TRANSISTOR 1820 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

IN5817 schottky diode symbol

Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small

B1219

Abstract: AN 6752
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification 2PD1820A NPN general purpose transistor

1219a

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2PB1219A PNP general purpose transistor Product specification Supersedes data of 1997 Mar 25 Philips Sem iconductors 1999 Apr 12 PHILIPS PHILIPS Philips Semiconductors Product specification 2PB1219A PNP general purpose transistor

SS TRANSISTOR

Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

SC6210

Abstract: Sc-6210 PBSS4350X PBSS5350X PBSS5350
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor

s43 npn transistor

Abstract: mle180 S43 sot89 PBSS4350x PBSS5350X transistor s43 SOT89 S43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor PBSS4350X FEATURES QUICK REFERENCE DATA

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

SOT89 S43

Abstract: S43 sot89 PBSS4350X PBSS5350X marking S43 mle180
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A NPN low VCEsat (BISS) transistor

transistor j307

Abstract: j352 sk063
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to

C5750X7S2A106M

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

NI-880XS-2

Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD
Contextual Info: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

c5750x7s2a106m

Abstract: AD255A mosfet mttf aft20p06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

AFT18S230S

Abstract: MXC 037 ATC100B1R2BT AFT18S230SR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 0, 8/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

Contextual Info: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

mosfet mttf

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT18S230SR3 This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.