TRANSISTOR AL6 Search Results
TRANSISTOR AL6 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR AL6 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor. FEATURES * Built-in bias resistors that implies easy ON/OFF applications. |
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UD22K UD22K UD22KG-AL6-R OT-363 QW-R221-020 | |
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • DSG433A 0GQb4Q3 flb2 ■ AL6R SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic |
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DSG433A 14-pin TPQ2222A TPQ3904 TPQ6427 TPQA06 TPQ2907A TPQ3906 TPQA55 TPQ5401 | |
n24 transistorContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are |
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MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are |
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MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and |
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OT-363 QW-R218-026 | |
transistor Al6Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9K DUAL TRANSISTOR COMPOUND TRANSISTORS UG9K DESCRIPTION As a compound transistor with resistor, the UTC UG9K is for switching application. FEATURES * Silicon epitaxial type * The internal tow transistor elements are independent. |
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OT-363 OT-363 QW-R218-008 transistor Al6 | |
transistor Al6Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3PP Preliminary DUAL TRANSISTOR COMPOSITE TRANSISTORS UT3PP DESCRIPTION As a composite transistor with resistor, the UTC UT3PP is for switching application. FEATURES * Silicon Epitaxial Type * The Internal Tow Transistor Elements are Independent. |
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OT-363 QW-R218-009 transistor Al6 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9K DUAL TRANSISTOR COMPOUND TRANSISTORS UG9K DESCRIPTION As a compound transistor with resistor, the UTC UG9K is for switching application. FEATURES * Silicon epitaxial type * The internal tow transistor elements are independent. |
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OT-363 QW-R218-008 | |
AL6 markingContextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3PP Preliminary DUAL TRANSISTOR COMPOSITE TRANSISTORS UT3PP DESCRIPTION As a composite transistor with resistor, the UTC UT3PP is for switching application. FEATURES * Silicon Epitaxial Type * The Internal Tow Transistor Elements are Independent. |
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OT-363 OT-363 QW-R218-009 AL6 marking | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC856AS Preliminary DUAL TRANSISTOR DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR DESCRIPTION The UTC BC856AS is a dual PNP surface mount small signal transistor, it uses UTC’s advanced technology to provide customers |
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BC856AS BC856AS BC856ASG-AL6-R OT-363 QW-R206-108 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. |
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MMDT3906 MMDT3906 MMDT3906L-AL6-R MMDT3906G-AL6-R MMDT3906L-AL6-R OT-363 QW-R218-014 | |
free transistor and ic equivalent dataContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. |
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MMDT3906 MMDT3906 MMDT3906L-AL6-R MMDT3906G-AL6-R MMDT3906L-AL6-R OT-363 QW-R218-014 free transistor and ic equivalent data | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3946 Preliminary DUAL TRANSISTOR COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3946 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and |
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MMDT3946 MMDT3946 MMDT3946L-AL6-R MMDT3946G-AL6-R MMDT3946L-AL6-R OT-363 QW-R218-015ues QW-R218-015 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3904 NPN EPITAXIAL SILICON TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3904 is a dual NPN small signal surface mount transistor. FEATURES * Suitable for Low Power Amplification and Switching |
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MMDT3904 MMDT3904 MMDT3904G-AL6-R OT-363 QW-R218-013 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UB2K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL RANSISTORS DESCRIPTION As a dual digital transistor the UTC UB2K is epitaxial planar type PNP silicon transistor (built in resistor type). FEATURES * Two DTA144E chips in a SOT-363 package. |
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DTA144E OT-363 OT-363 QW-R218-006 | |
B 773 transistor
Abstract: 2N4403
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50433A T-91-01 G50433Ã G003b72 T-91-01 -al77 B 773 transistor 2N4403 | |
ULN-2082A
Abstract: ULN-2081 ULN2081A
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ULN-2081A ULN-2082A ULN-2081 -2082A ULN-2082A ULN2081A | |
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor |
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LM96163 LM96163 2N3904, | |
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor |
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LM96163 2N3904, | |
2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
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LM96163 LM96163 2N3904, 2N3904 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6 | |
RTU620Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta |
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LM96163 LM96163 SNAS433C RTU620 | |
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
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500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 | |
A1396Contextual Info: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper |
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05G433A 1000mA 00090sa A1396 | |
Contextual Info: AL LE GR O M I C R O S Y S T E M S INC T3 D WÊ 0 5 0 4 3 3 Ô O Ü Ü 3 7 b S 2 • AL6R T-91-01 P R O C E S S NJ42 Process NJ42 N-Channel Junction Field-Effect Transistor Process NJ42 is an N-channel junction field-effect transistor designed for use as a high-voltage, general-purpose amplifier in applications requiring the |
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T-91-01 00037bb |