2SB974
Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308
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2SD1308
-100V,
2SB974
2SD1308
transistor 2A k
transistor 2A pnp
2SD130
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2SC5866
Abstract: 2SA20 2SA2094
Text: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)
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2SC5866
200mV
2SA2094
2SC5866
2SA20
2SA2094
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ZUMT720
Abstract: ZUMT619 DSA003732
Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)
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Super323TM
OT323
ZUMT619
500mW
ZUMT720
100ms
ZUMT720
ZUMT619
DSA003732
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MARKING fzt
Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 605 PART MARKING DETAIL FZT705 C E B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT705
100ms
FZT704
MARKING fzt
MARKING fzt 605
fzt 605
FZT704
FZT705
DSA003714
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FZT705
Abstract: MARKING fzt FZT704 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 604 PART MARKING DETAIL FZT704 C E B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT704
100ms
FZT705
FZT705
MARKING fzt
FZT704
DSA003714
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APL5330
Abstract: 27BSC APL5330KAE-TR APL5330KE-TR STD-020C TRANSISTOR HANDLING 2A step down Voltage Regulator sop8 2a
Text: APL5330 Dual Input 2A Low Dropout Regulator Features General Description • • The APL5330 integrates a power transistor to provide Fast Transient Response regulated voltage with maximum output current of 2A. High Output Accuracy It also incorporates current-limit, thermal shutdown and
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APL5330
APL5330
27BSC
APL5330KAE-TR
APL5330KE-TR
STD-020C
TRANSISTOR HANDLING 2A
step down Voltage Regulator sop8 2a
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C5875
Abstract: 2SA2087 2SC5875
Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and
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2SC5875
200mV
2SA2087
65Max.
C5875
C5875
2SA2087
2SC5875
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transistor
Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Text: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.
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2SB1188
2SB1182
2SB1240
2SB822
2SB1277
2SB911M
2SD1766
2SD1758
2SD1862
2SD1189F
transistor
SD1227
transistor 2SB1240
silicon pnp transistor
transistor 2A
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2SD1758
Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
Text: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M
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2SD1766
2SD1758
2SD1862
2SD1055
2SD1919
2SD1227M
2SB1188
2SB1182
2SB1240
2SB891F
96-217-B24
transistor 257
2SD1227M
2SB911
transistor 2SD1862
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pnp npn dual emitter connected
Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded
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ZXTD4591AM832
D-81541
pnp npn dual emitter connected
ZETEX complementary transistor PRODUCT LINE
design ideas
MARKING 91A NPN
MARKING 91A NPN transistor
Surface mount NPN/PNP complementary transistor
MLP832
TS16949
ZXTD4591AM832
ZXTD4591AM832TA
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MLP832
Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,
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ZXTD4591AM832
MLP832
ZXTD4591AM832
ZXTD4591AM832TA
ZXTD4591AM832TC
marking 91a
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2SA1773
Abstract: 2SC4616 300V transistor npn 2a
Text: 2SA1773 / 2SC4616 Ordering number : EN3399D SANYO Semiconductors DATA SHEET 2SA1773 / 2SC4616 2SA1773 : PNP Epitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • Large current capacity IC=2A .
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2SA1773
2SC4616
EN3399D
2SA1773
VCEO400V)
2SC4616
300V transistor npn 2a
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).
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ENN3512B
2SA1786
2SC4646
2SA1786/2SC4646
2SA1786/2SC4646]
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2SA1786
Abstract: 2SC4646 35123 2SC4646E
Text: Ordering number:EN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).
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EN3512B
2SA1786
2SC4646
2SA1786/2SC4646
VCEO400V)
2SA1786/2SC4646]
2SA1786
2SC4646
35123
2SC4646E
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Untitled
Abstract: No abstract text available
Text: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a
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CM2593
CM2593
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Untitled
Abstract: No abstract text available
Text: HT7465 2A Step-Down DC to DC Converter Feature General Description • Input voltage range: 4.75V to 24V The HT7465 is a 2A high eficiency step-down DCDC converter which includes a fully integrated MOS power transistor. The device uses a current-mode control operating methodology and can operate over a
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HT7465
HT7465
380kHz
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR HQ1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as ICs, motors, and solenoids available • On-chip bias resistor
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Untitled
Abstract: No abstract text available
Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)
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2SA2094
2SC5866
SC-96)
R1102A
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l05a
Abstract: 6k SOT223 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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OT223
FZT605
FZT705
-100mA
-10mA*
-100hA
-120V
FZT705
FZT704
55-c\
l05a
6k SOT223
marking FZT705
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)
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3512B
2SA1786/2SC4646
2SA1786
2SC4646
2SA1786
12894TH
AX-8287/4231MH
5180TA
X-6912
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NES6294Z
Abstract: No abstract text available
Text: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6294Z
NES6294Z
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transistor on 4409
Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Text: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).
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EN4409
2SA1830/2SC4734
2SA1830
2SC4734
2SA1830/2SC4734
transistor on 4409
on 4409
5SA18
2SC473
2SC4734
transistor t5c
2SA1830
5sa1
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NSG2555
Abstract: TRANSISTOR T4
Text: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors
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NSG2555
NSG2555
TRANSISTOR T4
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U2T405
Abstract: t605 U2T305
Text: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A
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U2T301
U2T305
U2T401
U2T405
U2T305
U2T301
U2T401
U2T405
t605
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