TRANSISTOR 2SB1412 Search Results

TRANSISTOR 2SB1412 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 2SB1412 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
2SB1412 Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES Excellent DC current gain characteristics Low VCE SAT	Original	2SB1412 2SB1412 O-252 2SB1412L 2SB1412-TN3-F-R 2SB1412L-TN3-F-R QW-R209-021 2SB1412L-TN3-F-R 2SB1412-TN3-F-R	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)	Original	2SB1412 2SB1412 2SB1412L-x-TN3-T 2SB1412G-x-TN3-T 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R O-252 QW-R209-021	PDF
2SB1412 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)	Original	2SB1412 2SB1412 O-252 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R QW-R209-021	PDF
2SB1412 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES Excellent DC current gain characteristics Low VCE SAT VCE(SAT)= -0.35V (Typ)	Original	2SB1412 2SB1412 O-252 2SB1412L 2SB1412-x-TN3-R 2SB1412L-x-TN3-R QW-R209-021	PDF
2SB1412 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)	Original	2SB1412 2SB1412 O-252 2SB1412L-TN3-R 2SB1412G-TN3-R QW-R209-021	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB1412 PNP SILICON TRANSISTOR H I GH V OLT AGE SWI T CH I N G T RAN SI ST OR  DESCRI PT I ON The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT	Original	2SB1412 2SB1412 2SB1412L-x-TN3-T 2SB1412G-x-TN3-T 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R O-252 QW-R209-021	PDF
d204 transistor Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204 Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /	Original	2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) d204 transistor D204 2SD2166 2SB1436 transistors 96-229-D204	PDF
transistor Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP Contextual Info: Transistors Low Frequency Transistor 20V,5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	Original	2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor B204 hFE is transistor 2SD2166 2SB1436 data sheet transistor PNP	PDF
2SD2098 Abstract: D204 2SD2166 2SB1386 2SB1436 d204 transistor sit transistor 2SB1412 2SD2118 2SB1326 Contextual Info: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /	Original	2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) D204 2SD2166 2SB1436 d204 transistor sit transistor	PDF
2SB1412 Abstract: 2SB1386 2SB1326 transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204 2SD2097 Contextual Info: Transistors Low Frequency Transistor 20V,5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	Original	2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204	PDF
2SB1386 Abstract: 2SB1412 2SD2098 2SD2118 T100 catalog transistor Contextual Info: 2SB1386 / 2SB1412 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118.	Original	2SB1386 2SB1412 2SD2098 2SD2118. 2SB1386 SC-62 SC-63 2SB1412 2SD2118 T100 catalog transistor	PDF
2SD2118 Abstract: 2SB1412 Contextual Info: Low frequency transistor −20V,−5A 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. 2SB1412 zStructure Epitaxial planar type	Original	2SB1412 2SD2118. SC-63 R0039A 2SD2118 2SB1412	PDF

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value	Original	O-251/TO-252-2L 2SB1412 O-251 O-252-2L -500mA -100mA -50mA 30MHz	PDF
2SB1412 Abstract: 2SD2118 Contextual Info: Low VCE sat transistor (strobe flash) 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. 2SD2118 zStructure Epitaxial planar type	Original	2SD2118 2SB1412. SC-63 R0039A 2SB1412 2SD2118	PDF
2SB1412 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	O-251/TO-252-2L 2SB1412 O-251 O-252-2L -500mA -100mA -50mA 30MHz 2SB1412	PDF
2SB1386 Abstract: 2SB1412 2SD2098 2SD2118 T100 PW500 Contextual Info: 2SD2098 / 2SD2118 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412.	Original	2SD2098 2SD2118 2SB1386 2SB1412. 2SD2098 SC-62 SC-63 2SB1412 2SD2118 T100 PW500	PDF
2sb132 Abstract: 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100 Contextual Info: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2	Original	2SB1386 2SB1412 2SB1326 2SB1412 SC-62 SC-63 2sb132 2SB1326 2SD2097 2SD2098 2SD2118 T100	PDF
Contextual Info: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV	Original	2SB1386 2SB1412 2SB1326 2SD2098 2SD2118 2SD2097. 2SB1386	PDF
2SB1326 Abstract: 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100 Contextual Info: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV	Original	2SB1386 2SB1412 2SB1326 SC-63 65Max. SC-62 2SB1326 2SD2097 2SD2098 2SD2118 T100	PDF
2SB1412 Contextual Info: 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES D-Pack TO-252 Designed for general Low VCE(sat) CLASSIFICATION OF hFE Product-Rank 2SB1412-P	Original	2SB1412 O-252) 2SB1412-P 2SB1412-Q 2SB1412-R O-252 17-May-2013 -100mA -50mA, 30MHz 2SB1412	PDF
2SB1412 Abstract: 2SB1326 2SB1386 2SD2118 T100 DPACK2 Contextual Info: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage	Original	2SB1412 2SD2118 2SB1386 2SB132 2SB1412) 2SB1412 2SB1326 2SB1386 2SD2118 T100 DPACK2	PDF
Contextual Info: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage	Original	2SB1412 2SD2118 2SB1386 2SB1412)	PDF

TRANSISTOR 2SB1412 Search Results

TRANSISTOR 2SB1412 Result Highlights (5)

TRANSISTOR 2SB1412 Datasheets Context Search

MN1280

2SB1412

2SB1412

2SB1412

2SB1412

oz960

d204 transistor

transistor

2SD2098

2SB1412

2SB1386

2SD2118

2SB1412

2SB1412

2SB1386

2sb132

2SB1326

2SB1412

2SB1412