract: 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain
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2N3906 2N3904 OT-23 MMBT3906 2n3906 equivalent transistor 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA13 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC MAS = 350 mW |
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MMBTA13 MMBTA13 MMBTA13L-AE3-R MMBTA13G-AE3-R OT-23 QW-R206-006 | |
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DUAL TRANSISTORContextual Info: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two MMBT2907A chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA EQUIVALENT CIRCUITS |
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IMT17 MMBT2907A -500mA IMT17L-AG6 IMT17G-AG6-R OT-26 QW-R215-006 DUAL TRANSISTOR | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC MAX = 1W ORDERING INFORMATION |
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PZTA14 PZTA14 PZTA14L-AA3-R PZTA14G-AA3-R OT-223 QW-R207-004, | |
mpsa13l
Abstract: mpsa13 MPSA13G
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MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K MPSA13L-T92-A-B mpsa13l MPSA13G | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA13 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION 3 The UTC MMBTA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC MAS = 350 mW |
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MMBTA13 MMBTA13 OT-23 O-236) MMBTA13G-AE3-R QW-R206-006 | |
UN1518
Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor
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UN1518 UN1518L UN1518-AE3-R UN1518L-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor | |
MPSA13L
Abstract: utc mpsa13
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MPSA13 MPSA13 OT-89 MPSA13-AB3-R MPSA13L-AB3-R MPSA13G-AB3-R MPSA13-T92-B MPSA13L-T92-B MPSA13G-T92-B MPSA13-T92-K MPSA13L utc mpsa13 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Ordering Number Normal Lead Free |
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MPSA113 MPSA113 OT-89 MPSA113-AB3-R MPSA113L-AB3-R MPSA113G-AB3-R MPSA113-T92-B MPSA113L-T92-B MPSA113G-T92-B MPSA113-T92-K | |
Contextual Info: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA |
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IMX17 2SD1484K 500mA OT-26 QW-R215-001 500mA, 100mA -20mA, 100MHz | |
MPSA13LContextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Order Number Package Lead Free |
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MPSA13 MPSA13 MPSA13L-AB3-R MPSA13G-AB3-R OT-89 MPSA13L-T92-B MPSA13G-T92-B MPSA13L-T92-K MPSA13G-T92-K QW-R208-001 MPSA13L | |
diode r207
Abstract: PZTA14
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PZTA14 PZTA14 PZTA14L PZTA14G PZTA14-AA3-R PZTA14L-AA3-R PZTA14G-AA3-R OT-223 QW-R207-004 diode r207 |