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    TRANSISTOR AUDIO AMPLIFIER APPLICATION NOTE Search Results

    TRANSISTOR AUDIO AMPLIFIER APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AUDIO AMPLIFIER APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPA509TA

    Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
    Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor


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    PDF PA509TA SC-74A UPA509TA uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509

    M28S

    Abstract: M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio output driver amplifier * General purpose switch


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    PDF OT-23 M28SL M28SG M28SL-x-AE3-R M28SL-x-T92-B M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28SL-x-T92-K M28SG-x-AE3-R M28S M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92

    M28S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


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    PDF OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K M28S

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1  FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation  3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


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    PDF OT-23 M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SG-x-AE3-R M28SG-x-T92-B M28SG-x-T92-K QW-R201-015

    M28S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


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    PDF OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S

    M28S

    Abstract: transistor m28s
    Text: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch


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    PDF OT-23 M28S-x-AE3-R M28S-x-T92-B M28S-x-T92-K M28S-x-T92-R M28SL-x-AE3-R M28SL-x-T92-B M28SL-x-T92-K M28SL-x-T92-R M28SG-x-AE3-R M28S transistor m28s

    M28S

    Abstract: transistor m28s
    Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE


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    PDF 600mA QW-R201-015 M28S transistor m28s

    transistor m28s

    Abstract: No abstract text available
    Text: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE


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    PDF QW-R201-015 transistor m28s

    2SA562TM

    Abstract: 2SC1959
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.


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    PDF 2SA562TM 2SC1959. 2SA562TM 2SC1959

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTD1047B. ・Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING


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    PDF KTD1047B. KTB817B

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC5197 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Recommended for 55W Audio Frequency Amplifier Output Stage. ・Complementary to KTA1940. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING


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    PDF KTC5197 KTA1940.

    ULN3718M

    Abstract: power transistor audio amplifier 500 watts ULN3718 allegro radio 500 uf 1000 watts audio amplifier
    Text: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Data Sheet 27117.25 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other


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    PDF ULN3718M MA-001-8A power transistor audio amplifier 500 watts ULN3718 allegro radio 500 uf 1000 watts audio amplifier

    HN1B04F

    Abstract: No abstract text available
    Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity


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    PDF HN1B04F -400mA 400mA HN1B04F

    HN4B04J

    Abstract: No abstract text available
    Text: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity


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    PDF HN4B04J -400mA 400mA HN4B04J

    Untitled

    Abstract: No abstract text available
    Text: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity


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    PDF HN4B04J -400mA 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity


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    PDF HN1B04F 400mA

    HN1B04F

    Abstract: No abstract text available
    Text: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity


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    PDF HN1B04F -400mA 400mA HN1B04F

    2SB1115

    Abstract: 2SC1615 2SD1615 2SD1615A
    Text: DATA SHEET SILICON TRANSISTOR 2SD1615, 1615A NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


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    PDF 2SD1615, 2SB1115, 2SB1115 2SC1615 2SD1615 2SD1615A

    La 7676

    Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
    Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES


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    PDF 2SB1475 2SB1475 IEI-1209) La 7676 La 7676 data sheet marking b42 TC-2353 transistor B42 B44 transistor marking B44 marking B43 TRANSISTOR

    GP-009

    Abstract: ULN3718M
    Text: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other battery-operated equipment. The low-power audio amplifier’s wide


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    PDF ULN3718M GP-009

    KTC4468

    Abstract: KTA1695 12v audio amplifier 60W transistor ph 45 PH 33 G ph 33 j
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4468 TRIPLE DIFFUSED NPN TRANSISTOR AUDIO AND GENERAL PURPOSE APPLICATION FEATURES • Complementary to KTA1695. • Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC


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    PDF KTC4468 KTA1695. KTC4468 KTA1695 12v audio amplifier 60W transistor ph 45 PH 33 G ph 33 j

    KTB2955

    Abstract: KTD3055
    Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD3055 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB2955. • Recommended for 30W —35W Audio Frequency Amplifier output Stage. MILLIMETERS


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    PDF KTD3055 KTB2955. 220AB 100mS KTB2955 KTD3055

    TIP33C

    Abstract: TIP34C
    Text: SEMICONDUCTOR TECHNICAL DATA TIP34C EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP33C. • Recommended for 45W —50W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT


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    PDF TIP34C TIP33C. TIP33C TIP34C

    KTB2955

    Abstract: KTD3055 0,01 k 400mk
    Text: SEMICONDUCTOR TECHNICAL DATA KTB2955 TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTD3055. • Recommended for 30W —35W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT


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    PDF KTB2955 KTD3055. 220AB 100msi& 500ms5K; KTB2955 KTD3055 0,01 k 400mk