TRANSISTOR B 116 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor marking WV2

Contextual Info: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated

TRIMMER cap no-2222 809 07015

Abstract: BD433 BLW77
Contextual Info: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am­

Philips FA 291

Abstract: ADB 646 BFT24 8891 702 P TRANSISTOR C 547 transistor
Contextual Info: b b i a i B l 0Q3BDÛ7 E l l M A p x ^roductspecjflcati^ Philips Semiconductors ^ NPN 2 GHz wideband transistor BFT24 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

transistor fp 1016

Abstract: BFQ34T ON4497 FP 801 UBB361
Contextual Info: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

transistor BR 471 A

Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BFQ65

Contextual Info: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz

BD443

Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

BFG65

Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332
Contextual Info: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .

E2p 96 transistor

Abstract: BFS17 BFS17A MSB003
Contextual Info: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

Contextual Info: bbsa^ai DD2S3bD b=i5 N AUER PHILIPS/DISCRETE NPN 2 GHz wideband transistor Philips Semiconductors DESCRIPTION • APX_ Product specification b?E D £ BFT25 PINNING NPN transistor in a plastic SOT23 envelope. PIN It Is primarily intended for use in RF low power amplifiers, such as in

Contextual Info: FF 200 R 12 KL Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 200 A RthCK lc Thermal properties DC, pro B austein/p e r module DC, pro Baustein /p e r module pro B austein/p e r module

TS142

Abstract: BFT25
Contextual Info: Philips Sem iconductor! 1 7 1 1 0 a a b □ D b 'ÌB g b ^ 3 • P H IN _ _ P r o ç U æ t^ jr e c fflc a ^ NPN 2 GHz wideband transistor ^ BFT25 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in

Contextual Info: KSB1116/1116A PN P EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING T O -8 2 • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Collector-Base Voltage Symbol K S B 1 116 K S B 1 116A KS B 1116

7901S

Contextual Info: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.

f22e

Abstract: Scans-0010547 din 867 BFT12 Q62702
Contextual Info: B FT12 l\IPI\l-Silizium-HF-Planar-Transistor B F T 1 2 is t ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B3 DIN 41 867 äh n l.T O -50 für allgemeine Verwendung in Verstärkern bis in den GHz-Bereich, z .B . für Breitbandantennenverstärker hoher Ausgangsleistung und Linearität sowie für Os­

P3H7

Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
Contextual Info: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high

c 879 transistor

Abstract: BFT24 t 326 Transistor 702 P TRANSISTOR
Contextual Info: Product specification Philips Sem iconductors Ê= NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL 5LE • D BFT24 B FT24 5 7110fl5b O G M S ^ b TMT « P H I N PINNING DESCRIPTION NPN transistor in a plastic SO T37 envelope. DESCRIPTION PIN 1 base It is prim arily intended for use in RF

BFR134

Contextual Info: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37

Contextual Info: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and

Contextual Info: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

Contextual Info: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.

BC369

Contextual Info: Jv BC369 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 package, intended fo r low voltage, high current LF applications. BC368/BC369 is the matched complementary pair suitable fo r class-B output stages up to 3 W.