TRANSISTOR 1967 Search Results

TRANSISTOR 1967 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1967 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
power Junction FET advantages and disadvantages Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor	Original	PDF	ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
GE Transistor Manual Abstract: transistor k 316 35820 transistor circuit design Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing	Original	PDF	5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design
GE Transistor Manual Abstract: cutler 35860 5988-0424EN transistor circuit transistor circuit design TRANSISTOR hFE-100 Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing bandwidth and noise figure, while	Original	PDF	5988-0424EN GE Transistor Manual cutler 35860 transistor circuit transistor circuit design TRANSISTOR hFE-100
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Application Notes Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit Text: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the	Original	PDF
high power FET transistor s-parameters Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
GaAs FET operating junction temperature Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2 Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .	Original	PDF	ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2
specification transistor Abstract: Transistor 1967 Text: MI L-S- 19500/139B AMENDMENT-1 16 Au.gw 1967 MILITARY SPECIFICATION TRANSISTOR, TYW Page 4, Table 1, Subgraup MIL-STD-7512 “TA 6 Details = PNP, JAN-2 SILICON Nll19 Forward-Current column add Transfer the Ratio following In the ‘550c””” Preparing	Original	PDF	19500/139B MIL-STD-7512) Nll19 specification transistor Transistor 1967
a1270* transistor Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141 Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2	Original	PDF	R123-R181, 5091-6489E 5968-1410E a1270* transistor computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
a1270* transistor Abstract: 1689c hp plotter Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2	Original	PDF	5091-6489E 5968-1410E a1270* transistor 1689c hp plotter
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
TTL integrated circuit Dual J-K Master Slave Flip flop Abstract: Fairchild 9002 DTL Fairchild 930 JK flipflop 9001 micrologic* master slave ami 9002 ttul Logic 9001 fairchild micrologic dtl rs flip flop ScansUX979 Text: MARCH 1967 • FAIRCHILD TR A N SIST O R -T R A N SIST O R G E N E R A L D E S C R IP T IO N MICROLOGIC The Fairchild Transistor-Transistor M icrologic* Integrated Circuit fam ily TT/iL com b ines a high fanout, high noise immunity, low power dissipation and good capacitive load driving	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: • bb53^31 0 02S c17b MMfl H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E » SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope primarily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA	OCR Scan	PDF	PXT3906 OT-89 7Z74969

IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
transistor p2a Abstract: PXT3906 transistor marking CS philips 1967 Text: •I bbSB^Bl □D2Stì7b 4MÛ H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E T> SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope prim arily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE D A T A	OCR Scan	PDF	2Sc17b PXT3906 OT-89 OT-89. 7Z74972 transistor p2a PXT3906 transistor marking CS philips 1967
eRVDS Abstract: 2SK797 OS1012 Text: "t û DÊJb427S2S 6427525 N E C 0Dlflci4S ELECTRONICS fl 98D INC 18942 D T 3e N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D E S C R IP TIO N The 2SK797 Is N-Channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.	OCR Scan	PDF	Jb457S5S 2SK797 eRVDS OS1012
2SK798 Abstract: M27555 Text: 98D „ c r F I E C T R O N IC S 18945 IN C N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^fl sgggì - D E \| m 2 7 S 2 5 GDlflci4S 3 l'es 2 DESCRIPTION The 2SK798 is N-Channel MOS Field Effect Power Transistor K 7 9 8 PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.	OCR Scan	PDF	2SK798 T-39-13 M27555
2N1195 Abstract: Germanium power Text: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:	OCR Scan	PDF	2N1195 MIL-S-19500/71D, 2N1195 Germanium power
2SK798 Abstract: No abstract text available Text: „ r r E . F C T R O N IC S 98D IN C 1 8 9 4 5 D X '~ $ e} - ' 3 ' _ V- i t ' ~ - ,7' ~V r B M M iT liifir fT N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR g s r-; Tfl DESCRIPTION FEATURES DËJ m27S25 GD lfl ci4S i*at 2SK798 The 2SK798 is N-Channel MOS Field Effect Power Transistor	OCR Scan	PDF	b427S2S 2SK798 0000F
2N1120 Abstract: I960 Text: MIL-S-19500/68 A AMjsNimüNt 1 16 February 1967 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE; TRANSISTOR, FNF, GERMANIUM, SWITCHING This amendment forms a part of Military Speci fication MiL-S-i9500/bBA/ 3 May 196 b, and is mandatory for use by all Departments and	OCR Scan	PDF	MIL-S-19500/63A 2N1120 MIL-S-19500/Ã 596I-OOO9-3I) 596I6I-OOO9-3I) 2N1120 I960
2N914 Abstract: 307G marking YJ transistors Text: MIL-S-19500/373A 10 August 1972 dUi'X.ROC.UU'iU M IL-S-19500/373 USAF 31 May 1967 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR. NPN. SILICON, SWITCHING TYPES 2N914 AND TX2N914 This specification Is approved for use by all D epart ments and Agencies of the Departm ent of Defense.	OCR Scan	PDF	MIL-S-19500/373A MIL-S-19500/373 2N914 TX2N914 307G marking YJ transistors
Krypton-85 Abstract: 2N1484 2N1486 2N1483 2N1485 2N1485 JANTX transistor 2n1485 Text: M IL -S -1 9 5 0 0 /180D 9 O ctober 1967_ SUPERSEDING M IL -S -1 9 5 0 0 /180C EL 12 D ecem b er 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, MEDIUM-POWER TY PE S 2N1483, TX2N1483, 2N1484, TX2N1484 2N1485, TX2N1485, 2N1486, TX2N1486	OCR Scan	PDF	MIL-S-19500/180D MIL-S-19500/180C 2N1483, TX2N1483, 2N1484, TX2N1484 2N1485, TX2N1485, 2N1486, TX2N1486 Krypton-85 2N1484 2N1486 2N1483 2N1485 2N1485 JANTX transistor 2n1485

TRANSISTOR 1967 Search Results

TRANSISTOR 1967 Result Highlights (5)

TRANSISTOR 1967 Datasheets Context Search

power Junction FET advantages and disadvantages

GE Transistor Manual

GE Transistor Manual

transistor s11 s12 s21 s22

RF transistors with s-parameters

Application Notes

high power FET transistor s-parameters

GaAs FET operating junction temperature

specification transistor

a1270* transistor

a1270* transistor

2sb504

TTL integrated circuit Dual J-K Master Slave Flip flop

Untitled

IC HXJ 2038

1N6227

transistor p2a

eRVDS

2SK798

2N1195

2SK798

2N1120

2N914

Krypton-85