TRANSISTOR 30 J 124 Search Results

qm300dy-h

Abstract: qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c
Contextual Info: Transistor modules Double arm ,center tap V cêx h *8 I j-r Type No. Pe Transistor section Ve *¥ e (sus) (V) (A) (A) (Wl p (A) 600 30 1.8 250 150 30 QMSOCY-H 600 50 3 310 150 QM75CY-H 600 75 4.5 350 150 QMtOOCY-H 600 100 6 620 150 100 QM150CY-H 600 150

LP1983

Abstract: motorola 039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ

RTM 866 - 485

Contextual Info: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: - 3 3 H 3 RZ3135B50W PHILIPS INTERNATIONAL 5bE ]> • Tiio aat. 0 0 4 ^ 0 2 124 ■ p h in PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 3.1 to 3.5 GHz.

ic TT 2222

Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
Contextual Info: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.

Contextual Info: KSC3074 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER SWITCHING • C om p le m en t to K SA 1244 ABSOLUTE MAXIMUM RATINGS Symbol C haracteristic Rating Unit C o lle cto r Base Voltage C o lle cto r E m itter V oltage VCBG j 60 V VCEO I 50 Em itter Base Voltage

2SD1762

Abstract: 230S d1760 D1864
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type

MEL78D

Contextual Info: DESCRIPTION M E L 78D transistor rejective features sensitivity CRO is NPN silicon planar photowith 3mm dim eter light filter epoxy package. It ultra high. illum ination and fast response time. <°-124> n 5.3 • • NPN SILICON PHOTO TRANSISTOR A,ì dimension in mm incb

Contextual Info: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo

CA324

Abstract: CA224 transistor v15 CA124 JCS-24 LM324AND CA2902 LM2902 LM324 LM 124 four amplifier
Contextual Info: A R R 430EE71 MGE D SECTOR GD31bS7 4 •HAS C A 124, C A 224, C A 324, C A 2902 L M 3 2 4 *, L M 2 9 0 2 * I S Q u ad O p eratio n al Am plifiers F o r C o m m e rcia l, Ind ustrial, an d Military A p p licatio n s A ugust 1991 Features Description • Operation from Single or Dual Supplies

HA12413

Abstract: 2SC458 C,D 2SA1029 2SC458 transistor 2sc458 Peak level meter ic Audio Circuit with IC 701
Contextual Info: H A 1 2 4 1 3 FM/AM IF SYSTEM The H IT A C H I H A 12413 is an IC fo r FM /A M IF system. Typical applications include cassette radios and modular stereos, fu n ctio ning and featuring as follow s. • FUNCTI ONS FM • IF A m p lilfie r With C.F. is inserted between the stages

BSS124

Contextual Info: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 -2.5 V Pin 1 Pin 2 G Type BSS 124 Vos 400 V % 0.12 A Type BSS 124 Ordering Code Q67000-S172 %S(on) 28 0 Pin 3 D Package Marking TO-92 SS 124 S Tape and Reel Information

Contextual Info: SIEMENS BSS 124 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Pin 1 Pin 2 D G Type ^DS BSS 124 400 V Type BSS 124 Ordering Code Q67000-S172 0.12 A Pin 3 f f DS(on) Package Marking 28 £1 TO-92 SS 124 S Tape and Reel Information

RCA-CA124

Abstract: CA324 CA124 CA224 92CS-24Z06 ca3243 transistor S67 ic lm324 LM324 transistor v15
Contextual Info: Operational Amplifiers _ 5 ' H _ C A 124, C A 224, C A 324, L M 3 2 4 * Q uad Operational Amplifiers For Com m erical, Industrial, and M ilitary Applications Features: • ■ • • ■ ■ • O p é ra tio n fro m s in g le o r d u a l s u p p lie s

HEMT marking P

Contextual Info: SA NY O S E M I C O N D U C T O R CORP T W O T b SEE D OOObTOO 3 T-3Ì - IS 2SK1240-1243 HEMT Series 2072 2073 N-Channel AIGaAs/GaAs Hetero Junction FET X-Band Very Low-l\loise Amp Applications 3186 Features • Very low noise & ' High associated gain

RCA LM324

Abstract: LM324L
Contextual Info: Operational Amplifiers HARRIS S E M I C O N D U C T O R RCA C A 124, C A 224, CA324, C A 2902, LM 324*, LM 2902* INTERSIL May 1990 Quad Operational Amplifiers For Commercial, Industrial, and Military Applications Features: A pp lica tio n s: • a a a ■

2SK1240-1243

Abstract: pa 2030a 2SK1241 2SK1240 2SK1242 2SK1243
Contextual Info: SANYO SEMICONDUCTOR CORP SEE 7T1707b D GOObTOO 3 T-3Ì -ZS 2SK1240-1243 HEMT Series 2072 N -C hannel AIGaAs/GaAs H etero J u n c tio n FET 2073 X-Band Very Low-l\loise Am p Applications 3186 F e a tu re s • Very low noise • High associated gain &

tr 30 f 124

Abstract: Q67000-S172 ss124
Contextual Info: BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124 Type BSS 124 Ordering Code Q67000-S172 S Tape and Reel Information

dvr circuit diagram

Abstract: st l 9302 transistor d145 mos 9368 9374 f 9368 7 seg bcd 74LS49 D133 D142
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ IN D 13 □ OUT 12 □ OUT 11 □ Vss 10 □ OUT 9 O UT □ 8 □ IN C 8 OUTPUT A □ V cc 7 2 +IN A Q □ OUT B 6 3 -IN A ^ □ +IN B 5 4 GND □ -IN B CONTROL p VOLTAGE 4 - D

Contextual Info: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power

FRG25AA60

Abstract: diode B87 SANSHA FRG25AA FRG25AA40 H150
Contextual Info: SANSHA ELECTRIC MFC CO SbE 7^1243 D 00 00 47 1 FRG25AA40/60 SEM J Ô77 X-z^-o^ F R G 2 5 A A is a medium power isolated mould diode suitable for high frequency application. • • • • • High Speed t r r ^ 2 0 0 n s If av>= 25A Isolated Mould devices with ViSo = 2500V

mos 4069

Contextual Info: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power

RD04HMS2

Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING

RD04HMS2

Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING