2SB1185 Search Results

2SB1185

Abstract: 2SD1762
Contextual Info: JMnic Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications PINNING PIN DESCRIPTION

2SB1185

Abstract: 2SD1762 2sb118
Contextual Info: SavantIC Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APPLICATIONS ·For use in low frequency power amplifer applications PINNING

2SB1185

Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

2SB1185

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1185 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector Saturation Voltage z Complement to Type 2SD1762 2. COLLECTOR 3. EMITTER APPLICATIONS z For Use in Low Frequency Power Amplifier

Contextual Info: 2SB1185 Plastic-Encapsulate Transistors PNP Features TO-220 Power dissipation PCM: 2 W Tamb=25℃ Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER

2SD1762

Abstract: 2SB1185
Contextual Info: Inchange Semiconductor Product Specification 2SD1762 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SB1185 APPLICATIONS ・For low frequency power amplifier applications PINNING

2SB1185

Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re

d 1762

Contextual Info: h -7 > v X £ /Transistors 2SB1185 7 1 7 ' i s - i - M P N P y ' J ^ > b y > 2 S B 1 1 8 5 v X $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • v H ilS l/ D in ie n sio n s U n it: mm) 1 ) V cE (sat) V c E ( s a t ) = - 0 .5 V ( T y p . )

B1185

Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
Contextual Info: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.

2SD1762

Abstract: 230S d1760 D1864
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type

2SD1760

Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SB1185 TRANSISTOR PNP TO-220F FEATURES Low VCE(sat): VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) 1. BASE 2. COLLECTOR MAXIMUM RATINGS* Ta=25℃ unless otherwise noted Symbol

2SB1185

Contextual Info: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SB1185 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range

2sB1185

Contextual Info: / I ransistors h -7 O C D A Q 4 C 2SB1185 i k ^ ;i f y 7 i i ' 7 , l / - t ^ P N P '> U = i> h 7 > y ' 7 ^ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • £t-Jfi^Ji±[2|/Dimensions U n it: mm 1) VcE(sat) t f - 0 . 5 V ( T y p . lir 'f g v - 'o

2SB1185

Contextual Info: 2SB1185 2SB1185 TRANSISTOR PNP TO-220 FEATURES 1. BASE Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SB1185

Abstract: transistor 2sb1185 2SD1762
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762

2SD1762

Abstract: 2SB1185
Contextual Info: SavantIC Semiconductor Product Specification 2SD1762 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SB1185

Abstract: 2SD1762
Contextual Info: Inchange Semiconductor Product Specification 2SB1185 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1762 APPLICATIONS ・For use in low frequency power amplifer applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD1762 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat) z Complements the 2SB1185 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1761

Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188
Contextual Info: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215

b1185

Abstract: b1184 y206
Contextual Info: Transistors Power Transistor -6 0 V, - 3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) ►External dim ensions (Units: mm) LOW VcE(sat}. VcE(sat) = —0 .5 V (Typ.) (Ic / I b 2) = - 2 A /- 0 .2 A ) Com plem ents the 2 S D 1 7 6 0 / 2 S D 1 8 6 4 /2 S D 1 7 6 2 .

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)