2SC4821
Abstract: ITR07541 ITR07542 ITR07543 ITR07544 ITR07545
Text: Ordering number:ENN4131 NPN Epitaxial Planar Silicon Transistor 2SC4821 High-Definition CRT Display Video Output Driver Applications Applications Package Dimensions • High definition CRT display video output driver, wide band amplifier applications and high frequency
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ENN4131
2SC4821
2084B
2SC4821]
500mA)
2SC4821
ITR07541
ITR07542
ITR07543
ITR07544
ITR07545
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2SC4821
Abstract: No abstract text available
Text: Ordering number:EN4131 NPN Epitaxial Planar Silicon Transistor 2SC4821 High-Definition CRT Display Video Output Driver Applications Applications Package Dimensions • High definition CRT display video output driver, wide band amplifier applications and high frequency
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EN4131
2SC4821
2084B
2SC4821]
500mA)
2SC4821
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2SC4821
Abstract: EN4131
Text: Ordering number:EN4131 NPN Epitaxial Planar Silicon Transistor 2SC4821 High-Definition CRT Display Video Output Driver Applications Applications Package Dimensions • High definition CRT display video output driver, wide band amplifier applications and high frequency
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EN4131
2SC4821
2084B
2SC4821]
500mA)
2SC4821
EN4131
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2SC4821
Abstract: No abstract text available
Text: Ordering number:ENN4131 NPN Epitaxial Planar Silicon Transistor 2SC4821 High-Definition CRT Display Video Output Driver Applications Applications Package Dimensions • High definition CRT display video output driver, wide band amplifier applications and high frequency
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ENN4131
2SC4821
2084B
2SC4821]
500mA)
2SC4821
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DD 127 D TRANSISTOR
Abstract: No abstract text available
Text: CEP8060L/CEB8060L N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 60V , 80A , RDS ON =9.0mΩ @VGS=10V. RDS(ON)=12.0mΩ @VGS= 5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.
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CEP8060L/CEB8060L
O-220
O-263
DD 127 D TRANSISTOR
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AT-41486
Abstract: AT-41486-BLK AT-41486-TR1 NF50 S21E Silicon Bipolar Transistor Hewlett-Packard
Text: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz • High Gain-Bandwidth
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AT-41486
AT-41486
RN/50
AT-41486-BLK
AT-41486-TR1
NF50
S21E
Silicon Bipolar Transistor Hewlett-Packard
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Semefab Scotland
Abstract: lux sensor basic transistor 9014 SEMEFAB
Text: 413101 Visible Light Detector with Analog and Digital Outputs DESCRIPTION FEATURES The 413101 is a low cost 4-pin visible light sensor, with a current output which is directly proportional to the light level. It has a built in optical filter to provide a response which is close to the human
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413101-G-40-D2.
413101-15-S
Semefab Scotland
lux sensor
basic transistor 9014
SEMEFAB
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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marking symbol ER transistor
Abstract: "marking h" sc-62
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC5212 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2 S C 5 2 1 2 is a resin seated silicon N P N epitaxial type transistor. It designed with high collector current and small VcE sat).
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2SC5212
2SC5212
2SA1946.
SC-62
marking symbol ER transistor
"marking h" sc-62
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2SC4821
Abstract: No abstract text available
Text: Ordering num ber: EN4131 2SC4821 No. 4131 NPN Epitaxial Planar Silicon Transistor High Definition CRT Display Video Output Driver Applications Applications • High Definition CRT Display Video Output Driver, Wide Band Amp Applications and High Frequency Driver Applications.
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2SC4821
500mA)
2SC4821
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T he 2 S K 3 3 5 4 is N -ch an nel M O S Field E ffe ct T ra n sisto r PART NUMBER PACKAGE
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2SK3354
-220AB
2SK3354-S
O-262
2SK3354-Z
O-22QSMD
O-22QAB
MP-25)
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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transistor k 4110
Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili
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i-noa36Â
osit34Â
354G-01
transistor k 4110
K 4014 transistor
vqe 14e
TLO51
wf vqe 24 d
DIODE 4014
IC 4022
MOC70
S 417T
WF VQE 13
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Untitled
Abstract: No abstract text available
Text: BUZ45A 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 0 4 A A • 8.3A, 500V B O T T O M VIEW • rDS on = ° - 8 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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BUZ45A
BUZ45A
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Untitled
Abstract: No abstract text available
Text: • 4302571 0 D 5 3 fl3 t> Qfl3 ■ HAS BUZ45A 23 HARRIS N-Channel Enhancem ent-Mode Power Field-Effect Transistor August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 8.3A, 500V • rDS on = o .an • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds
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BUZ45A
BUZ45A
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz
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AT-41486
AT-41486
Rn/50
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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SMP60N06-18
Abstract: SMP60N06 1n2050
Text: f x Silico n ix SMP60N06-18 incorporated N-Channel Enhancement Mode Transistor 18 milli ohm rDS ON TÛ-220AB TOP VIEW PRODUCT SUMMARY V(BR)DSS r DS(ON) •d (V) (ß) (A) 60 0.018 60 o 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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SMP60N06-18
-220AB
10peration
SMP60N06-18
SMP60N06
1n2050
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