2SC1615 Search Results

c1615

Abstract: 2SC1615 ic 6802 2SC4036
Contextual Info: ROHM CO L T D MOE ' T A S A I T ! D Q Q 0 S b 3 fl h H R H M 2SC1615/2SC4036 h 7 > y ^ ^ / T ransistors “ T - 2 7 - Ö 7 H 2S C 1615 f i î È i è y L ^ - ^ N P N E I Î Œ ^ Œ iiÎ if f l/ H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors

c1615

Contextual Info: /T ra n s is to rs 2SC 1615 2SC 4036 • 2SC1615/2SC4036 H S IÈ i[ 7 ° U -^ -^ N P N y V = l > b - 7 > y Z 2 Triple Diffused Planar N PN Silicon Transistors Ü6ÎJŒ ^i±ii,lliffl/H igh Voltage Amp. • ii-J f^ > i® /D iin e n s io n s Unit : mm « a

2SC1651

Abstract: 2SC1650 2SC1613 2SC1649 2SC1614 2SC1615 2SC164
Contextual Info: P h ysica l Dim ension • (Ta=25°C ) (Absolute M aximum R atings) il a ^¡Ls9 9 - ^ —X M !± Z IU 9 9 -J: = y 9 M I± H ^ "J 9 ’ /K ZH /9 9 M ÎÊ 2SC1615, 2SC1651 2SC1614, 2SC1650 2SC1613, 2SC1649 2SC1615, 2SC1651 2SC1614, 2SC1650 2SC1613, 2SC1649

2SC403S

Abstract: 2SC1615 2SC4036
Contextual Info: Taafl^ MQE D ROHM CO LTD Doosbaa b h r h m h 7 > y X ^ / T ransistors 2SC1615/2SC4036 T-17-öy H 2 S C 1 6 1 5 2 S C 4 3 f i ^ i è 7 0^ - ^ N P N y '; z i> h 7 > ^ X ^ ¡S îIJ Æ B S ii'fiÆ Ï/H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors

Contextual Info: / T ransistors 2SC1615 A O C Z 5 w 2SC1615/2SC4036 NPN v ' J 3 > i^ i i J E I± i iltiffl/H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors 4 0 3 w • ÿj-fti^J'âHI/Dim ensions Unit : mm • < « 1)V cer=210V£® iiftEE7'< fc-50 2) =

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC2673

Abstract: 2SD1661M IMD3 ROHM equivalent lcm3000 2SA937LN 2SA937MLN 2SB821 2SC2063 imb8 2SC3078M
Contextual Info: □ 1 ROHM CORP DE I V ñ E ñ ' m DDDllSt. 1 • FTR, ATR Types * New Producís A Maintenance part. |v • / • .Function "TV Tuner Mix Osc. Chroma FM RF Mix Osc. FM IF Local Osc. Conv. AM RF Local Osc. Conv. 19 19 50 2SC4045 11 50 *2SC3270M 300 100 ’

Contextual Info: Transistors FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application | VCEO V *V CES * * V CER m . Part No. 2SA937ALN Low Noise - lc Max. (A) Pc (mW)

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2sd1469

Contextual Info: Transistors _ • j. « 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -

2sc1695

Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1601 35 100 200 175 150 6 1 200* 2 2SC1602 35 100 150 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Contextual Info: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application VCEO V FTL I * V CES ÄSiVcER Part No. 2SA937ALN 2SB821 Lew Noise 2SC1613A Drivor

2SA785

Abstract: 2SC2673 2SB821 2SA1561 2sa881 2sa790
Contextual Info: Tr T ransistors • Pin Inserting Transistors • FTR, FTL Types ir U n d e r D e v e lo p m e n t Type FTR 2SA937LN F u n c tio n FTL — 2SB821 2SB1276 2SC1613A 2SC4034 2SC2021LN 2SA785 L o w N o is e V c f„ V *Vcs.s ' ' V . ; -4 0 100 -4 0 -3 0 0 80

DG01D

Abstract: 82360 2SD1225
Contextual Info: ROHM COR? “ " TöD D | Medium Power Amplifiers b Vcbo Package Type Min. • PNP Transistors BVce O BVebo 'ÇBO @ V0B Min. Min. Max. RN5819 TO-92 EBC TO-92 (EBC) TO-92 (EBC) MPS4354 TO-92 (EBC) 60V 60V 5V 50nA 50V MPS4355 TO-92 (EBC) 60V 60V 5V 50nA 50V

2SD1615

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SD1615GM

Abstract: 2SB1115 2SC1615 2SD1615 2SD1615A
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SB1115

Abstract: 2SC1615 2SD1615 2SD1615A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: DATA SHEET NEC SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2 S D 1 6 1 5 , 1 6 1 5 A a r e d e s ig n e d f o r a u d io f r e q u e n c y p o w e r a m p lif ie r a n d s w it c h in g a p p lic a t io n , e s p e c ia lly

2SB1115

Abstract: 2SC1615 2SD1615 2SD1615A
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1615, 1615A NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

5810A

Abstract: 2SD1615A 2SD1615 2SB1115 2SC1615 GP135
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SC1583

Abstract: 2SC1594 2SC1592 2sc1567 2SC1595 2SC1515K 2SC1516K 2SC1517AK 2SC1645 2SC1545
Contextual Info: - 106 - m £ JE JÉ VCBO HV SW IC DC (V) (V) 2SC1515K (Ta=25t3,*EP(áTc=25,C ) u (A) D i « ^ D * i v.-. 1V.DU (W) (W) (max) (/¿A) 200 150 0.05 0.2 Vc b (V) m (min) m (max) ft tt VcE (V) (Ta=25°C) OEPÍátypíÜ] (max) (V) I c/ I e (A) (V) le (A) 0.1 20