Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2sc2320

Abstract: TRANSISTOR 2sc2320 2SC2320/L
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPfTAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING ¿5.6M AX frequency voltage amplify application.

NTE7404

Abstract: NTE74HC04 transistor 6y NTE7406 NTE74LS05 NTE7400 NTE7408 NTE7409 NTE74LS04 NTE74LS00
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7214 16-Lead DIP, See Diag. 249 TRI-STATE Dual 4:1 Multiplexer NTE740Q, NTE74C00, 14-Lead DIP, See Diag. 247 NTE74H00, NTE74HC00, NTE74HCT00, NTE74LS00, NTE74S00 14-Lead DIP, See Diag. 247 NTE7401,

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

NTE74LS21

Abstract: NC3A
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate NTE7411, NTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11 Triple 3-Input Positive AND Gate

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7214 16-Lead DIP, See Diag. 249 TRI-STATE Dual 4:1 Multiplexer Strobe 1G VCC B Address Strobe 2G Data Input Q A Address Data Input Data Input Data Input Data Input Data Input Q Data Input 14-Lead DIP, See Diag. 247

NTE7470

Abstract: NTE746 NTE7454 NTE74LS63 NTE74LS55 NTE7460 NTE74H53 NTE74H54 NTE74H55 NTE74H60
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74H53 14-Lead DIP, See Diag. 247 Expandable AND/OR Invert Gate NTE74H54 14-Lead DIP, See Diag. 247 4-W ide AND/OR Invert Gate NTE7454 14-Lead DI P, See Diag. 247 4-W ide AND/OR Invert Gate Q v cc A r i

electrical symbols

Abstract: ScansU9X22
Contextual Info: TRANSISTOR SYMBOLS T U N G - S O L -TRANSISTOR ELECTR ICA L SYMBOLS SMALL SIGNAL AND HIGH FREQUENCY PARAMETERS AT SPECIFIED BIAS hQb Common base - output admittance, input AC o p e n -c ircu ite d hjb Common base - input impedance, output AC s h o r t - c ir c u it e d

NTE7460

Abstract: NTE74LS63
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74HS3 14-Lead DIP, See Diag. 247 Expandable AND/OR Invert Gate A r i ^ 0V E Q NTE74H55 14-Lead DIP, See Diag. 247 Expandable 2-Wide 4-Input AND/OR Invert Gate NTE74LS55 14-Lead DIP, See Diag. 247 Expandable 2-Wide 4-Input AND/OR Invert Gate

nte74366

Abstract: IT 249 NTE7438
Contextual Info: N T E ELECTRONICS INC 55E » bMBlSS6 0 0 0 3 0 0 3 H IT S - MOT * N T E T T P = TRANSISTOR TRANSISTOR LOGIC) Dual 4-Llne-to-1 -Line 16-Lead DIP, See Dlag 249 Data Selector/Multiplexer T - H 3 -0 I 20-Lead DIP, See Dlag 294 Octal Transparent 20-Lead DIP, See Dlag 294

Contextual Info: ELM98xxxxC CMOS Voltage regulator •General description ELM98xxxxC is CMOS voltage regulator, which mainly consists of reference voltage source, error amplifier, short-protected control transistor, thermal protection circuit, output voltage setting resistors. The standard output

UN1116

Abstract: UNR1116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol

D665

Abstract: SI4532DY w992
Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

UN1116

Abstract: XN6116
Contextual Info: Composite Transistors XN6116 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Rating Collector to emitter voltage of element Collector current Ratings Unit VCBO –50 V –50 V –100 mA Total power dissipation

UN1116

Abstract: UNR1116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planer transistor ● 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3

UN1116

Abstract: UNR1116 XP06116 XP6116
Contextual Info: Composite Transistors XP06116 XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter

UN1116

Abstract: UNR1116 XP06116 XP6116
Contextual Info: Composite Transistors XP06116 XP6116 Silicon PNP epitaxial planer transistor 5 4 ● 0.2±0.1 5° • Features ● 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 6 Unit: mm (0.425) 0.2±0.05 For switching/digital circuits Two elements incorporated into one package.

Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit VCBO VCEO −50 −50 V V IC −100

UN1116

Abstract: XP6116
Contextual Info: Composite Transistors XP6116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1116 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings

UN2116

Abstract: UNR2116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package

9114

Abstract: ic 9114 UN9111 UN9112 UN9113 UN9114 UN9115 UN9116 UN9117 UN9118
Contextual Info: Transistors with built-in Resistor / 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 1.6±0.15 0.4 ● ● ● ● ● ● 0.2 -0.05 1.0±0.1

UN2116

Abstract: UNR2116 XN06116 XN6116
Contextual Info: Composite Transistors XN06116 XN6116 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number Parameter Collector-base voltage (Emitter open)