TRANSISTOR 2SB1184 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2SD1760

Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SB1243

Abstract: 2SB1184 transistor 2SB1243 2SD1760 2SD1864 gd244
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor -60V, -3A 2SB1184/2SB1243 •Features •External dimensions (Units: mm) 1) LOW VcE(sat). VcEfsai) = -0.5V (Typ.) (Ic /Ib = -2A/-0.2A) 2) Complements the 2SD1760 /2SD1864. •Structure Epitaxial planar type

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1

2SB1185

Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure

2SB1184 SC-63

Abstract: 2SB1184 2SB1243 2SD1760 2SD1864
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter

2SB1243

Abstract: 2SB1184 2SD1760 2SD1864
Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter

Contextual Info: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure

transistor 2sb1184

Abstract: 2SB1184 2SD1760 2SD1864
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1184 TO-251 TO-252-2 TRANSISTOR PNP FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 123 1. BASE

1 w NPN EPITAXIAL PLANAR TYPE

Abstract: 2SD1760 2SD1864
Contextual Info: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760/2SD1864 •Features •E xternal dimensions (Unite : mm) 1 ) LOW VcE(sal). 2SD1760 VcE(sai) = 0 .5 V (Typ.) 2SD1864 (I c/I b = 2 A / 0 . 2 A ) 2) Complements the 2SB1184 / 2SB1243. il •Structure

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR PNP TO-252 FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864
Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure

2SB1243

Abstract: 2SB1184 2SD1760 2SD1864
Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR NPN TO-252 FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

2SB1184

Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
Contextual Info: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure

Contextual Info: 2SB1184F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: B1184^Q, where ★ is hFE code and □ is lot number Dimensions (Units: mm) • low collector saturation voltage, typically VCE(Sat) = ~°-5 v f° r 6.5 ±0.2 Ò

Contextual Info: 2SD1760 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value

transistor 2sb1184

Abstract: 2SB1184
Contextual Info: Transistors SMD Type Power transistor 2SB1184 TO-252 Features 6.50 +0.2 5.30-0.2 Low VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15

2SD1762

Abstract: 230S d1760 D1864
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type

2SB1184

Abstract: 2SD1760
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SD1760 TO-251 TO-252-2 TRANSISTOR NPN FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1184

Abstract: 2SD1760
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SD1760 TO-251 TO-252-2 TRANSISTOR NPN FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)