TRANSISTOR 2 A SOT23 Search Results

BFT25

Abstract: MSB003 MEA909
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23

BFT25

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

BFT25

Abstract: MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

6aa marking

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

MMBTA05

Contextual Info: MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor  A L FEATURES 3 3 Driver Transistor  1 1 2 K E 2 D MARKING

Contextual Info: SO T 23 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 3G

Contextual Info: SO T2 3 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.

MMBTA13

Contextual Info: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE

MMBTA13

Contextual Info: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

3D marking sot23

Abstract: PBSS4230T PBSS5230T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat BISS transistor Product specification 2003 Sep 29 Philips Semiconductors Product specification 30 V, 2 A NPN low VCEsat (BISS) transistor PBSS4230T QUICK REFERENCE DATA FEATURES

marking code 10 sot23

Abstract: PNP POWER TRANSISTOR SOT23 PBSS5230T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor PBSS5230T FEATURES QUICK REFERENCE DATA

PBSS5250T

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T QUICK REFERENCE DATA FEATURES

E2p 96 transistor

Abstract: BFS17 BFS17A MSB003
Contextual Info: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

sot23 transistor marking ZF

Abstract: PBSS4240T PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2001 Oct 31 2004 Jan 15 Philips Semiconductors Product specification 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T QUICK REFERENCE DATA

PBSS4240T

Abstract: PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2001 Jul 13 2004 Jan 09 Philips Semiconductors Product specification 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T QUICK REFERENCE DATA

smd code marking HD SOT23

Contextual Info: SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat BISS transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits

Contextual Info: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film

E2p 28 transistor

Abstract: E2p transistor transistor applications
Contextual Info: Short-form product specification Philips Semiconductors NPN 3 GHz wideband transistor BFS17A PINNING APPLICATIONS • It is intended for a wide range of RF applications such as TV-tuners. PIN DESCRIPTION DESCRIPTION 1 base 2 emitter 3 collector NPN transistor in a plastic SOT23

PBSS4240T

Abstract: PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Jul 13 2004 Jan 09 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T FEATURES QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DAT PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA

sot23 transistor marking ZF

Abstract: PBSS4240T PBSS5240T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA