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    TRANSISTOR BD 430 Search Results

    TRANSISTOR BD 430 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 430 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sc 103 transistor

    Abstract: transistor BD 430
    Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in


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    Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430 PDF

    Q62702-D1070

    Abstract: TRANSISTOR D 1785 BD430
    Contextual Info: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


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    T-33-/7 Q62702-D1070 fl23Sb05 Q0043b2 BD430 Q62702-D1070 TRANSISTOR D 1785 BD430 PDF

    transistor BD 430

    Abstract: 0436L
    Contextual Info: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


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    fl23Sb05 0D043fal 0436L fl335b05 Q0043b2 transistor BD 430 0436L PDF

    Contextual Info: y i / i y j x i y n -48V to +5V Output Switching DC-DC Converter _ G eneral Description _ Features The MAX650 is a low -pow er fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. All control functions and a 140V,


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    MAX650 250mA AX650 388mm) MAX650 PDF

    AFD 0512

    Contextual Info: y ^ i / i x i y y i •48V to +5V Output Switching DC-DC Convertor _ Features The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. All control functions and a 120V,


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    250mA MAX650 MAX650 addi18 AFD 0512 PDF

    transistor BU 5027

    Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
    Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im


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    KT315 Indikatoransteuerung02 136/G ASZ1016 transistor BU 5027 transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor Transistor KU 607 MDA 2020 RFT e 355 d PDF

    pin diagram of 8355

    Abstract: s-8357h52mc 1824 ic 8355 S-8355M50MC S-8355M50MC-MDJ-T2 sot-23-5 321 nichicon capacitor bd shindengen MC
    Contextual Info: S-8355/56/57/58 Series www.sii-ic.com STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER Rev.7.0_00 Seiko Instruments Inc., 2002-2010 The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage


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    S-8355/56/57/58 S-8355/57 S-8356/58 pin diagram of 8355 s-8357h52mc 1824 ic 8355 S-8355M50MC S-8355M50MC-MDJ-T2 sot-23-5 321 nichicon capacitor bd shindengen MC PDF

    ic 1105

    Contextual Info: Rev.6.3_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an


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    S-8355/56/57/58 S-8355/57 S-8356/58 ic 1105 PDF

    Contextual Info: Rev.6.4_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an


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    S-8355/56/57/58 S-8355/57 S-8356/58 PDF

    S-8358B36MC-NQVT2G

    Abstract: pin diagram of 8355 nichicon capacitor bd S-8355Q45MC-OXET2G S-8355M50MC s-8358b40mc-nqzt2 s-8358b40mc-nqzt2g S-8355M65MC-MDYT2G S-8355Q30MC-OWPT2G S-8357B30MA-NIPT2G
    Contextual Info: Rev.6.6_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an


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    S-8355/56/57/58 S-8355/57 S-8356/58 S-8358B36MC-NQVT2G pin diagram of 8355 nichicon capacitor bd S-8355Q45MC-OXET2G S-8355M50MC s-8358b40mc-nqzt2 s-8358b40mc-nqzt2g S-8355M65MC-MDYT2G S-8355Q30MC-OWPT2G S-8357B30MA-NIPT2G PDF

    transistor BD 329

    Abstract: 6-pin SNB 13003 E TRANSISTOR transistor BD 325
    Contextual Info: S-8355/56/57/58 Series www.sii-ic.com STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER Rev.7.0_00 Seiko Instruments Inc., 2002-2010 The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage


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    S-8355/56/57/58 S-8355/57 S-8356/58 transistor BD 329 6-pin SNB 13003 E TRANSISTOR transistor BD 325 PDF

    S-8355Q45MC-OXET2G

    Contextual Info: Rev.6.5_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an


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    S-8355/56/57/58 S-8355/57 S-8356/58 S-8355Q45MC-OXET2G PDF

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    PDF

    Contextual Info: S V IS llK A S V l -48V to + 5V O utput S w itch in g DC-DC C otnrm ter The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. Alt control functions and a 120V, 250mA PNP transistor are contained in this device, re­


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    MAX650 250mA PDF

    Contextual Info: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


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    BSS83 OT143 PDF

    Contextual Info: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


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    711002b BSS83 OT143 PDF

    transistor d 1557

    Contextual Info: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


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    BSS83 OT143 transistor d 1557 PDF

    diode BY239

    Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
    Contextual Info: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency


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    LLE16045X diode BY239 bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55 PDF

    j78 transistor equivalent

    Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


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    LLE16045X OT437A. j78 transistor equivalent Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    transistor BD 430

    Abstract: Depletion
    Contextual Info: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


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    bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion PDF

    transistor BC 552

    Abstract: 320 265v PTH8L Thermistor PTC 265V TRANSISTOR BC 553 PTGL05AR151H8P52BO 265V PTC transistor BC 185 transistor bd 180 PTH8L07
    Contextual Info: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTGL/PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


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    CG01-J transistor BC 552 320 265v PTH8L Thermistor PTC 265V TRANSISTOR BC 553 PTGL05AR151H8P52BO 265V PTC transistor BC 185 transistor bd 180 PTH8L07 PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    BLX14

    Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
    Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z


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    BLX14 BLX14 philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull PDF