TRANSISTOR 4894 Search Results
TRANSISTOR 4894 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
2SC6026MFV |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
![]() |
||
CA3081F |
![]() |
CA3081 - Small Signal Bipolar Transistor |
![]() |
![]() |
|
CA3082 |
![]() |
CA3082 - Small Signal Bipolar Transistor |
![]() |
![]() |
|
TTC5886A |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
![]() |
||
TTA2097 |
![]() |
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
![]() |
TRANSISTOR 4894 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
|
Original |
BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300 | |
BFG198Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a |
Original |
BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198 | |
BUJ103AX
Abstract: BP317 BU1706AX
|
Original |
BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX | |
BP317
Abstract: BU1706AX BUJ204AX
|
Original |
BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX | |
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
Original |
BUJ103A O220AB SCA60 135104/240/02/pp12 | |
BUJ204AContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for |
Original |
BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A | |
DK 53 code transistor
Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
|
Original |
SC70-6 SCD47 113062/1100/01/pp8 DK 53 code transistor transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor | |
339 marking code SMD transistor
Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
|
Original |
M3D425 PDTA114EEF SC-89 OT490) PDTC114EEF. SCA60 115104/00/01/pp8 339 marking code SMD transistor TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358 | |
PDTA124XE
Abstract: PDTC124
|
Original |
M3D173 PDTA124XE SC-75 OT416) PDTC124XE. SCA55 117047/1200/01/pp8 PDTC124 | |
PHC20306
Abstract: BP317 MS-012AA MAM118
|
Original |
PHC20306 SC13b OT96-1 SCA54 135108/00/01/pp8 PHC20306 BP317 MS-012AA MAM118 | |
Contextual Info: DISCRETE SEMICONDUCTORS BLV2347 UHF power transistor Objective specification File under Discrete Semiconductors, SC08b Philips Semiconductors 1997 Oct 14 PHILIPS Philips Semiconductors Objective specification UHF power transistor BLV2347 FEATURES PINNING - SOT468A |
OCR Scan |
BLV2347 SC08b OT468A SCA55 i27067/oo/oi/P | |
Philips electrolytic 106 screw
Abstract: STR aluminium electrolytic capacitor
|
OCR Scan |
RX1214B350Y RX1214B350Y SCA53 127147/00/02/pp12 Philips electrolytic 106 screw STR aluminium electrolytic capacitor | |
sot416 marking code 26Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES |
Original |
M3D173 PDTA123JE PDTA123JE MAM345 SC-75 OT416) SCA55 117047/1200/01/pp8 sot416 marking code 26 | |
PDTC143XE
Abstract: PDTA143XE
|
Original |
M3D173 PDTC143XE PDTC143XE MAM346 SC-75 OT416) SCA60 115104/1200/01/pp8 PDTA143XE | |
|
|||
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES |
Original |
M3D173 PDTC123JE SC-75 OT416) PDTA123JE. MGA893 PDTC123JE SCA56 117047/1200/01/pp8 | |
BC337
Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
|
Original |
BUK107-50DS SC13a SCA54 137087/1200/02/pp12 BC337 BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage | |
PDTC123ET
Abstract: PDTA123ET
|
Original |
M3D088 PDTA123ET PDTC123ET. SCA55 117047/1200/01/pp8 PDTC123ET | |
MX0912B351YContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A |
Original |
MX0912B351Y OT439A SCA53 127147/00/02/pp12 MX0912B351Y | |
MX0912B251Y
Abstract: capacitor 470 uF
|
Original |
MX0912B251Y OT439A SCA53 127147/00/02/pp12 MX0912B251Y capacitor 470 uF | |
RX1214B300Y
Abstract: RX1214B300 L-Band
|
Original |
RX1214B300Y OT439A SCA53 127147/00/02/pp12 RX1214B300Y RX1214B300 L-Band | |
339 marking code SMD transistorContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114EEF FEATURES • Power dissipation comparable to |
Original |
M3D425 PDTC114EEF SC-89 OT490) PDTA114EEF. SCA60 115104/00/01/pp8 339 marking code SMD transistor | |
xl 6009Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION |
Original |
BLV920 SC08a BLV920 OT171 SCD38 123052/1500/01/pp12 xl 6009 | |
transistor 359 AJContextual Info: DISCRETE SEMICONDUCTORS DAT MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides |
Original |
MZ0912B50Y SCA53 127147/00/02/pp12 transistor 359 AJ | |
marking P33 transistorContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT |
Original |
M3D088 PDTC143TT MAM360 PDTC143TT SCA60 115104/1200/01/pp8 marking P33 transistor |