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    TRANSISTOR 114 Search Results

    TRANSISTOR 114 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 114 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2

    CA3046 bjt

    Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


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    PDF CA3046, CA3086, CA3127 MM9701 CA3086 100mV CA3046 bjt CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 Harris CA3086 CA3046 NPN 0138E

    2SC5436

    Abstract: 2SC5800 uPA863TD-Q2
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


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    PDF PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2

    NEC 2533

    Abstract: transistor c 6093 NEC k 787 2SC4568 2533 nec
    Text: DATA SHEET SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV rceiver.


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    PDF 2SC4568 2SC4568 NEC 2533 transistor c 6093 NEC k 787 2533 nec

    2SC5005

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    PDF 2SC5005 2SC5005

    transistor c 6093

    Abstract: NEC 2533 3059 npn transistor t72 marking 2SC4568 s-parameter s11 s12 s21 10000 IC Marking 812
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4568 NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV receiver.


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    PDF 2SC4568 2SC4568 SC-59 transistor c 6093 NEC 2533 3059 npn transistor t72 marking s-parameter s11 s12 s21 10000 IC Marking 812

    2SC5736

    Abstract: 2SC5737 5609 npn transistor marking 2M
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor


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    PDF PA851TC 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 2SC5736 2SC5737 5609 npn transistor marking 2M

    2SC5435

    Abstract: 2SC5437 NEC 2505 nj
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor


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    PDF PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj

    2SC5435

    Abstract: 2SC5786 NEC 7815
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor


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    PDF PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815

    2SC5436

    Abstract: 2SC5786 4550 nec IC 7432 data
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor


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    PDF PA861TC 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786 4550 nec IC 7432 data

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    PDF 2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607

    ZO 103 MA 75 623

    Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
    Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 ZO 103 MA 75 623 ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452

    NEC JAPAN 282 110 01

    Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2

    2SC5603

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


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    PDF PA893TD S21e2 2SC5603) 2SC5603 PA893TD-T3 2SC5603

    AN 7591 POWER AMPLIFIER

    Abstract: ic an 7591 marking R33 transistor NEC D 587 2SC3583 AN 7591 2SC3583 R35 MARKING 6260
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide


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    PDF 2SC3583 2SC3583 AN 7591 POWER AMPLIFIER ic an 7591 marking R33 transistor NEC D 587 AN 7591 2SC3583 R35 MARKING 6260

    2SC5436

    Abstract: 2SC5600 NEC 821
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


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    PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821

    2SC5736

    Abstract: 2SC5737 marking VH
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


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    PDF PA851TD 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 PA851TD-T3 2SC5736 2SC5737 marking VH

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


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    PDF 2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399

    5E25

    Abstract: 2SC5600
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


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    PDF PA891TC S21e2 2SC5600) 2SC5600 PA891TC-T1 5E25 2SC5600

    8205 6-pin

    Abstract: 2SC5435 2SC5786
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


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    PDF PA860TD 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 8205 6-pin 2SC5435 2SC5786

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter


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    PDF DTA114YE OT-416/SC-90 b3b7255 b3b72S5

    nec 817

    Abstract: MARKING TRANSISTOR T44 PT4250 2SC3545
    Text: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillator and mixer in a tuner of a TV receiver.


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    PDF 2SC3545 2SC3545 nec 817 MARKING TRANSISTOR T44 PT4250

    IC SEM 2105

    Abstract: 3771 nec
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 IC SEM 2105 3771 nec