TRANSISTOR 1094 Search Results

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GENERAL DESCRIPTION PHX1N50E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

LD25V

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GEN ER AL DESCRIPTION PHX1N50E QUICK R EFEREN CE DATA N-channel enhancement mode field-effect power transistor in a fuf! pack, plastic envelope featuring high avalanche energy capability, stable

PH3230

Abstract: SOT669-LFPAK sot669 package
Contextual Info: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).

BFR91 philips

Contextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

QS 100 NPN Transistor

Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
Contextual Info: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use

smd optocoupler

Abstract: TCMT1020 TCMT1021 TCMT1024 TCMT1022 TCMT1023 tcmt1020 temic tcmt1024 temic
Contextual Info: TCMT1020 Series TELEFUNKEN Semiconductors SMD Optocoupler with Phototransistor Output Description The TCMT1020 Series consist of a gallium arsenid infrared emitting diode, optically coupled to a silicon NPN epitaxial planar transistor in a 8 lead SOIC package.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

transistor BC 182l

Abstract: bc182l bc182* transistor transistor bc182l
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182L SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature

BFN21

Contextual Info: SIEMENS PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 20 NPN

MOC2051

Abstract: MOC205 MOC205-207 MOC206 MOC207 DIODE RL 207 optocoupler 207 F 207 diode 207 optocoupler
Contextual Info: MOC205-207 Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The MOC series consists of a gallium arsenid infraredemitting diode, optically coupled to a silicon NPN epitaxial planar transistor in an 8-lead SOIC package

TCMT1023

Abstract: TCMT1024 TCMT1020 tcmt1024 temic TCMT1023-GS12 11755 12085 tcmt1022 TCMT1021
Contextual Info: TCMT1020 Series Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The TCMT1020 series consists of a gallium arsenid infrared-emitting diode, optically coupled to a silicon NPN epitaxial planar transistor in an 8-lead SOIC

Contextual Info: DATA SHEET NEC Compound Field Effect Power Transistor _j PA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The ¿¡PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, m otor and lamp driver.

transistor 1094

Abstract: NPN SMALL SIGNAL TRANSISTOR 182LA TRANSISTOR BC 413 BC182LA bc182* transistor ic 4450
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LA SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

182LB

Abstract: BC182LB TRANSISTOR BC 413 transistor 1094
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LB SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

ld 1088 bs

Abstract: k 1094 transistor 1/ld 1088 bs
Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage

256K DPRAM

Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate
Contextual Info: CB45000 SERIES  HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

tristate nand gate

Abstract: HCMOS6
Contextual Info: CB45000 SERIES  HCMOS6 STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors