TRANSISTOR 342 G Search Results

transistor 342 G

Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

C67078-S3135-A2

Abstract: transistor 342 G BUZ342
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

318F

Abstract: AN569 MMBT2131T1 MMBT2131T3
Contextual Info: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Contextual Info: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

bipolar junction transistor

Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
Contextual Info: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.

GA200SA60SP

Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

CGC SWITCH

Abstract: transistor 342 pf GA200SA60SP
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: ON Semiconductort MMBT2132T1 MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS – V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 6 Symbol Value

GA200SA60SP

Abstract: GA200SA60S
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

MMBT2132T3

Abstract: 318F AN569 MMBT2132T3G
Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage

GA200SA60SP

Abstract: smps tig welding transistor 342 G
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

MOTOROLA TRANSISTOR T2

Abstract: motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3
Contextual Info: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Contextual Info: b3E D 5bM220S GD0Da4S HAP 342 g7 MICROWAVE PULSED POWER TRANSISTOR PH1214-25L REV. NC 10/31/91 n/A-COfl P H M /A-COM PHI, INC. o DESIGN CHARACTERISTICS • • • • • 300 uS Pulse Operation Broadband 1.2 - 1 .4 GHz Operation Common Base Configuration

Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol

brush dc motor control 200v 20a

Contextual Info: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

J645

Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Contextual Info: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,

ilpi -115

Abstract: ilpi - 003 3 phase igbt firing circuit for ac servo motor
Contextual Info: Make sure the next Card you purchase has. PWR-82340 and PWR-82342 SMART POWER H-BRIDGE MOTOR DRIVES FEATURES • Small Size 2.25” x 2.1” x 0.39” • 200 V and 500 V Capability • 30 A Current Capability • High-Efficiency MOSFET or IGBT Drive

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

318F

Abstract: AN569 MMBT2131T1
Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value

Contextual Info: S C S T H O M S O N IM^làì 5 HHHCTIsì(5)lfflH(ei_AM82731 -003 RF & MICROW AVE TR A NSISTO R S S-BAND RADAR APPLICATIO NS . R EFR A C TO R Y/G O LD METALLIZATION . EM ITTER SITE BALLASTED • 10:1 VSW R CAPABILITY . LOW THERM AL RESISTANCE ■ IN P U T/O U TP U T IM PEDANCE M A TC HING

Contextual Info: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in