MARKING 2th sot363
Abstract: MARKING CODE 2th sot363 BP317 MDA996
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH2 NPN resistor-equipped double transistor Product specification 1999 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH2 FEATURES • Transistors with built-in bias resistors R1 and R2
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MBD128
115002/01/pp8
MARKING 2th sot363
MARKING CODE 2th sot363
BP317
MDA996
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lv 5682
Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically
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RD60HUF1
RD60HUF1
lv 5682
mar 835 mosfet
MAS 560 ag
TRANSISTOR D 5702
MOSFET, 3077
transistor k 2837
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transistor 2TH
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK452-100A/B
BUK452
-100A
-100B
T0220AB
transistor 2TH
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in
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BUK552-100A/B
BUK552
-100A
-100B
T0220AB
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transistor 2TH
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP6N10E
T0220AB
transistor 2TH
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ld 18
Abstract: transistor 2TH
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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BUK482-100A
OT223
D/100
-rI--41
OT223.
ld 18
transistor 2TH
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BUK443
Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Text: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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711Dfi2b
BUK443-60A/B
OT186
BUK443
BUK443-60A
BUK443-60B
TRANSISTOR C 557 B
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BUK637-400A
Abstract: BUK637-400B
Text: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
M89-1166/RC
BUK637-400A
BUK637-400B
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T160R
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
SQT404
T160R
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ixis mmo36-16
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7506-30
T0220AB
ixis mmo36-16
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B 647 AC transistor
Abstract: uav specification transistor 2TH
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK452-60A/B
BUK472-60A/B
BUK472
T186A
B 647 AC transistor
uav specification
transistor 2TH
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Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56303
Response AA0482
49/Response AA0482
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k443
Abstract: BUK443-100A BUK443-100B
Text: PHILIPS INTERNATIONAL bSE D E9 711DflEb □DbB'lSt. 172 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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K443-1OOA/B
buk443
-100a
-100b
-SOT186
k443
BUK443-100A
BUK443-100B
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BUK443
Abstract: BUK443-60A BUK443-60B
Text: PHILIPS INTERN ATIONAL bSE T> m TUDflEb 00b3^51 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK443-60A/B
OT186
-ID/100
BUK443
BUK443-60A
BUK443-60B
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BU2708DX
Abstract: transistor 2TH jvc capacitor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
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BU2708DX
BU2708DX
transistor 2TH
jvc capacitor
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 0D20bSD 7 SSE D N AUER PHILIPS/ DISCRE TE PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery
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0D20bSD
BUK627-400A
BUK627-400B
BUK627
-400A
T-39-H
bS3T31
0020bS4
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nh348
Abstract: BUZ45B D-19 V103 SD 347 transistor
Text: N AMER P H I L I PS / D IS CR E TE ObE PowerMOS transistor D • “ bbSBTBl OOmbtl 4 ■ BÜZ45B ' r - 3<?-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in
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BUZ45B
bbS3T31
Q014bb7
T-39-13
nh348
BUZ45B
D-19
V103
SD 347 transistor
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BUK436-1000B
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E b'ìE D • ^53*131 D03047S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies
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bb53R31
D03047S
BUK436-1000B
BUK436-1000B
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MN2488 equivalent
Abstract: MN2488 transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746
Text: SünñR pñ SPE C IFIC A TIO N S pp A SANKEN ELECTRIC CGMPANY, LTD. DEVICE TYPE NAME 3 ^ 7 - m n2488 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MN2488 1. mmwm Scope a }• 7 "s 7s & M N 2488 The present specifications shall apply to Sanken silicon power transistor type MN2488.
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MN2488
MN2488
MN2488.
SSE-21317
MN2488 equivalent
transistors MN2488
sanken power transistor MN2488
mn2488 transistor
MN2488 transistor equivalent
sanken lot number
sanken power transistor
MICA-14
G746
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transistor 2TH
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)
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BFX29
bb53T31
02773A
7Z22S09
bb53131
7ZZ2917
7Z22916
transistor 2TH
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C5024
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general
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BUK102-50GL
C5024
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T3D DIODE
Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
Text: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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0D307flS
BUK552-100A/B
T0220AB
BUK552
-100A
-100B
T3D DIODE
T3D 45 diode
T3D 55 diode
T3D 18 DIODE
Diode T3D 03
Diode T3D 35
dt t3d 13
BUK552-100A
BUK552-100B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET_ _ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for
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BUK107-50GL
up7-50GL
BUK107-50GL
1E-02
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK109-5OGL Logic level TOPFET_ _ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a
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BUK109-5OGL
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