Untitled
Abstract: No abstract text available
Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to
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NSM11156DW6T1G
NSM11156DW6T1G
SC-88/SOT-363
NSM11156DW6/D
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419B-02
Abstract: NSM11156DW6T1G marking .544 sot363
Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to
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NSM11156DW6T1G
NSM11156DW6T1G
SC-88/SOT-363
NSM11156DW6/D
419B-02
marking .544 sot363
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Untitled
Abstract: No abstract text available
Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to
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NSM46211DW6T1G
NSM46211DW6T1G
SC-88/SOT-363
NSM46211DW6/D
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N5 npn transistor
Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to
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NSM46211DW6T1G
NSM46211DW6T1G
SC-88/SOT-363
NSM46211DW6/D
N5 npn transistor
N5 transistor SC-88
419B-02
NSM46211DW6
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419B-02
Abstract: NSM21356DW6T1G SC marking code NPN transistor
Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series
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NSM21356DW6T1G
NSM21356DW6T1G
SC-88/SOT-363
NSM21356DW6/D
419B-02
SC marking code NPN transistor
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419B-02
Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series
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NSM21156DW6T1G
NSM21156DW6T1G
SC-88/SOT-363
NSM21156DW6/D
419B-02
marking .544 sot363
NSM21
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Untitled
Abstract: No abstract text available
Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series
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NSM21156DW6T1G
NSM21156DW6T1G
SC-88/SOT-363
NSM21156DW6/D
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Untitled
Abstract: No abstract text available
Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series
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NSM21356DW6T1G
NSM21356DW6T1G
SC-88/SOT-363
NSM21356DW6/D
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NSB1706DMW5T1G
Abstract: No abstract text available
Text: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1G
NSB1706DMW5T1G,
SC-88A
NSB1706DMW5T1/D
NSB1706DMW5T1G
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Untitled
Abstract: No abstract text available
Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1G,
NSVB1706DMW5T1G
SC-88A
NSB1706DMW5T1/D
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Untitled
Abstract: No abstract text available
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
D42DG
BUD42D/D
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Untitled
Abstract: No abstract text available
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
BUD42D
BUD42D/D
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369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
BUD42D
BUD42D/D
369D
BUD42DT4
MPF930
MTP8P10
MUR105
l4 marking code diode
D42DG
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Untitled
Abstract: No abstract text available
Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1G,
NSVB1706DMW5T1G
NSB1706DMW5T1/D
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D42DG
Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
BUD42D
BUD42D/D
D42DG
BUD43D transistor
369D
BUD42DT4
MPF930
MTP8P10
MUR105
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2SC1223
Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and
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2SC3604
2SC3604
2SC1223
2SC2150
2SC2367
NEC NE "micro x" d
2SC2585
NEC NE "micro x"
2SC2148
NE AND micro-X
2SC2149
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Marking M60
Abstract: transistor 11
Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR
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NSM6056MT1G
SC-74
NSM6056M/D
Marking M60
transistor 11
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Untitled
Abstract: No abstract text available
Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR
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NSM6056MT1G
NSM6056M/D
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Untitled
Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
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NEC K 2500
Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2SC3604
2SC3604
15obots
NEC K 2500
N transistor NEC K 2500
2SC1223
transistor marking S00
2SC2367
NEC marking b
NEC PART NUMBER MARKING
2SC3603
2SC2150
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2SC2150
Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2SC3604
2SC3604
2SC3603
2SC2150
2SC1223
TRANSISTOR 2sC 5250
micro X
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: BF420/421 npn/pnp HIGH VOLTAGE SILICON TRANSISTOR TO-92. BF420 and BF421 are complementary NPN/PNP silicon planar epitaxial transistor . Designed for high voltage video amplifiers in colour television receivers including grid drive and in driver stages of high voltage line deflection
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BF420/421
BF420
BF421
200mA
830mW
10jiA
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Untitled
Abstract: No abstract text available
Text: BF420/421 ; n pn /pnp HIGH VOLTAGE SILICON TRANSISTOR TO-92. BF420 and BF421 are complementary NPN/PNP silicon planar epitaxial transistor . Designed for high voltage video amplifiers in colour television receivers including grid drive and in driver stages of high voltage line deflection
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BF420/421
BF420
BF421
200mA
830mW
10jiA
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