TRANSISTOR 908 P Search Results

TRANSISTOR 908 P Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 908 P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Accessories Abstract: pulsotronic 9914-0800 ultrasonic motion detector pulsotronic 8100-2500 pulsotronic ultrasonic proximity detector ultrasonic motion detector sensor 9914-0800 pulsotronic 9914-1000 5V 3A SPDT RELAY Contextual Info: NEXT FIND IT Table of Contents CLICK FOR PDF FILE CLICK FOR PDF FILE CLICK FOR PDF FILE OVERVIEW – Inductive Proximity Sensors CYLINDRICAL Inductive Proximity Sensors LIMIT STYLE Inductive Proximity Sensors Introduction .4	Original		PDF
transistor bd 202 Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711 Contextual Info: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711	PDF
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737	PDF
Contextual Info: ALTECH DIN-Rail Power Supplies ENERGY SAVER Choose your product from a wide range of features and options, suitable for almost all applications. Slimline 6-19 • Small in size - narrow footprint • Powerful with generous power reserves • Simple usage • 10W to 100W	Original	CA703 CA802 CA803 CA903 CGT10U	PDF
Contextual Info: PST-960 Series Features: • Three-Phase AC 340 ~ 550V wide range input • High efficiency 91% and low dissipation • Protections: Short Circuit / Overload / Over Voltage / Over Temperature • Optional parallel function 1+1 • Cooling by free air convection	Original	PST-960 EN61000-6-2 EN50082-2) PST-96024 PST-96048 80mVp-p 20MHz	PDF
E223770 Abstract: hy 1418 kf90c54 FT-X1 inductive proximity detector ic din mount 96 pin cable connector electromagnetic welding machine wiring diagram PLC material inductive sensor IPS 6000 Contextual Info: Table of Contents Introduction and Technical Information .3-7 DC-3	Original	Wire-Standard5UN024-Q65 AIS30N15UP024-2M AIS30N15UP024-Q65 K1F90VA K2F90V5 K2F90V5R KF90C53N KF90C53NR KF90C53P KF90C53PR E223770 hy 1418 kf90c54 FT-X1 inductive proximity detector ic din mount 96 pin cable connector electromagnetic welding machine wiring diagram PLC material inductive sensor IPS 6000	PDF
Contextual Info: Panasonic CCD Area Image Sensor MN3713FE 4.5mm 1/4 inch EIS CCD Area Image Sensor •Overview ■Pin Assignments The M N3713FE is a 4.5mm (1/4 inch) Interline Transfer CCD (IT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion	OCR Scan	MN3713FE N3713FE horizontalX616 bR32fi52	PDF
BDX 241 Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905	PDF
JS-001-2010 Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System	Original	AWB7227 AWB7227 JS-001-2010	PDF
MG400H1FK1 Abstract: LF400A Contextual Info: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage	OCR Scan	MG400H1FK1 TjSl85' MG400H1FK1 LF400A	PDF
20-PIN Abstract: LR36685 RJ21P3BA0PT Contextual Info: BACK RJ21P3BA0PT 1/1.8-type Interline Color CCD Area Sensor with 3 300 k Pixels RJ21P3BA0PT • Package : 20-pin half-pitch DIP [Plastic] P-DIP020-0500 Row space : 12.20 mm DESCRIPTION The RJ21P3BA0PT is a 1/1.8-type (9.13 mm) solidstate image sensors that consists of PN photodiodes and CCDs (charge-coupled devices). With	Original	RJ21P3BA0PT 20-pin P-DIP020-0500) RJ21P3BA0PT LR36685	PDF
20-PIN Abstract: LR36685 RJ21P3AA0PT Q455 SMR 56-7 Contextual Info: BACK RJ21P3AA0PT 1/1.8-type Interline Color CCD Area Sensor with 3 370 k Pixels RJ21P3AA0PT • Package : 20-pin half-pitch DIP [Plastic] P-DIP020-0500 Row space : 12.20 mm DESCRIPTION The RJ21P3AA0PT is a 1/1.8-type (8.93 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With	Original	RJ21P3AA0PT 20-pin P-DIP020-0500) RJ21P3AA0PT LR36685 Q455 SMR 56-7	PDF
AWT6282 Abstract: E4419B E9301H agilent HBT transistor series Contextual Info: Application Note UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6278 • AWT6279 • AWT6282 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed UMTS High Band, and operates from a single lithiumion (Li-ion) battery. The amplifier input and output	Original	1700/IMT/PCS AWT6278 AWT6279 AWT6282 AWT6282 E4419B E9301H agilent HBT transistor series	PDF
MURATA GSM FILTER Contextual Info: Advance Information MMM5063/D Rev. 0.1, 07/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/	Original	MMM5063/D MMM5063 MMM5063 GSM900/DCS1800/ PCS1900 GSM900 DCS1800 MMM5063/D MURATA GSM FILTER	PDF

