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    TRANSISTOR B35 Search Results

    TRANSISTOR B35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3735

    Abstract: hFE CLASSIFICATION Marking B35 2SA1462 b35 sc-59
    Text: DATA SHEET SILICON TRANSISTOR 2SC3735 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR <R> FEATURES PACKAGE DRAWING Unit: mm • High-speed switching 2.8±0.2 +0.1 0.4 –0.05 • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance


    Original     		PDF 2SC3735 2SC3735 hFE CLASSIFICATION Marking B35 2SA1462 b35 sc-59

    hFE CLASSIFICATION Marking B35

    Abstract: 2SA1610 TC-2104 2SC4176 Mark B34 NPN
    Text: DATA SHEET SILICON TRANSISTOR 2SC4176 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR <R> FEATURES PACKAGE DRAWING Unit: mm • High-speed switching 2.1±0.1 1.25±0.1 • Low collector saturation voltage • High gain bandwidth product 2 3 1 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)


    Original     		PDF 2SC4176 hFE CLASSIFICATION Marking B35 2SA1610 TC-2104 2SC4176 Mark B34 NPN

    74als power consumption

    Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
    Text: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low


    Original     		PDF

    FET 4900

    Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		PDF CPC5602C CPC5602C OT-223 DS-CPC5602C-Rev. FET 4900 CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602CTR CPC5604A CPC5610A CPC5611A

    Untitled

    Abstract: No abstract text available
    Text: 19-4706; Rev 0; 7/09 MAX17100 Evaluation Kit The MAX17100 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays (LCDs). The


    Original     		PDF MAX17100 500mA regulato00 MAX17100

    LOC110

    Abstract: 314 optocoupler isolator transformer loop power ITC117P optocoupler 202 electronic schematic CP Clare RELAY opto-coupler AN
    Text: APPLICATION NOTE AN-114 ITC117P Integrated Telecom Circuit AN-114 Clare’s Integrated Telecom Circuit ITC117P features combined circuitry in one 16 Pin SOIC package for: • • • • 1-Form-A Solid State Relay for use as Hookswitch Bridge Rectifier Darlington Transistor


    Original     		PDF AN-114 ITC117P ITC117P) AN-114-R1 LOC110 314 optocoupler isolator transformer loop power optocoupler 202 electronic schematic CP Clare RELAY opto-coupler AN

    rp110n261

    Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
    Text: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC


    Original     		PDF RP110x 150mA EA-239-131023 Room403, Room109, 10F-1, rp110n261 RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5

    IF3602

    Abstract: transistor b35 B-35 transistor NJ3600L 03nv B35 equivalent
    Text: Databook.fxp 1/13/99 2:09 PM Page B-35 B-35 01/99 IF3602 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF IF3602 NJ3600L IF3602 transistor b35 B-35 transistor NJ3600L 03nv B35 equivalent

    CD860

    Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
    Text: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation


    Original     		PDF IFN5911, IFN5912 IFN5911 CD860 IFN860 NJ3600L IF3602 IFN5911 IFN5912

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 200ns). The mounting base of the


    OCR Scan     		PDF 200ns)

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­ dent, eliminating interference.


    OCR Scan     		PDF 2SA1036K -500mA SC-74 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    B35AP

    Abstract: No abstract text available
    Text: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The


    OCR Scan     		PDF bbS3S31 BFQ34T ON4497) B35AP

    Untitled

    Abstract: No abstract text available
    Text: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF D014b33 BUZ63_ bbS3T31 T-39-11 BUZ63 14h3fl III11 i111111

    lkt 108

    Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 10-1BI= 10-1B2 2SC3735 NECTOKJ22686 lkt 108 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34

    2SC3735

    Abstract: No abstract text available
    Text: SEC ELECTRONDEVICE / / SILICON TRANSISTOR J 2SC3735 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in m illim e te rs • High Speed: t on < 12 ns to ff< 1 8 n s 2 . 8 ± 0.2 0 -6 5 i g U ABSOLUTE M A XIM U M RATINGS


    OCR Scan     		PDF 2SC3735 2SC3735

    ca3096

    Abstract: CA3096AE
    Text: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C CA3096. ca3096 CA3096AE

    BLF543

    Abstract: 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips
    Text: Product specification Philips Semiconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF543 SbE D • 711Dfl2b 50b « P H I N PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability


    OCR Scan     		PDF BLF543 711Dfl5b OT171 OT171 BLF543 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips

    TRANSISTOR S 813

    Abstract: BFQ265 BFQ265A NPN high frequency
    Text: ^^»r«Juc^pM jficatjon Philips Semiconductors NPN high frequency high voltage transistor PHILIPS 5bE T> INTERNATIONAL FEATURES m 711062b BFQ265; BFQ265A □□4ShS3 7TT • P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter PIN


    OCR Scan     		PDF OT128B BFQ265; BFQ265A 711062b t-33-05 711062L TRANSISTOR S 813 BFQ265 BFQ265A NPN high frequency

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated


    OCR Scan     		PDF 900MHz Q62702-F1531 OT-363 BFS480 fl235b D1E5173

    Untitled

    Abstract: No abstract text available
    Text: rSTOKO TK702XX 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Input Voltage Operation Single Battery Cell ■ Internal PNP Transistor ■ Pagers ■ Built-In Shutdown Control (Off Current, 8 |iA Typ) ■ Low Dropout Voltage (30 mV Typ)


    OCR Scan     		PDF OT-25) TK702XX TK702XX 0003b3b QDG3b37 TK70203

    A1567

    Abstract: NDB7060L NDP7060L transistor b35 A-1567
    Text: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP7060L/NDB7060L bS0113D A1567 NDB7060L NDP7060L transistor b35 A-1567

    MCB700

    Abstract: n7000 A 673 C2 transistor 2n7000 Lk53
    Text: Philips Components 2N7000 Data sheet status Product specification date o f Issue October 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low R 0S on SYMBOL • Direct interface to C-MOS, TTL, etc. Vos drain-source voltage


    OCR Scan     		PDF 2N7000 VeSimat25 003b232 ZN7U00 bLS3T31 003b233 MCB700 n7000 A 673 C2 transistor 2n7000 Lk53

    ceramic capacitor philips 561

    Abstract: AI mm sot 553 BLV98CE IEC134 transistor k 117 GR
    Text: N AMER PHILIPS/DISCRE TE bTE J> >hiliDs Semiconductors BLV98CE Data sheet status Product specification date of issue March 1 9 9 3 bbS3T31 ODe^lflD 2flG * A P X UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain


    OCR Scan     		PDF BLV98CE bbS3T31 OT-171 uca924 ceramic capacitor philips 561 AI mm sot 553 BLV98CE IEC134 transistor k 117 GR

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors bt.S3R31 O O E ^ m HT5 W A P X P roduct spe cifica tion VHF power MOS transistor BLF225 — N AUER PHILIPS/DISCRETE FEATURES blE » PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.


    OCR Scan     		PDF S3R31 BLF225 OT123 -SOT123 bbS3T31