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    TRANSISTOR A124 Search Results

    TRANSISTOR A124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor PNP A124

    Abstract: A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M
    Text: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. Marking STA124M Package Code A124


    Original     		PDF STA124M STC128M O-92M KST-I005-001 transistor PNP A124 A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M

    transistor PNP A124

    Abstract: A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001
    Text: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. STA124M Marking Package Code A124


    Original     		PDF STA124M STC128M O-92M KST-I005-000 -100mA -500mA, -50mA transistor PNP A124 A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001

    A1244

    Abstract: NPN S2D Q62702-A1244 SCT-595
    Text: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 92M s2D Q62702-A1244 Package


    Original     		PDF VPW05980 Q62702-A1244 SCT-595 Mar-13-1998 EHP00881 EHP00882 A1244 NPN S2D Q62702-A1244 SCT-595

    TRANSISTOR S1d

    Abstract: Q62702-A1243 SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package


    Original     		PDF VPW05980 Q62702-A1243 SCT-595 Jun-18-1997 EHP00842 EHP00843 TRANSISTOR S1d Q62702-A1243 SCT-595

    transistor a124es

    Abstract: A124e a124es a124* transistor DTA124EE DTA124EKA DTA124EM DTA124ESA DTA124EUA T106
    Text: DTA124EM / DTA124EE / DTA124EUA / DTA124EKA / DTA124ESA Transistor -100mA / -50V Digital transistors with built-in resistors DTA124EM / DTA124EE / DTA124EUA / DTA124EKA / DTA124ESA zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver


    Original     		PDF DTA124EM DTA124EE DTA124EUA DTA124EKA DTA124ESA -100mA transistor a124es A124e a124es a124* transistor DTA124ESA T106

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1241 2SC3076

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		PDF 2SA1244 2SC3074 a1244 Transistor a1244 2SA1244 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1241 2SC3076

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		PDF 2SA1244 2SC3074

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		PDF 2SA1244 2SC3074 Transistor a1244 a1244 2SA1244 2SC3074

    Transistor a1244

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		PDF 2SA1244 2SC3074 Transistor a1244

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		PDF 2SA1244 2SC3074 a1244 Transistor a1244 2SA1244 2SC3074

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41

    transistor a1241

    Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1241 2SC3076 transistor a1241 a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076

    A1244

    Abstract: Transistor a1244 a124* transistor 2sa1244 Equivalent 2SC3074 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		PDF 2SA1244 2SC3074 15oducts A1244 Transistor a1244 a124* transistor 2sa1244 Equivalent 2SC3074 2SC3074

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		PDF 2SA1244 2SC3074

    a1241 semiconductor

    Abstract: transistor a1241 a1241
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1241 2SC3076 a1241 semiconductor transistor a1241 a1241

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		PDF 2SA1244 2SC3074 Transistor a1244 a1244 2SA1244 2SC3074

    TRANSISTOR S1d

    Abstract: AX 1101
    Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type


    OCR Scan     		PDF Q62702-A1243 SCT-595 EHP00844 TRANSISTOR S1d AX 1101

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN II LD CO Q62702-A1244 II s2D o SMBTA 92M Pin Configuration CM Ordering Code II Marking 0Û


    OCR Scan     		PDF Q62702-A1244 SCT-595

    TRANSISTOR S2d

    Abstract: NPN S2D
    Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking


    OCR Scan     		PDF Q62702-A1244 SCT-595 300ns; TRANSISTOR S2d NPN S2D

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP II LD CO Q62702-A1243 II s1 D o SMBTA 42M Pin Configuration CM Ordering Code II Marking 0Û


    OCR Scan     		PDF Q62702-A1243 SCT-595