TRANSISTOR 813 Search Results
TRANSISTOR 813 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR 813 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to |
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NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D | |
419B-02
Abstract: NSM11156DW6T1G marking .544 sot363
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NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D 419B-02 marking .544 sot363 | |
Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to |
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D | |
N5 npn transistor
Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 | |
LIMITING INRUSH CURRENT npnContextual Info: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from |
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LP395 LP395 LIMITING INRUSH CURRENT npn | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
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Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 | |
419B-02
Abstract: NSM21356DW6T1G SC marking code NPN transistor
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NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D 419B-02 SC marking code NPN transistor | |
419B-02
Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
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NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D 419B-02 marking .544 sot363 NSM21 | |
Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series |
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NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D | |
Contextual Info: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series |
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NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D | |
BFR540
Abstract: MSB003
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BFR540 BFR540 125006/03/pp16 MSB003 | |
BFG35Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor |
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BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35 | |
TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
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OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 | |
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marking u6Contextual Info: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
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NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D marking u6 | |
2SC2945
Abstract: QK SOT89 2SC2954 mark qk sot
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2SC2954 2SC2954 2SC2945 QK SOT89 mark qk sot | |
JAPAN transistor
Abstract: TO263 transistor TS11B to263-7 TS5B TS15B TS7B to-263
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O-263) O-263 MS101190 JAPAN transistor TO263 transistor TS11B to263-7 TS5B TS15B TS7B to-263 | |
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter |
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D2flD31 PH2369 oa2fl03b | |
BCP68
Abstract: BCP69T1 BCP69T3
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BCP69T1 OT-223 BCP69T1/D BCP68 BCP69T1 BCP69T3 | |
NATIONAL SEMICONDUCTOR TO-92
Abstract: transistor a 92 JAPAN transistor Z03A Z03B Z03C Z03D Z03E Z03G Z03H
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MS101171 NATIONAL SEMICONDUCTOR TO-92 transistor a 92 JAPAN transistor Z03A Z03B Z03C Z03D Z03E Z03G Z03H | |
LM295
Abstract: LM195 LP395 LP395Z Z03A LIMITING INRUSH CURRENT npn
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LP395 LP395 LM295 LM195 LP395Z Z03A LIMITING INRUSH CURRENT npn | |
LIMITING INRUSH CURRENT npn
Abstract: LP395 LP395Z LM195 Z03A NPN center base transistors
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LP395 LP395 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. LIMITING INRUSH CURRENT npn LP395Z LM195 Z03A NPN center base transistors | |
LIMITING INRUSH CURRENT npnContextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from |
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LP395 LIMITING INRUSH CURRENT npn | |
NEC 2533
Abstract: transistor c 6093 NEC k 787 2SC4568 2533 nec
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2SC4568 2SC4568 NEC 2533 transistor c 6093 NEC k 787 2533 nec |