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    TRANSISTOR 20N60 Search Results

    TRANSISTOR 20N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 20N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan     		O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 PDF

    20N60D

    Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 20N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7


    OCR Scan     		MGW20N60D/D 20N60D PDF

    SPW20N60S5

    Abstract: 20N60S5
    Contextual Info: SPW20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 PDF

    20N60S5

    Contextual Info: SIEMENS SPW20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5 PDF

    20n60c2

    Abstract: SPW20N60C2 SDP06S60
    Contextual Info: SPW20N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated


    Original     		SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20n60c2 SPW20N60C2 SDP06S60 PDF

    20n60s5

    Abstract: SPP20N60S5 4252 spp20n60 Q67040-S4751 SPB20N60S5
    Contextual Info: SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 220 · Ultra low gate charge · Improved periodic avalanche rating · Extreme dv/dt rated · Optimized capacitances


    Original     		SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 P-TO220-3-1 20N60S5 Q67040-S4751 P-TO263-3-2 SPP20N60S5 20n60s5 4252 spp20n60 Q67040-S4751 SPB20N60S5 PDF

    D8172

    Abstract: 20n60cfd 20n60cf D207 F 207 diode
    Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 W ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD D8172 20n60cfd 20n60cf D207 F 207 diode PDF

    20N60C3

    Abstract: SPB20N60C3 diode marking G36
    Contextual Info: SPP20N60C3 SPB20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPP20N60C3 SPB20N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4398 Q67040-S4397 20N60C3 SPB20N60C3 diode marking G36 PDF

    Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 9 ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD PDF

    20n60c3

    Abstract: 20N60C3 equivalent spp20n60c3 TRANSISTOR SMD MARKING CODE SPB20N60C3 spp20n60 TRANSISTOR SMD MARKING CODE 7A SDP06S60 Q67040-S4397 smd 20n60c3
    Contextual Info: SPP20N60C3 SPB20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPP20N60C3 SPB20N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4398 20N60C3 20n60c3 20N60C3 equivalent spp20n60c3 TRANSISTOR SMD MARKING CODE SPB20N60C3 spp20n60 TRANSISTOR SMD MARKING CODE 7A SDP06S60 Q67040-S4397 smd 20n60c3 PDF

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Contextual Info: SPW20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original     		SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60 PDF

    20N60C3

    Abstract: 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3
    Contextual Info: SPA20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		SPA20N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4410 20N60C3 20N60C3 20N60C3 equivalent SPA20N60C3 s4410 AN-TO220-3-31-01 GPT09301 SDP06S60 transistor 20N60c3 PDF

    20n60cfd

    Abstract: d207 infineon TRANSISTOR D131 D131 transistor D207 F207 diode SPA20N60CFD
    Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω ID 8.3 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPA20N60CFD PG-TO220-3-31 SP000079613 20N60CFD 20n60cfd d207 infineon TRANSISTOR D131 D131 transistor D207 F207 diode SPA20N60CFD PDF

    20n60c3

    Abstract: SPA20N60C3 transistor 20N60c3 Q67040-S4410
    Contextual Info: SPA20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		SPA20N60C3 P-TO220-3-31 20N60C3 P-TO220-3-31 Q67040-S4410 20n60c3 SPA20N60C3 transistor 20N60c3 Q67040-S4410 PDF

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Contextual Info: SPW20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF

    20n60c2

    Abstract: AN-TO220-3-31-01 GPT09301 SDP06S60 SPA20N60C2
    Contextual Info: SPA20N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 FullPak • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω


    Original     		SPA20N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4333 20N60C2 20n60c2 AN-TO220-3-31-01 GPT09301 SDP06S60 SPA20N60C2 PDF

    20n60c3

    Abstract: spp20n60c3 SPB20N60C3
    Contextual Info: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		SPP20N60C3, SPB20N60C3 SPA20N60C3 SPP20N60C3 SPA20N60C3 P-TO220-3-1 P-TO263-3-2 P-TO220-3-31 20n60c3 PDF

    20n60c3

    Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
    Contextual Info: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60 PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
    Contextual Info: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances


    OCR Scan     		SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor n60s5 PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
    Contextual Info: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent
    Contextual Info: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V • Improved periodic avalanche rating RDS(on) 0.19


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent PDF

    DF 331 TRANSISTOR

    Abstract: d207
    Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 " I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD DF 331 TRANSISTOR d207 PDF

    20N60C3 equivalent

    Abstract: 20N60C3 SPW20N60C3 tp 2116 20n60c TO-247 SDP06S60
    Contextual Info: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 equivalent 20N60C3 SPW20N60C3 tp 2116 20n60c TO-247 SDP06S60 PDF

    20n60cfd

    Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
    Contextual Info: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF PDF