TRANSISTOR B 974 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

philips blx15

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

Contextual Info: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to

transistor 9740

Contextual Info: Dia light Infrared Discrete LED Silicon PNP Photo Transistor 521 -9740 Features • • • • • Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability A B S O L U T E M A X IM U M R A T IN G S TA=25°C Operating and Storage

Contextual Info: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is

BFQ19

Abstract: UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor
Contextual Info: 1^53^31 DGSSDt.2 715 B A P X Philips Sem iconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AUER PHILIPS/DISCRETE DESCRIPTION b7E ]>' PINNING NPN transistor In a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

BLY87A

Abstract: D-05 blv87
Contextual Info: Ob E N AUER P H I L I P S / D I S C RE T E 86D 01878 r D D bbSBTBl 0 O l m i fa 1 • - BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to

Contextual Info: 7 ^ 7 D 7 b OGliHfl? 373 Ordering number:EN 1042F LB1211 Series NO.1042F Monolithic Digital IC SAKYO i General-Purpose Transistor Array The LB1211 series are general-purpose transistor arrays containing 7 channels 5 channels : LB1217 only . They are especially suited for driving LEDs, lamps, small-sized relays, etc. The transistors can be

2SD646

Abstract: toshiba 2SD646 U315 AC63
Contextual Info: 5/ ' J 3 > N P N = * f f i « * 1f l B h 5 > 5> ; ^ G - T R SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(G-TR m it n mm TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm O 9 f S fffì (52 # * m * * (w ñ m m High Power Switching Applications 6&s±ai w b b d

F10G

Contextual Info: A jt& w m m an A M P com pany RF MOSFET Power Transistor, 10W, 28V 500 -1000 MHz - A — - B -— r— Features • • • • • • LF2810A N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration Com m on Source Configuration

transistor bf 968

Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-| = 10ki , R2 = 47k£2) Ordering Code Pin Configuration WNs Q62702-C2280 1 =B Package 2=E o Marking BCR 185W II

23 LM CT05

Abstract: buz341 MS3456W32-17PW L/Q2N5550
Contextual Info: SIEMENS BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 341 200 V 33 A fbsion 0.07 n Package Ordering Code TO-218AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

014e1

Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

mje 1303

Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

HFA3102

Contextual Info: HFA3102 ÎH HARRIS S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Description Features H igh G a in -B a n d w id th P ro d u c t fT . . . . . 1 0G H z • H igh P o w er G a in -B a n d w id th P ro d u ct . . . 5GHz • H igh C u rre n t G a in (h FE) .

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

Ug 78A

Abstract: BUZ78 BUZ 78
Contextual Info: SIEM EN S SIPMOS Power MOS Transistor Vos lD = 800 V = 1 .5 A ^ D S o n = 8 BUZ 78 Q • N channel • E nhancem ent mode • Package: T O -2 2 0 A B 1) Type Ordering code BUZ 78 C 6 70 78-A 131 8-A2 Maximum Ratings Parameter Symbol Values Unit D rain-so urce voltage

MRF172

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF172 The RF MOSFET Line 80 W 2 .0 - 2 0 0 M Hz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . d e s ig n e d p rim a r ily fo r w id e b a n d la rg e - s ig n a l o u tp u t a n d d riv e r

Contextual Info: RF Up/Down Conversion Is Simplified By Linear Arrays M AR JRiS S Semiconductor A p p lic a tio n N ote J u ly 1997 Linear Arrays Have Advantages Over Discrete Transistors D iscrete transistors h ave b e e n used to build R F up/dow n co n verte rs in th e p as t b e c a u s e th ey w e re th e only cost effe c­