TRANSISTOR 1765 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor

c3600

Abstract: 2SC3600 2SA1406 1765A 2SA406
Contextual Info: O rd e rin g n u m b e r : EN 1765 A 2SA1406/2SC3600 N0.1765A PNP/NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Ultrahigh-definition CRT display. . Video dutput. . Color TV chroma output.

Contextual Info: Ordering number: EN 3181A _ 2SA1765 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Fast switching speed - Low collector saturation voltage • High gain-bandwidth product • Small collector capacitance

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8426
Contextual Info: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

SD6000

Abstract: NDS8426
Contextual Info: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

TRANSISTOR D 1765

Abstract: C3600 2SC600 2SA1406 2SA140
Contextual Info: Ordering number: EN 1765A 2SA1406/2SC3600 Silicon PNP/NPN Epitaxial Planar Transistor Ve r y Hi g h -De f i n i t io n CRT D i s p l a y V id e o Ou t p u t Ap p l i c a t i o n s Applications . Very high-definition CRT display. . Video output. . Color TV chroma output.

NDS8426

Contextual Info: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

1A98

Abstract: NDS8426 ISS 99 diode
Contextual Info: N July 1996 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

Contextual Info: July 1996 N NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

Contextual Info: h 7 > y X $ / T ransistors 2SD 1765 2SD1765 I fcf £ V NPN F> h 7 > V X ^ Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • — r liill/D im e n s io n s U n it: mm 1) V y n - z m - KrtBEo 2) ' K - ' X • 1 5 v SfSjlcJStStrtjKo 3) 7 < > H - A K 7 S o T l ' 5 / c

2SD1960

Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
Contextual Info: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.

CEF09N7G

Abstract: cef09n7 CEP09N7 CEB09 ceb09n7g
Contextual Info: CEP09N7G/CEB09N7G CEF09N7G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES VDSS RDS ON CEP09N7G Type 700V 1Ω 9A ID @VGS 10V CEB09N7G 700V 1Ω 9A 10V CEF09N7G 700V 1Ω 9A d 10V D Super high dense cell design for extremely low RDS(ON).

3904

Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
Contextual Info: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

Contextual Info: September 1997 F A I R C H I L D SEM ICONDUCTO R tm NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 9.9 A, 20 V. Rds^n, = 0.015 & @ VGS= 4.5 V. transistors are produced using Fairchild's proprietary, high cell

IPLU300N04S4-R7

Abstract: 4N04R7
Contextual Info: IPLU300N04S4-R7 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on 0.76 mW ID 300 A Features • N-channel - Enhancement mode H-PSOF-8-1 Tab • AEC qualified • MSL1 up to 260°C peak reflow 8 1 • 175°C operating temperature Tab • Green product (RoHS compliant); 100% lead free

Contextual Info: IPLU300N04S4-R8 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on 0.77 mW ID 300 A Features H-PSOF-8-1 • N-channel - Enhancement mode Tab • AEC qualified 8 • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green product (RoHS compliant); 100% lead free

LD 1106 BS

Abstract: NDS8426
Contextual Info: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.

2SA911

Abstract: 2sc1751 2SA861 2SA1033 138D 2N6426 MPSA43 MP6A42 2sa872 transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

NDS8426

Contextual Info: July 1 9 9 6 N N D S8426 Single N-Channel Enhancement M ode Field Effect Transistor G eneral D escription Features T h ese N -C h an n el en h a n ce m e n t m o d e p o w er field effect transistors are p rod u ced u sin g N ational's proprietary, high cell d en sity, DMOS tech n o lo g y .

transistor 2SB 1567

Abstract: 2sd 316
Contextual Info: 2S B 1 5 8 0 / 2 S B 1 316 / 2 S B 1 5 6 7 / 2 S B 1 287 Transistors 2 S D 2 1 95 / 2S D 1 9 8 0 / 2 S D 1 8 6 7 / 2S D 2 3 9 8 / 2 S D 1 765 Power Transistor —100V, — 2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=25"C)

HC2000H

Abstract: RCA HC2000H RCA-HC2000H AN-4483 HC2000 2000 PWM hybrid AN4483 SOLID STATE AUDIO AMPLIFIERS RCA Solid State Power Transistor RCA Solid State amplifier
Contextual Info: G E SO LI D 3875081 ST AT E Dl D E I 3Ö7S0Ö1 G E S O L I D ST AT E Pow er Hybrid C irc u its _ ' .HC2000H DG17t.SE 3 01E 17652 D ~7^7?-JF3 File Number 566 Multi-Purpose 7-Ampere . Operational Amplifier Linear Amplifiers for Applications in Industrial

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)