TRANSISTOR 911 Search Results

Contextual Info: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

BF115

Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
Contextual Info: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti­

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the

2sc4571

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

amplifier blw96

Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
Contextual Info: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents

PR37 RESISTOR

Abstract: PR37 resistors
Contextual Info: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

BLT13

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency

GE Transistor Manual

Abstract: transistor k 316 35820 transistor circuit design
Contextual Info: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing

2222 031 capacitor philips 2222 424

Abstract: 2222 031 capacitor philips BLF247B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain

CIL9263

Abstract: TRANSISTOR K 135 J 50
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CIL9263 TO237 BCE High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage

BUK426-800A

Contextual Info: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

marking sop-12

Abstract: 2N2222 TRANSISTOR TOSHIBA
Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

ULN2003

Contextual Info: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 - DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output High-Voltage Outputs. ,50 V D OR N PACKAGE (TOP VIEW) 1B[

CSA940

Abstract: CSC2073
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSA940 CSC2073 CSA940, CSC2073 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications PIN CONFIGURATION

on 614 power transistor

Abstract: CSA614 CSD288 c120 transistor
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator PIN CONFIGURATION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL