TRANSISTOR 2A PNP Search Results

Marking Losa

Abstract: FZT705 marking FZT705
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 - FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT605 PART MARKING DETAIL - fc

l05a

Abstract: 6k SOT223 marking FZT705
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER

2SB974

Abstract: 2SD1308 transistor 2A k transistor 2A pnp 2SD130
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308

transistor marking 2A H

Abstract: MARKING fzt transistor 3229 transistor C 3229
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE PART MARKING DETAIL - FZT604 FZT/04 ABSOLUTE MAXIMUM RATINGS.

transistor 2A pnp

Abstract: 2SB880 2SD1190 transistor 2A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A

marking FZT705

Contextual Info: Not Recommended for New Design Please Use FZT705 SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 604

2SB855

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB855 DESCRIPTION •Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE sat = -1.2V(Max)@IC= -2A ·High Collector Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications.

Contextual Info: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A

MARKING fzt

Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 605 PART MARKING DETAIL – FZT705 C E B ABSOLUTE MAXIMUM RATINGS.

FZT705

Abstract: MARKING fzt FZT704 DSA003714
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 604 PART MARKING DETAIL – FZT704 C E B ABSOLUTE MAXIMUM RATINGS.

2DB1188P

Abstract: P23Q
Contextual Info: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE – FZT 605 PART MARKING DETAIL – FZT705 C E C B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

Contextual Info: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

ZETEX complementary transistor PRODUCT LINE

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)

Contextual Info: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)

transistor 2A k

Abstract: 2SB1430 PNP 100V 2A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA)

pnp npn dual emitter connected

Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded

MLP832

Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

on 4409

Abstract: EN4409 transistor on 4409 2SA1830 2SC4734
Contextual Info: Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

OP7100

Abstract: on 4409 ENN4409 transistor on 4409 2SA1830 2SC4734
Contextual Info: Ordering number:ENN4409 2SA1830 : PNP Epitaxial Planar Silicon Transistor 2SC4734 : NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).