TRANSISTOR BD 800 Search Results

TRANSISTOR BD 800 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD 800 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	PDF	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
BD165 Abstract: TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data Text: MOTOROLA Order this document by BD165/D SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi	Original	PDF	BD165/D* BD165/D BD165 TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data
BD140 application circuits circuits Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138 Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	PDF	BD136/D* BD136/D BD140 application circuits circuits transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138
BD139 MOTOROLA Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135 Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	PDF	BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
Untitled Abstract: No abstract text available Text: Rev.4.0_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM	Original	PDF	S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57
ic 8355 Abstract: 6 pin current control forward dc to dc converter S-8355M50MC-MDJ-T2 pin diagram of 8355 S-8355M50MC 3.40 pf variable capacitor S-8356Q50MC-OVJ-T2 power pwm switch S-8357B32MC-NQR-T2 S-8357B50MA-NJJ-T2 Text: Rev.4.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM	Original	PDF	S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 ic 8355 6 pin current control forward dc to dc converter S-8355M50MC-MDJ-T2 pin diagram of 8355 S-8355M50MC 3.40 pf variable capacitor S-8356Q50MC-OVJ-T2 power pwm switch S-8357B32MC-NQR-T2 S-8357B50MA-NJJ-T2
Untitled Abstract: No abstract text available Text: Rev.2.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM	Original	PDF	S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57
transistor BD 325 Abstract: BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA Text: MOTOROLA Order this document by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE	Original	PDF	BD157/D* BD157/D transistor BD 325 BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1011M800 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M800 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S pulse burst conditions at	Original	PDF	IB1011M800 IB1011M800 IB1011M800-REV-NC-DS-REV-NC
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S800 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S800 is designed for L-Band avionics systems operating at 1025 to 1150 MHz.	Original	PDF	IB1012S800 IB1012S800 IB1012S800-REV-PR1-DS-REV-NC
TMOS power FET Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135 Text: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This	Original	PDF	MMFT3055V/D MMFT3055V OT-223 MMFT3055V/D* TMOS power FET MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135
transistor BD 736 Abstract: TRANSISTOR bd 737 Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC	Original	PDF	MMJT350T1 OT-223 transistor BD 736 TRANSISTOR bd 737
BD 140 transistor Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	PDF	MMJT9435/D MMJT9435 BD 140 transistor MMJT9435 MOTOROLA TRANSISTOR motorola bjt
BD 140 transistor Abstract: BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410 Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	PDF	MMJT9410/D MMJT9410 BD 140 transistor BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410

step-down sot-23-5 input Abstract: No abstract text available Text: Rev.4.2_01 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an	Original	PDF	S-8355/56/57/58 S-8355/57 S-8356/58 step-down sot-23-5 input
transistor BD 800 Abstract: transistor BD 110 Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal	OCR Scan	PDF	A235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 800 transistor BD 110
transistor BC 247 Abstract: BC 247 b transistor Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445	OCR Scan	PDF	NTE74426 14-Lead NTE74LS445 16-Lead NTE74S474, 24-Lead NTE74S475 4096-Bit NTE74HC574, 20-Lead transistor BC 247 BC 247 b transistor
42t sot-23 Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715 Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen	OCR Scan	PDF	BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
transistor D 2394 Abstract: f173 fp302 Text: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.	OCR Scan	PDF	FP302 FP302 2SC4520 SB05-05CP, 470//F transistor D 2394 f173
microwave oscillator Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854 Text: NEC/ BD CALIFOR NIA OODOlET 3 \| 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS	OCR Scan	PDF	3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE56854
SB1335A Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041 Text: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.	OCR Scan	PDF	O-220 T0-220FP O-220FN O-220FP T0-220 O-220FN SB1335A 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
D679A Abstract: BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P la s tic M e d iu m -P o w e r S ilicon NPN D arlin gto n s . . . for use as output devices in complementary general-purpose amplifier applica tions. • High DC Current Gain — hpE = 750 Min @ lc = 1-5 and 2.0 Adc	OCR Scan	PDF	BD675, BD676, 7677A BD679 BD681 D679A BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670
transistor BD 522 Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800 Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M \| BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	PDF	b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
transistor BD 540 Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E \| b [ m 7 f i a DOGObS? D \| 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches	OCR Scan	PDF	609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108

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TRANSISTOR BD 800 Search Results

TRANSISTOR BD 800 Result Highlights (5)

TRANSISTOR BD 800 Datasheets Context Search

pin configuration transistor bd140

BD165

BD140 application circuits circuits

BD139 MOTOROLA

Untitled

ic 8355

Untitled

transistor BD 325

Untitled

Untitled

TMOS power FET

transistor BD 736

BD 140 transistor

BD 140 transistor

step-down sot-23-5 input

transistor BD 800

transistor BC 247

42t sot-23

transistor D 2394

microwave oscillator

SB1335A

D679A

transistor BD 522

transistor BD 540