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    TRANSISTOR 2A K Search Results

    TRANSISTOR 2A K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2A K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor


    Original     		PDF 2SD1766-dies

    Untitled

    Abstract: No abstract text available
    Text: MP6X2 Transistors Medium Power Transistor 32V, 2A MP6X2 zDimensions (Unit : mm) zApplication Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. zStructure NPN silicon epitaxial planar transistor


    Original     		PDF 2SD1766-dies

    2SB974

    Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308


    Original     		PDF 2SD1308 -100V, 2SB974 2SD1308 transistor 2A k transistor 2A pnp 2SD130

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original     		PDF ZXTC4591AMC ZXTD4591AM832 D-81541

    Untitled

    Abstract: No abstract text available
    Text: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a


    Original     		PDF CM2593 CM2593

    2SA2093

    Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
    Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5880 200mV 100mA) 2SA2093 C5880 2SA2093 2SC5880 c5880 60V transistor npn 2a switching applications

    Untitled

    Abstract: No abstract text available
    Text: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a


    Original     		PDF CM2593 CM2593

    2DB1188P

    Abstract: P23Q
    Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.


    Original     		PDF 2DB1188P/Q/R 800mV 2DD1766 AEC-Q101 J-STD-020 MIL-STD-202, DS31144 2DB1188P P23Q

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


    Original     		PDF 2SD1766-die 2SB1188-die

    Untitled

    Abstract: No abstract text available
    Text: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC /IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)


    Original     		PDF 2SD1766-die 2SB1188-die

    APL5330

    Abstract: 27BSC APL5330KAE-TR APL5330KE-TR STD-020C TRANSISTOR HANDLING 2A step down Voltage Regulator sop8 2a
    Text: APL5330 Dual Input 2A Low Dropout Regulator Features General Description • • The APL5330 integrates a power transistor to provide Fast Transient Response regulated voltage with maximum output current of 2A. High Output Accuracy It also incorporates current-limit, thermal shutdown and


    Original     		PDF APL5330 APL5330 27BSC APL5330KAE-TR APL5330KE-TR STD-020C TRANSISTOR HANDLING 2A step down Voltage Regulator sop8 2a

    24v 2A regulator

    Abstract: 5 lead TO-263 1N5824 SM8312 12v to 3.7v converter 2a
    Text: SM8312 SAMHOP Microelectronics Corp. 150KHz, 2A PWM Buck Switching Regulator General Description The SM8312 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring


    Original     		PDF SM8312 150KHz, SM8312 O263-5L 24v 2A regulator 5 lead TO-263 1N5824 12v to 3.7v converter 2a

    ZETEX complementary transistor PRODUCT LINE

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A


    Original     		PDF ZXTC4591AMC ZXTD4591AM832 D-81541 ZETEX complementary transistor PRODUCT LINE

    transistor 2A k

    Abstract: 2SB1430 PNP 100V 2A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA)


    Original     		PDF -100V -100V; transistor 2A k 2SB1430 PNP 100V 2A

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23

    pnp npn dual emitter connected

    Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded


    Original     		PDF ZXTD4591AM832 D-81541 pnp npn dual emitter connected ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA

    MLP832

    Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTD4591AM832 MLP832 ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222

    marking sop-12

    Abstract: 2N2222 TRANSISTOR TOSHIBA
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


    Original     		PDF TC120 600mA 300kHz TC120 combinatio778-366 DS21365C-page marking sop-12 2N2222 TRANSISTOR TOSHIBA

    on 4409

    Abstract: EN4409 transistor on 4409 2SA1830 2SC4734
    Text: Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original     		PDF EN4409 2SA1830 2SC4734 2SA1830/2SC4734 VCEO400V) 2SA1830/2SC4734 2SA1830/2SC4734] on 4409 EN4409 transistor on 4409 2SA1830 2SC4734

    OP7100

    Abstract: on 4409 ENN4409 transistor on 4409 2SA1830 2SC4734
    Text: Ordering number:ENN4409 2SA1830 : PNP Epitaxial Planar Silicon Transistor 2SC4734 : NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original     		PDF ENN4409 2SA1830 2SC4734 2SA1830/2SC4734 VCEO400V) 2SA1830/2SC4734 2084B 2SA1830/2SC4734] OP7100 on 4409 ENN4409 transistor on 4409 2SA1830 2SC4734

    OP7100

    Abstract: transistor on 4409 2SA1830 2SC4734
    Text: Ordering number:ENN4409 2SA1830 : PNP Epitaxial Planar Silicon Transistor 2SC4734 : NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


    Original     		PDF ENN4409 2SA1830 2SC4734 2SA1830/2SC4734 VCEO400V) 2SA1830/2SC4734 2084B 2SA1830/2SC4734] OP7100 transistor on 4409 2SA1830 2SC4734

    ZTX449

    Abstract: No abstract text available
    Text: PNP Silicon Planar Medium Power Transistor ZTX549 FEATURES • 1W power dissipation at Tsmb = 2 5 °C • 2A peak pulse current • Excellent gain characteristics up to 2A pulsed • Low saturation voltages • Fast switching • NPN complementary type available


    OCR Scan     		PDF ZTX549 ZTX449 300/is. ZTX449