germanium transistors PNP

Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

BLY90

Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
Contextual Info: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­ dent, eliminating interference.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: • 0025^82 741 ■ APX N AMER PHILIPS/DISCRETE PXT4403 L7E » yv SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for linear switching applications. The complementary type is PXT4401.

C5750X7S2A106KT

Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

philips 3595

Abstract: BLX69 BLX69A 60306 cm 3593
Contextual Info: 86D 0 1790 D T i N AMER P H I L I P S / D I S C R E T E ObE D • BLX69A bbSBTBl 0014028 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is

BLX69A

Abstract: BLX69 7Z66 TRANSISTOR D 1978
Contextual Info: PH I L IP S I N T E R N A T I O N A L MAINTENANCE TYPE 41E D • 711002b, D0E7Ö1S 1 I PHIN BLX69A r - 3 3 - n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and Is

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

dlc10

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a
Contextual Info: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter HF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

ericsson 20151

Abstract: 9434 1198E bav 17 diode
Contextual Info: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

828 TRANSISTOR equivalent

Contextual Info: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

Contextual Info: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

2SA1964

Abstract: 2SC5248 SC-75A T0220FP VCEO160V
Contextual Info: 2SA1964 2SC5248 Transistors High-voltage Switching Audio output amplifier transistor, Stabilized power supply transistor 2SA1964 •Feature« •A b s o lu te maximum ratings ( T a = 2 5 t ) 1 ) R at DC current gain characteristics. 2 ) High breakdown voltage. {B V ce o » *— 1 6 0 V )

Johanson Piston Trimmer

Abstract: G200 RF TRANSISTOR 2GHZ
Contextual Info: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a

lc 945 p transistor NPN TO 92

Contextual Info: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

Contextual Info: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

c38 transistor

Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
Contextual Info: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for

R2C TRANSISTOR

Contextual Info: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a