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    TRANSISTOR 2SK3799 Search Results

    TRANSISTOR 2SK3799 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK3799 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3799

    Abstract: K3799 Transistor
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3799 Preliminary Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.) High forward transfer admittance: |Yfs| = 7.0S (typ.)


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    2SK3799 k3799 K3799 Transistor PDF

    K3799

    Abstract: 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 K3799 2SK3799 equivalent transistor 2SK3799 2sk3799 K3799 Transistor K379 PDF

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    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 PDF

    K3799

    Abstract: transistor 2SK3799 K3799 Transistor 2SK3799
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 K3799 transistor 2SK3799 K3799 Transistor 2SK3799 PDF

    K3799

    Abstract: 2sk3799 2SK3799 equivalent transistor 2SK3799
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 K3799 2sk3799 2SK3799 equivalent transistor 2SK3799 PDF

    k3799

    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 k3799 PDF

    k3799

    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 k3799 PDF

    K3799

    Abstract: 2sk3799 2SK3799 equivalent K3799 Transistor
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 K3799 2sk3799 2SK3799 equivalent K3799 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


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    2SK3799 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


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    p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


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    BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


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    SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF