TRANSISTOR B 595 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

BST122

Contextual Info: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.

transistor igbt

Abstract: BUK854-800A IEC134 T0220AB igbt buk854
Contextual Info: N AMER PHILIPS / D I S C R E T E bT E D • h b S B T a i □DBQ'iOG TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 PH ILIPS 7 ^ 3 ? ' ' ° 9 B U K 475-6 00B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUJ202

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T 0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors b bS 3T 31 0 031544 543 APX Product specification PNP 4 GHz wideband transistor BFQ32S N AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast

2SC5086

Contextual Info: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2—lld B f= 1GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

Contextual Info: J U fa i Coming Attractions M a n A M P ci o m p a n y Avionics Puised Power Transistor, 282W, TACAN Format 1025 -1150 MHz PH1012-282 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base C onfiguration B roadband Class C O peration

Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n

Contextual Info: Transistors I PNP General Purpose Transistor BC 858BW /BC 858B • F e a tu re s 1 ; B V c e o < — 3 0 V l c = — -1mA 2 ) C o m p le m e n ts the B C 8 4 8 8 /B C 8 4 8 B W . • E xtern a l dim ensions (Units : mm) B C 8 5 8 B W (UM T3) • P a c k a g e , marking and packaging specifications

Contextual Info: SIEMENS BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 80 8 Ò0 V b ^DS on Package Ordering Code 3.1 A 4n TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b Tc = 28 °C

QM15TB-24

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 1 5T B -24 • lc • Vcex • hFE Collector current. 15A Collector-emitter voltage.1200V DC current gain. 75

Contextual Info: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n

Contextual Info: M a n A M P com pany Radar Pulsed Power Transistor, 4W, 100p.s Pulse, 10% Duty 1.2-1.4 GHz PH1214-4M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d Class C O p eratio n Interdigitated G eo m etry

417 TRANSISTOR

Abstract: BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417
Contextual Info: BF415 *B F 417 NPN SILICON TRANSISTOR, E P IT A X IA L PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 416 and BF 418 îfc Preferred device D isp o sitif recommandé Video o utput stages in T V sets Etages de sortie des amplificateurs

TRANSISTOR S1d

Abstract: SCT-595
Contextual Info: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595

NPN S2D

Abstract: SCT-595 SCT59
Contextual Info: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking SMBTA 92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595

F10G

Contextual Info: A jt& w m m an A M P com pany RF MOSFET Power Transistor, 10W, 28V 500 -1000 MHz - A — - B -— r— Features • • • • • • LF2810A N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration Com m on Source Configuration

6010.5

Contextual Info: an A M P com pany Radar Pulsed Power Transistor, 80W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-80M Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n H igh Efficiency Interdigitated G eo m etry

Contextual Info: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n

LC8a

Abstract: LC12A
Contextual Info: NPN SILICON TRANSISTOR KSE13009F HIGH VOLTAGE SWITCH MODE APPLICATION TO-220F • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector B ase Voltage Collector Emitter Voltage

Contextual Info: Ordering number:EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. umt:mm • High breakdown voltage V c b o = 1 6 0 0 V .

PW400

Abstract: transistor b 595
Contextual Info: m M a n A M P com pany Radar Pulsed Power Transistor, 2W, lOO^s Pulse, 10% Duty 1.2-1.4 GHz PH1214-2M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p eration Interdigitated G eo m etry