TRANSISTOR 7 BW 48 Search Results

H7CR-BW-500

Abstract: H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER
Contextual Info: Digital Counter H7CR DIN 48 x 48 mm Counters with Easy-to-use Functions Designed with an emphasis on ease of operation. All models except -A, and -SA type equipped with prescale function which displays in units of actual physical parameters (length, volume, etc.).

H7CR OMRON DIGITAL COUNTER

Abstract: H7CR manual Omron H7CR H7CR-BW-500 H7CR-B manual Omron H7CR-B h7cr-8 H7CR-BW H7CR COUNTER OMRON free pdf transistor a4s
Contextual Info: Digital Counter H7CR DIN 48 x 48 mm Counters with Easy-to-use Functions Designed with an emphasis on ease of operation. All models except -A, and -SA type equipped with prescale function which displays in units of actual physical parameters (length, volume, etc.).

QF30AA60

Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
Contextual Info: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V

transistor su 312

Contextual Info: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1068 C D M A 1 0 .0 -W a tt 1.93 G H z to 1.99 G H z L in e a r P o w e r A m p lifie r M o d u le • ■ 45 iB Sain PláB:+48 dBm atkins-Johnson’s SA1068 Power W Amplifier provides exceptional

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical

Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

ELTEC INSTRUMENTS

Abstract: CH-8712 staefa CH-8712 Pyroelectric Detectors
Contextual Info: Model 482 High Gain Thermally Compensated Pyroelectric IR Detector Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 482 consists of two lithium tantalate sensing elements, a load

transistor 7350 A

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
Contextual Info: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Contextual Info: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

rogers 4003 characteristics

Contextual Info: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold

Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

CA3600E

Abstract: 2n3055 pinout terminals of 2n3055 2N3055 inverter schematic diagram 2n3055 voltage regulator HCA10014 1A Dual Power Operational Amplifier t 2N3055 1N914 CA3085
Contextual Info: HCA10014 Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output HCA10014 op amp combines the advantage of both CMOS and bipolar transistors. Gate protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very high input

100B100JW500X

Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated

2SC4848

Abstract: c5ca
Contextual Info: h* 7 > y X $ / T ransistors 2SC 4848 2SC4848 X fc°$ * V 7 V7*Is - 1 M NPN y 1J U > h 7 > V * $ Epitaxial Planar N P N Silicon Transistor X 't y 3-'s'? \s%r 3. \s— $ /S w itc h in g Regulator • • « * Dimensions U n it: mm) 1) 4.5±0.2 r t f = 0 .1 8 ms (Typ.) ( lc = 5 A )

J555

Contextual Info: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

block diagram of ca3130

Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
Contextual Info: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input

pin diagram of IC ca3130

Abstract: IC1 CA3130 CURRENT TO VOLTAGE CONVERTER CA3130 ca3130 equivalent CA3131 IC1 CA3130 CA3600E about the IC ca3130 CA3130AS pin diagram of ca3130
Contextual Info: CA3130, CA3130A S E M I C O N D U C T O R 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage Provides: - Very High ZI = 1.5 TΩ 1.5 x 1012Ω (Typ) - Very Low II = 5pA (Typ) at 15V Operation

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: IC1 CA3130 CA3130 peak detector pin diagram of IC ca3130 ca3130 pin diagram of ca3130 ca3130 equivalent ca31305 block diagram of ca3130 CA3130 as a low pulse generator
Contextual Info: CA3130 S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features Description • MOSFET Input Stage Provides: - Very High ZI = 1.5 TΩ 1.5 x 1012Ω Typ. - Very Low II = 5pA Typ. at 15V Operation = 2pA Typ. at 5V Operation