GSM/GSM module circuit diagram Abstract: GRM36COG470J50 Murata switchplexer DCS1800 GSM900 MMM5063 PCS1900 Contextual Info: Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Advance Information MMM5063/D Rev. 0.2, 09/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.	Original	MMM5063/D MMM5063 MMM5063 GSM900/DCS1800/ PCS1900 GSM/GSM module circuit diagram GRM36COG470J50 Murata switchplexer DCS1800 GSM900	PDF
Contextual Info: TO SHIBA 3SK292 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK292 mm TV TUNER, VHF RF AM PLIFIER APPLICATION • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crgg = 20fF Typ. • Low Noise Figure	OCR Scan	3SK292	PDF
J4109 Abstract: AWL9224 AWL9224RS28P0 AWL9224RS28P6 AWL9224RS28Q1 EVA9224RS28 Contextual Info: AWL9224 2.4 GHz 802.11b/g WLAN Power Amplifier PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • 3% EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM Modulation at 54 Mbps • -38 dBc ACPR 1st Sidelobe at +23 dBm with IEEE 802.11b at 1, 2, 5.5, 11 Mbps • -54 dBc ACPR 2nd Sidelobe at +23 dBm with	Original	AWL9224 11b/g 11b/g J4109 AWL9224 AWL9224RS28P0 AWL9224RS28P6 AWL9224RS28Q1 EVA9224RS28	PDF
amplifier blw96 Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414 Contextual Info: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents	OCR Scan	BLW96 7110fl2b DDb3453 amplifier blw96 BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414	PDF
BLX68 Abstract: uhf tv power transistor 500 w 8w RF POWER TRANSISTOR NPN philips rf choke ferrite transistor c 1971 FX1115 G027 Contextual Info: PH IL IPS I N T E R N A T I O N A L MAINTENANCE TYPE MIE J> m ?110fi2b D027ÛG3 S S P H I N BLX68 - T -3 3 -0 7 — U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with	OCR Scan	110fi2b BLX68 -V-33-07 BLX68 uhf tv power transistor 500 w 8w RF POWER TRANSISTOR NPN philips rf choke ferrite transistor c 1971 FX1115 G027	PDF
ic tea 1090 Abstract: M/ic rca 645 TEA 1090 Contextual Info: SGS-THOMSON 5 7 . MD@Bi ilLim©ISID©i SD 1542-42 RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF • 600 WATTS min. IFF 1030 or 1090 MHz . REFRACTORY GOLD METALLIZATION ■ 6.0 dB MIN. GAIN . LOW THERMAL RESISTANCE FOR	OCR Scan	SD1542-42 SD1542-42 SD154242 ic tea 1090 M/ic rca 645 TEA 1090	PDF
Contextual Info: MMBT4124LT1 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 30 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC 200 mAdc Collector Current − Continuous	Original	MMBT4124LT1 OT-23 O-236)	PDF
class g power amplifier schematic Abstract: EC-2067 class h power amplifier schematic 2067-1 cellular phone amplifier power control transistor class a power amplifier 2067 Contextual Info: EC-2067 PRELIMINARY DATA 1W CLASS A POWER AMPLIFIER 800–1000 MHz Features Applications n n n n n +32.0 dBm Maximum Output Power at 3.6V Vcc Single 3.3V to 6.0V Power Supply 32 dB Small Signal Gain Power-down Capability n n n Analog Cellular ISM 900 2-Way Paging	Original	EC-2067 EC-2067 SS-000083-000 class g power amplifier schematic class h power amplifier schematic 2067-1 cellular phone amplifier power control transistor class a power amplifier 2067	PDF
AWL9924 Abstract: AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1 Contextual Info: AWL9924 2.4/5 GHz 802.11a/b/g WLAN Power Amplifier PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • 3.8% EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -40 dBc 1st Sidelobe, -55 dBc 2nd sidelobe	Original	AWL9924 11a/b/g 11a/b/g AWL9924 AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1	PDF
TRANSISTOR TCD 100 LS Contextual Info: TCD5481AD T O SH IB A TO SH IBA CCD A R E A IMAGE SENSOR CCD Charge Coupled Device TCD548 1 AD GENERAL The TCD 5481AD is an interline CCD area im age sensor developed for a NTSC system Color television camera. This device has signal pixels o f 858 (horizontal) x 614	OCR Scan	TCD5481AD TCD548 5481AD TRANSISTOR TCD 100 LS	PDF

TRANSISTOR 908 P Search Results

TRANSISTOR 908 P Result Highlights (5)

TRANSISTOR 908 P Datasheets Context Search

Accessories

transistor bd 202

2N3904 331 transistor

E223770

BDX 241

JS-001-2010

MG400H1FK1

20-PIN

20-PIN

AWT6282

MURATA GSM FILTER

GSM/GSM module circuit diagram

J4109

amplifier blw96

BLX68

ic tea 1090

class g power amplifier schematic

AWL9924

TRANSISTOR TCD 100 LS