2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SA1534

Abstract: 2sa153 2SA1534A 2SC3940 2SC3940A
Contextual Info: Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Collector to

Contextual Info: Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Symbol Collector to 2SA1534

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 4.0±0.2 M Di ain sc te

2SC3940

Abstract: 2sc3940a 2SA1534 2SA1534A
Contextual Info: Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1534 and 2SA1534A Unit: mm 5.0±0.2 4.0±0.2 ● ● 8.0±0.2 • Features Low collector to emitter saturation voltage VCE sat .

2SB1221

Abstract: 2SC3941
Contextual Info: Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping. ■ Absolute Maximum Ratings

2SC3940

Abstract: 2SC394-0 2SC3940A 2SA1534 2SA1534A
Contextual Info: Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1534 and 2SA1534A Unit: mm 5.0±0.2 4.0±0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SB1221

Abstract: 2SC3941
Contextual Info: Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 4.0±0.2 ● ● 0.7±0.2 • Features 8.0±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SA1534

Abstract: 2SA1534A 2SC3940 2SC3940A
Contextual Info: Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1534 and 2SA1534A Unit: mm 5.0±0.2 4.0±0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SB1221

Abstract: 2SC3941
Contextual Info: Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 4.0±0.2 ● ● 0.7±0.2 • Features 8.0±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SB1221

Abstract: 2SC3941
Contextual Info: Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SB1221 Unit: mm 4.0±0.2 ● High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping.

2SA1534A

Abstract: 2SA1534 2SC3940 2SC3940A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A M Di ain sc te on na tin nc ue e/

2SA1534

Abstract: 2SC3940 2SA1534A 2SC3940A
Contextual Info: Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 5.0±0.2 4.0±0.2 Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion

2SC3941

Abstract: 2SB1221
Contextual Info: Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SB1221 Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features ● High collector to emitter voltage VCEO. High transition frequency fT.

2SA1534

Abstract: 2SA1534A 2SC3940 2SC3940A
Contextual Info: Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 5.0±0.2 4.0±0.2 Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion

A1534A

Abstract: 1534a 2SC3940 A1534
Contextual Info: Panasonic Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification U nit: mm C om ple m e ntary to 2 S A 1 534 and 2S A 1534A • Features • Low collector to emitter saturation voltage VCE -sat .

Contextual Info: Panasonic Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdow n voltage general am plification For sm all TV video output C om ple m e ntary to 2 S B 1 221 • Features • • • H igh collector to emitter voltage Vceo. H igh transition frequency fT.

TRANSISTOR BI 237

Abstract: 2as1c 2SC3949
Contextual Info: FUJITSU MICROELECTRONICS 31E D C2 3 7 4 ci?t,B OOlbbSO 3 EIFMI r-33-f3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2SC3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS P aram ete r S ym bol S torage T e m p e ra tu re Range

2SC3844

Abstract: 2SC3842 2SC3843 2SC3845 2SC3846 2SC3847 2SC3947 2SC3948
Contextual Info: FU JI TSU MICROELECTRONICS 31E D 37MT7b2 ÜQlbbilb 1 IF M I T Ja n u a ry 1990 Edition 1.1 — . FUJITSU P R O D U C T P R O F ILE - — - 2 2SC3948 Silicon High Speed Power Transistor 2SC3948 500V, 10A A B S O L U T E MAXIMUM R A TIN G S Parameter

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2SC3847

Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l

2SC3948

Contextual Info: MICROELECTRONICS 31E D 37MT7b2 ÜQl b bi l b IF M I T - 2 3 - I3 January 1990 Edition 1.1 — 1 . FUJITSU PRODUCT PROFILE - — 2SC3948 Silicon High Speed Power Transistor 2SC3948 500V, 10A A BSO LU T E M A X IM U M R A T IN G S P aram eter Sym bol S to ra ge T e m p e ra tu re R a nge

2SC3844

Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Contextual Info: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg