TRANSISTOR 40050 Search Results

TRANSISTOR 40050 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 40050 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30	PDF
A100D Abstract: TP5002S Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Linear Pow er Transistor The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed as a low power driver with high gain and can be operated in Class A, B or C.	OCR Scan	TP5002S A100D	PDF
2sb753 Contextual Info: TO SH IBA 2SB753 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm High Collector Current : 10 = —7A Low Collector Saturation Voltage	OCR Scan	2SB753 2SD843. --100V, 2sb753	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
Wacker Silicones p12 Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note Contextual Info: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available	Original		PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
5889 Abstract: pg9 gland AWG16 DC24V DIN 40050 Part 9 IEC 529 CA145 powder level sensor circuit diagram Contextual Info: LevelSensorNR100 Description Level Sensor NR 100 is designed to monitor liquids, granules, and powder. It is especially suitable for aggressive media and foodstuffs. Available as MIN or MAX monitor. Features ● ● ● ● ● MIN or MAX sensor transistor output	Original	LevelSensorNR100 20-turn 5889 pg9 gland AWG16 DC24V DIN 40050 Part 9 IEC 529 CA145 powder level sensor circuit diagram	PDF
m27x1 Abstract: 1015 TRANSISTOR CuZn39Pb3 transistor 1015 0Z051Z003009 0Z051Z003010 0Z051Z003012 transistor 936 DIN 40050 Part 9 IEC 529 ETFE material Contextual Info: LevelSensorNR60 Description Level Sensor NR 60 is designed to monitor water, oils and fuel. It may also be used in automatic filling systems. Features ● ● ● ● invasive mounting transistor output minimum or maximum sensor self-test function MIN sensor	Original	LevelSensorNR60 M14x1 M18x1 M27x1 0Z051Z003012 M27x1, 0Z051Z003011 0Z031Z010001 0Z051Z003010 m27x1 1015 TRANSISTOR CuZn39Pb3 transistor 1015 0Z051Z003009 0Z051Z003010 0Z051Z003012 transistor 936 DIN 40050 Part 9 IEC 529 ETFE material	PDF
3TE445 Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group	OCR Scan	FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
capacitor 10uF/63V Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS Contextual Info: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS	PDF

9412 transistor Abstract: working principle of encoder Contextual Info: Incremental Encoder Series 58 • Meets industrial standards · Synchro flange or clamping flange · Up to 20000 ppr at 5000 slits · 10 V . 30 V with short circuit protected push-pull transistor output · 5 V; RS 422 · Comprehensive accessory line · Cable or connector	Original	RS422 9412 transistor working principle of encoder	PDF
Contextual Info: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network	Original	AUR500 ASI10550	PDF
Contextual Info: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR 500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C C FULL R 4X.060 R B E P D FEATURES: • Internal Input Matching Network	Original	AUR500 21EFERENCE AUR500	PDF
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. IN D E X M A R K TOP (B O T T O M ) FEATURES • High power gain:Gpe>8.4dB	OCR Scan	2SK2974 2SK2974 450MHz 30dBm	PDF
J31 transistor Abstract: f j31 Contextual Info: SD1474 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI SD1474 is acommom emitter device, designed for pulsed applications in the 400-500 MHz frequency range. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I • Emitter Ballasted	Original	SD1474 SD1474 J31 transistor f j31	PDF
S6R-5-C200-N Abstract: transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p Contextual Info: UNIVERSAL MIDI SENSORS 50 x 50 mm COMPACT SENSORS • • • • New background and foreground suppression models Free voltage versions with relay output 10-30 Vdc version with transistor output Standard cable or M12 connection S6 SERIES The S6 series, thanks to the excellent detection performances and the variety of	Original	50x50 S6R-5-M50-P S6R-5-M50-N S6R-5-N20-P S6R-5-N20-N S6-5-F20 S6R-5-F20-P S6R-5-F20-N S6T-5-F20-P S6-5-G20 S6R-5-C200-N transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p	PDF
Contextual Info: s s e r v i;a o r '- iC 3 v .- sr: ' : o -r ^ TN3725A MMPQ3725 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings TA = 25°C unless otherwise noted	OCR Scan	TN3725A MMPQ3725 SOIC-16 TN3725A	PDF
NPN power transistor 15A amperes Abstract: npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11403508 DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex Contextual Info: 7 2 9 4 6 2 1 POWEREX INC m t/B iE X DËTJ 75T4L.21 0D057DS 3 J~'o • r - Í 3 ~ » ? DA11/DB12 NPN Power Switching Darlington Transistor Sets Powerex, Inc., H illls Street, Youngwood, Pennsylvania 15697 412 925-7272 300-350-800 Amperes/ 400-500 Volts Features:	OCR Scan	0D057DS DA11/DB12 DA11403508 Amperes/400-500 NPN power transistor 15A amperes npn darlington transistor 200 watts npn darlington transistor 150 watts D62T DA11503008 DB12408005 DB12508004 SWITCHING TRANSISTOR 144 amerex	PDF
2482 TRANSISTOR Abstract: X09321 Contextual Info: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR T OÆ9?21 400-500 MHz TOM 9321, 4 Pin TO -8 T4 TON9321, 4 Pin Surface Mount (SM3) B X09321, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor Broad Tuning Range Operating Case Temp. -40 °C to + 85 °C	OCR Scan	ON9321, X09321, 2482 TRANSISTOR X09321	PDF
AUR500 Abstract: ASI10550 Contextual Info: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The AUR500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. A B C FULL R 4X.060 R C B E FEATURES: • Internal Input Matching Network • PG = 9.5 dB at 500 W/500 MHz	Original	AUR500 AUR500 03ERENCE ASI10550	PDF

TRANSISTOR 40050 Search Results

TRANSISTOR 40050 Result Highlights (5)

TRANSISTOR 40050 Datasheets Context Search

2N2222A 338

RCA H 541

MG1007-42

A100D

2sb753

Transistor 2SA 2SB 2SC 2SD

transistor 5cw

Wacker Silicones p12

A5 GNE mosfet

5889

m27x1

3TE445

MHW721A2

capacitor 10uF/63V

9412 transistor

J31 transistor

S6R-5-C200-N

NPN power transistor 15A amperes

2482 TRANSISTOR

AUR500