AM82731 Search Results

AM82731 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
AM82731	Advanced Semiconductor	Transistor	Original	PDF
AM82731-001	Advanced Semiconductor	Transistor	Original	PDF
AM82731-001	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
AM82731-003	Advanced Semiconductor	Transistor	Original	PDF
AM82731-003	STMicroelectronics	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS	Original	PDF
AM82731-003	STMicroelectronics	RF & Microwave Transistor S-Band Radar Applications	Original	PDF
AM82731-003	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
AM82731-006	STMicroelectronics	RF & Microwave Transistor S-Band Radar Applications	Original	PDF
AM82731-006	STMicroelectronics	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS	Original	PDF
AM82731-006	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
AM82731-012	Advanced Semiconductor	Transistor	Original	PDF
AM82731-012	STMicroelectronics	RF & Microwave Transistor S-Band Radar Applications	Original	PDF
AM82731-012	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
AM82731-025	STMicroelectronics	RF & Microwave Transistor S-Band Radar Applications	Original	PDF

AM82731-025	STMicroelectronics	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS	Original	PDF
AM82731-025	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
AM82731-050	Advanced Semiconductor	Transistor	Original	PDF
AM82731-050	STMicroelectronics	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS	Original	PDF
AM82731-050	STMicroelectronics	RF & Microwave Transistor S-Band Radar Applications	Original	PDF
AM82731-050	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF

AM82731 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AM82731-050 Abstract: 6.0 ca Text: AM82731-050 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2L FLG The AM82731-050 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting	Original	PDF	AM82731-050 AM82731-050 6.0 ca
AM82731-006 Abstract: S042 radar amplifier s-band 2.7 2.9 GHZ Text: AM82731-006 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN	Original	PDF	AM82731-006 AM82731-006 S042 radar amplifier s-band 2.7 2.9 GHZ
radar amplifier s-band Abstract: radar amplifier s-band 2.7 2.9 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ AM82731-025 Text: AM82731-025 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING	Original	PDF	AM82731-025 AM82731-025 radar amplifier s-band radar amplifier s-band 2.7 2.9 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ
s-band 50 Watt power amplifier DATASHEET Abstract: AM82731-050 20n50 radar amplifier s-band 2.7 2.9 GHZ Text: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	PDF	AM82731-050 AM82731-050 s-band 50 Watt power amplifier DATASHEET 20n50 radar amplifier s-band 2.7 2.9 GHZ
AM82731-012 Abstract: No abstract text available Text: AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 12 W MIN. WITH 6.0 dB GAIN	Original	PDF	AM82731-012 AM82731-012
AM82731-050 Abstract: radar amplifier s-band 2.7 2.9 GHZ Text: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	PDF	AM82731-050 AM82731-050 radar amplifier s-band 2.7 2.9 GHZ
AM82731 Abstract: No abstract text available Text: AM82731 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS	Original	PDF	AM82731 AM82731
8w RF POWER TRANSISTOR NPN Abstract: gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor AM82731-003 S042 82731003 radar amplifier s-band 2.7 2.9 GHZ Text: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	PDF	AM82731-003 AM82731-003 8w RF POWER TRANSISTOR NPN gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor S042 82731003 radar amplifier s-band 2.7 2.9 GHZ
AM82731-012 Abstract: No abstract text available Text: AM82731-012 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2L FLG The AM82731-012 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization	Original	PDF	AM82731-012 AM82731-012
AM82731-003 Abstract: TRANSISTOR RF 1003 333p Text: AM82731-003 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-003 is a Common Base Device Designed for Pulsed SBand Radar Pulse Driver Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization	Original	PDF	AM82731-003 AM82731-003 TRANSISTOR RF 1003 333p
AM82731-012 Abstract: No abstract text available Text: AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 6.0 dB GAIN	Original	PDF	AM82731-012 AM82731-012
Untitled Abstract: No abstract text available Text: AM82731 NPN RF POWER TRANSISTOR DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. PACKAGE STYLE 400 2L FLG E FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting	Original	PDF	AM82731 AM82731
AM82731-003 Abstract: S042 Text: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	Original	PDF	AM82731-003 AM82731-003 S042
AM82731-025 Abstract: No abstract text available Text: AM82731-025 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING	Original	PDF	AM82731-025 AM82731-025

AM82731-001 Abstract: 395 transistor TRANSISTOR RF 1003 m 052 Text: AM82731-001 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-001 is a Common Base Device Designed for Pulsed SBand Radar Amplifier Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization	Original	PDF	AM82731-001 AM82731-001 395 transistor TRANSISTOR RF 1003 m 052
MRF648 Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC	Original	PDF	2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
"Phase Discriminator" Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of	Original	PDF	AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
2SC636 Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470 Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642	Original	PDF	2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Untitled Abstract: No abstract text available Text: SGS1H0MS0N 57. AM82731-012 ;IL11 ¥ M [ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS P R E LIM IN AR Y DATA i R E F R A C T O R Y /G O L D M ETA LL IZA TIO N • E M IT T E R S ITE BALLASTED ■ LO W T H E R M A L R E S IS T A N C E ■ IN P U T /O U T P U T M A T C H IN G	OCR Scan	PDF	AM82731-012 J1331Ã
Untitled Abstract: No abstract text available Text: SGS-THOMSON AM82731-050 1H[ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVER DRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE	OCR Scan	PDF	AM82731-050 AM82731-050
Untitled Abstract: No abstract text available Text: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •	OCR Scan	PDF	AM82731-025 AM82731
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SILICON POWER TRANSISTORS Ç - pBaAiN RA D fAt R Q Ti iOmR Q a nD u H AU H Ti R kA aN nQ sI is s _ I w m SCS "THOMSON The industry leader in S-Band Power, SGS-THOMSON offers a complete line of short, medium and long pulse transistors for civil and military radar applications up to 3.5 GHz. Refractory gold metallization and emitter site-ballasting	OCR Scan	PDF	AM82731 2931-125t AM831
Untitled Abstract: No abstract text available Text: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE	OCR Scan	PDF	AM82731 00b50f

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AM82731 Search Results

AM82731 Datasheets (21)

AM82731 Datasheets Context Search

AM82731-050

AM82731-006

radar amplifier s-band

s-band 50 Watt power amplifier DATASHEET

AM82731-012

AM82731-050

AM82731

8w RF POWER TRANSISTOR NPN

AM82731-012

AM82731-003

AM82731-012

Untitled

AM82731-003

AM82731-025

AM82731-001

MRF648

"Phase Discriminator"

2SC636

Untitled

Untitled

Untitled

TDA0161 equivalent

Untitled

Untitled