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    TRANSISTOR 5BM Search Results

    TRANSISTOR 5BM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5BM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK444

    Abstract: BUK444-800A BUK444-800B YA11
    Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    7110fl2b BUK444-800A/B OT186 BUK444 -800A -800B BUK444-800A BUK444-800B YA11 PDF

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B PDF

    transistor 5BM

    Abstract: BUK443 BUK443-60A BUK443-60B
    Contextual Info: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In


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    0D3D51S BUK443-60A/B PINNING-SOT186 BUK443 transistor 5BM BUK443-60A BUK443-60B PDF

    Contextual Info: b3E D 5bM220S GD0Da4S HAP 342 g7 MICROWAVE PULSED POWER TRANSISTOR PH1214-25L REV. NC 10/31/91 n/A-COfl P H M /A-COM PHI, INC. o DESIGN CHARACTERISTICS • • • • • 300 uS Pulse Operation Broadband 1.2 - 1 .4 GHz Operation Common Base Configuration


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    5bM220S PH1214-25L PDF

    Contextual Info: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C


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    TT50M ATC100A 5bM220S PDF

    equivalent transistor c 243

    Abstract: VDD400 "RF MOSFET" 400v 10 amp n-channel mosfet equivalent transistor an 243 f10 transistor 10F10 LF4030C equivalent transistor rf "30 mhz" D8s mosfet
    Contextual Info: A jfc C D V i m an A M P com pany RF MOSFET Power Transistor, 30W, 40V 500 -1000 MHz LF4030C V2.00 Features • • • • • • N-Channel Enhancement Mode Device Gold Metallized Resfet Structure Lower Capacitances for Broadband Operation Common Source Configuration


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    LF4030C 5b422D5 equivalent transistor c 243 VDD400 "RF MOSFET" 400v 10 amp n-channel mosfet equivalent transistor an 243 f10 transistor 10F10 LF4030C equivalent transistor rf "30 mhz" D8s mosfet PDF

    Ps720c

    Abstract: PS9303 PS256D1 PS9305 wy 636 transistor PS2381 PS9306 IGBT ac switch in SSR PS9317 PART NUMBERING SYSTEM FOR RENESAS IC
    Contextual Info: O P T O C O U P L E R S + S O L I D S TAT E R E L AY S 2011 www.cel.com California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Business Division of Renesas Electronics Corporation CSDBD . These


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    MLM396N

    Abstract: MLM396I
    Contextual Info: MLM196N/ MLM396N 1OA ADJUSTABLE THREE TERMINAL NEGATIVE REGULATORS MêIêê Commercial or Screened to various test methods of MIL-STD-883 BASIC -1 .25V to -15V REGULATOR FEATURES • • • • • • • 1OA Guaranteed output current 100% Burn-in in thermal limit


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    MLM196N/ MLM396N MIL-STD-883 MLM196N MLM396N MLM396I PDF

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


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    VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S PDF

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 PDF

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 PDF

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ PDF

    2N6665

    Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
    Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


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    SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953 PDF

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175 PDF

    5bm Marking

    Abstract: MIC2295 CDRH4D18 LQH32CN4R7M23 MIC2295BD5 MIC2295BML MIC2295YD5 MIC2295YML MIC6211
    Contextual Info: MIC2295 High Power Density 1.2A Boost Regulator General Description Features The MIC2295 is a 1.2Mhz, PWM dc/dc boost switching regulator available in low profile Thin SOT23 and 2mm x 2mm MLF package options. High power density is achieved with the MIC2295’s


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    MIC2295 MIC2295 M9999-052402 5bm Marking CDRH4D18 LQH32CN4R7M23 MIC2295BD5 MIC2295BML MIC2295YD5 MIC2295YML MIC6211 PDF

    sick wl 33

    Abstract: transistor 5BM LA 2785 sick WL sick wl 4G-2 2F330
    Contextual Info: P R O D U C T I N F O R M A T I O N Photoelectric Reflex Switch WL 4C-1 for Transparent Objects WL 4G-2 Range 1.6 m Fe a tu res: • Detection of glass, transparent foils • Red ¡ight sender LED to assist with setting-up • Polarisation filter which enables


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    110th sick wl 33 transistor 5BM LA 2785 sick WL sick wl 4G-2 2F330 PDF

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp PDF

    TE809

    Contextual Info: 2 SE d H/A-con p h o m sttaaos ddddssd ?th » m a p T-33-/S M/A-COM PHI, INC. AfiiCC 1742 CRENSHAW BLVD. TORRANCE. CALIFORNIA 9050 1 (213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET ABSOLUTE MAXIMUM RATINGS PH04045-400H


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    T-33-/S PH04045-400H I0083R3BP500X> CK06IXI04K> 100B470JP900X 0i330JP50CBO i00l7KS P500X> 22Our TE809 PDF

    DV28120V

    Abstract: 57-1522 DV28120 R120P ldq06a
    Contextual Info: 5642205 M/A-COM P H I INC AS ]>Ë1 Sfa42HDS 00D047? ] W~T ' 3 ? - * ^ DV28120V 1 n N-Channel Enhancement-Mode Push-Pull RF MOSPOWER 175 MHz 120W 28-35V 10 dB V Package FEATURES • ■ ■ ■ ■ ■ ■ 20:1 VSWR No Thermal Runaway Broadband Capability Class A, B, C


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    sb42E0S DV28120V 8-35V 57-1522 DV28120 R120P ldq06a PDF

    transistor 5BM

    Abstract: BC237
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current


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    MMBD6100LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor 5BM BC237 PDF

    MIC710

    Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
    Contextual Info: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes


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    110-E77-20. MIC710 XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107 PDF

    LT 1153

    Contextual Info: /Turm LTC1153 T E C H N O LO G Y Auto-Reset Electronic Circuit Breaker FCRTURCS DCSCRIPTIOH • Programmable Trip Delay: 15ns to >100ms The LTC1153 electronic circuit breaker drives a low cost ■ Programmable Trip Current: 1 mA to >20A N-channel MOSFET to interrupt power to a sensitive


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    LTC1153 100ms LTC1153 74C193 ITC1153 1N4148 47jiF LT 1153 PDF

    transistor 5BM

    Abstract: st 3844b 5bm Marking 3842 PWM power supply application note 5bm transistor AZ3842B 4800 power mosfet 5Bp marking AZ3842 3844b
    Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AZ3842B/3B/4B/5B General Description Features The AZ3842B/3B/4B/5B are high performance fixed frequency current-mode PWM controller series. The difference between AZ384XA and AZ384XB is that they have different start-up currents.


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    AZ3842B/3B/4B/5B AZ384XA AZ384XB transistor 5BM st 3844b 5bm Marking 3842 PWM power supply application note 5bm transistor AZ3842B 4800 power mosfet 5Bp marking AZ3842 3844b PDF

    vc 3842

    Abstract: transistor 5BM
    Contextual Info: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AZ3842B/3B/4B/5B General Description Features The AZ3842B/3B/4B/5B are high performance fixed frequency current-mode PWM controller series. The difference between AZ384XA and AZ384XB is that they have different start-up currents.


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    AZ3842B/3B/4B/5B AZ3842B/3B/4B/5B AZ384XA AZ384XB vc 3842 transistor 5BM PDF