MMPQ3725 Search Results

MMPQ3725

Contextual Info: MOTOROLA Order this document by MMPQ3725/D SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MMPQ3725 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

Contextual Info: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter

transistor mmpq3725 equivalent

Abstract: MMPQ3725
Contextual Info: ON Semiconductort Quad Core Driver Transistor MMPQ3725 ON Semiconductor Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEB 5.0 Vdc

Contextual Info: s s e r v i;a o r '- iC 3 v .- sr: ' : o -r ^ TN3725A MMPQ3725 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings TA = 25°C unless otherwise noted

TN3725A

Abstract: LB 122 NPN TRANSISTOR TN3725 MMPQ3725 SOIC-16 LB 122 transistor LB 122 NPN transistor A4t 35
Contextual Info: D is c r e t e P O W E R & S i g n a l ^ . T e c h n o lo g ie s TN3725A MMPQ3725 TN3725AI MMPQ3725 & XT . , N a t i o n a l _ , S e m i c o n d u c t o r ,M S O IC -1 6 NPN Switching Transistor Th is d e v ic e is d e sig n e d fo r high sp eed co re d rive r a pp licatio n s

Contextual Info: MMPQ3725 Quad Core Driver Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Emitter Voltage VCES 60 Vdc Emitter −Base Voltage VEB 5.0 Vdc IC 1.0 Adc TJ, Tstg −55 to +150 °C Collector Current —

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MMPQ3725 NPN Silicon m—i l — jn M otorola Preferred D evice E - r w — ¡3 □7-—I •— Ï3Ï t i­ l l - 1 n— — ^ [8-1 T — H CASE 751B-05, STYLE 4 SO-16 M AXIM UM RATIN G S Rating

MMPQ3725

Contextual Info: MOTOROLA Order this document by MMPQ3725/D SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MMPQ3725 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value

Contextual Info: MMPQ3725* CASE 751B-05, STYLE 4 SO-16 M AXIM U M RATINGS Symbol Value C o lle cto r-E m itte r V o lta g e VCEO 40 Vdc C o lle cto r-E m itte r V o lta g e VCES 60 Vdc Veb 5.0 Vdc 'c 1.0 A de T j- T stg - 55 to + 150 °C Rating Em itte r-B a se V olta g e

3725A

Abstract: MMPQ3725A
Contextual Info: MOTORCLA SC XSTRS/R F 1SE D I D [ J f lt 0 1 2 ^ I 'f iß -lS MMPQ3725, A CASE 751B-03, STYLE 1 SO-16 M A X IM U M RATINGS M M PQ 3725A Unit 40 50 V dc 60 70 Vdc Sym bol M M PQ 3725 Collector-Emitter Voltage v CEO Coiiector-Emitter V oltage VCES R ating V EB

diode

Abstract: diode array mmad1103 6700M SO-14 MMAD130 MMAD1105 MMAD1106 MMAD1107 MMAD1108
Contextual Info: SO -14, SO-16 Devices Maximum die size 75 mil x 115 mil C A S E 75 1B-05 Quad Transistors f j@ lc hpE @ lc Device MMPQ2222A MMPQ2369 MMPQ2907A MMP03467 MMPQ3725 MMPQ3799 MMPQ3904 MMPQ3906 M M PQ 6700M V BR CEO V(BR)CBO Min mA MHz Min mA 40 15 50 40 40 60 40

Contextual Info: SE M IC O N D U C T O R - TN3725A MMPQ3725 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. AbSOlUtG Maximum RâtinÇjS Symbol T A = 25°C unless o th e rw ise noted

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MMPQ3725 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

Contextual Info: MMPQ3725* CASE 751B-03, STYLE 1 SO-16 M AXIM UM RATINGS Symbol Value C o lle c to r -E m itte r V o lta g e Rating VCEO 40 Vdc C o lle c to r -E m itte r V o lta g e V CES 60 V dc E m itte r-B a s e V o lta g e Unit V EB 5.0 V dc C o lle c to r C u rre n t — C o n tin u o u s

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Contextual Info: M u ltip le B ip o la r T ra n s is to rs — Q u a d .% Davtee Type <v> Mtn MMPQ6502 BOTH 30 V CE SAT % Cob PF M fr ' mA MHz Min Max 0 .5 100 150 200 8 0 .4 10 150 CD7 S O IC -1 6 150 200 8 0 .4 10 150 CD3 T O -1 1 6 m volts d lc /lB & lc Max Configuralion

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device