MPSA13 Search Results

mps a13

Abstract: kmpsa13 mpsa13 K MPS KMPS-A13 MPS-A13 MPS series transistor a13 A13 MARKING DSA0010574
Contextual Info: SEMICONDUCTOR MARKING SPECIFICATION MPSA13 TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS A13 801 No. Item Marking 1 KEC K 2 Description KEC CORP. MPS Series Name A13 Device Name Device Name 3 4 98.06.23 Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

MPSA13L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free

mpsa13 636

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA

Contextual Info: MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V

transistor mpsa 250

Abstract: transistor mpsa 13 equivalent mpsa14 MPSA13 MPSA14
Contextual Info: MPSA13 MPSA14 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC

MPSA13

Abstract: MPSA12 MPSA14 mpsa13 central
Contextual Info: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

mpsa13

Abstract: mps-a13 mpsa14
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors FEATURES MPSA13; MPSA14 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 • High DC current gain (min. 10000). 2 base 3 em itter collector APPLICATIONS

MPSA14M

Contextual Info: MCC TM Micro Commercial Components MPSA13 MPSA14
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA

MPSa14 equivalent

Abstract: mpsa13 equivalent mpsa14 MPSa13 equivalent MPS-A13 PSA13
Contextual Info: TOSHIBA DARLINGTON TRANSISTOR M PSA13,14 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS. FEATURE: High DC Current Gain @ Ic=100mA MPSA13 hFE=10,000 Min. MPSA14 hFE=20,000 Min. 1. EMITTER 2. BASE a COLLECTOR

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

Contextual Info: SAMSUNG ELECTRONICS INC 42E D Hi 7=1134142 GOOIOSfl T ElSMGK NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA13 DARLINGTON TRANSISTOR • Collector-Em itter Voltage: V Ce s = 30V • C ollector Dissipation: P 0 max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: MCC TM Micro Commercial Components MPSA13 MPSA14
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA

FPQ3725

Abstract: 2n999 FPQ3724 FPQ-3724
Contextual Info: TRANSISTORS— MULTIPLE TRANSISTORS NPN DARLINGTON AMPLIFIER TRANSISTORS NUMERIC LISTING METAL AND PLASTIC PACKAGE V CEO VOLTS TYPE MHz ^ob pF MIN MAX h FE hFE MIN - MAX MIN @ •c mA PD V 2 5 "c mW Package 310 TO-92 MPSA12 20 20000 @ 10 MPSA13 30 5000 @

mpsa13l

Abstract: mpsa13 MPSA13G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free

MPSA13

Abstract: MPSA14
Contextual Info: MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 0.625 PCM: 3 W Tamb=25℃ 1 2 3 Collector current ICM: 0.5 A Collector-base voltage

mpsa65

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30

n3904

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

Contextual Info: P e> MPSA13 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR Package: TO-92 * Collector-Emitter Voltage Vces=30V * Collector Dissipation Pc max =625 mW (Ta=25°C) ABSOLUTE MAXIMUM RATINGS at Tanrt-25*C

MPSA13

Abstract: MPSA14 MMBTA14 MMBTA13
Contextual Info: MPSA13 and MPSA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector TO-226AA (TO-92) Base 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for

c 458 c transistor

Abstract: MPSA13 transistor c 458
Contextual Info: MPSA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

MPSA63

Abstract: MPSA13 MPSA62 MPSA64
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ᴌComplementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING Ta=25ᴱ Voltage MPSA63/64 Collector-Emitter