TRANSISTOR 12 GHZ Search Results

Radar

Abstract: PH1214-12M radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended

TRANSISTOR GENERAL DIGITAL L6

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

BFG35

Abstract: TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

BFG198

Abstract: microstripline
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended

transistor DATA REFERENCE handbook

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a

BFG35

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

55LT

Contextual Info: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

MBB754

Abstract: BFG198 npn 2222 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

20191

Contextual Info: ERICSSON $ PTB 20191 12 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20191 is a class AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated at 12 Watts minimum output power (CW) or 15 Watts output power (PEP).

20191 ic

Contextual Info: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

NEL130681-12

Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and

pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

BFG16A

Abstract: CTS100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES

MBB284

Abstract: BFG35 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION

transistor DATA REFERENCE handbook

Abstract: BFG16A philips transistor handbook transistor bfg16a
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES

bfg97

Abstract: BFG31
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES

Contextual Info: ERICSSON í PTB 20191 12 Watts, 1 . 7 8 - 1 . 9 2 GHz RF P o wer Transistor Description The 20191 is a class AB, N PN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

NEL130681-12

Abstract: J425 NEL1306 NEL1300 2SC3542
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL13208I-12 FEATURES DESCRIPTION • HIGH LINEAR POWER AND GAIN: NEL1306: PidB = 38 dBm, GidB - 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB - 6 dB TYP NEC's NEL1300 series of NPN epitaxial microwave power

Contextual Info: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to