TRANSISTOR BD139 N Search Results

TRANSISTOR BD139 N Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8

TRANSISTOR BD139 N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor BD139 N Abstract: TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 TRANSISTOR NPN BD140 bd139 data sheet BD139 transistor BD139 NPN transistor download datasheet Contextual Info: BD135 BD137/BD139 NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi	Original	BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. transistor BD139 N TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 TRANSISTOR NPN BD140 bd139 data sheet BD139 transistor BD139 NPN transistor download datasheet	PDF
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80	OCR Scan	KSD135/137/139 BD140 BD137 BD139 BD135 BD137,	PDF
transistor BD 141 Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram	PDF
TRANSISTOR BD 136 Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 Contextual Info: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140	PDF
BD139 Abstract: BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD136 BD137 BD140 bd139 Complement Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135	Original	KSD135/137/139 O-126 BD136 BD140 BD135 BD137 BD139 BD139 BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD137 bd139 Complement	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR（NPN） TO-126 FEATURES •High Current 1.5A 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA	PDF
Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES High current max.1.5A Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS	Original	BD139 O-251 150mA 500mA 150mA, 100MHz QW-R213-010	PDF
BD139 application Abstract: BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES High current max.1.5A Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS	Original	BD139 O-251 QW-R213-010 BD139 application BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn	PDF
Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES High current max.1.5A Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS	Original	BD139 O-126 BD139-10 BD139-16 150mA 500mA 150mA, 100MHz QW-R204-007	PDF
BD139 transistor Abstract: BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Operating and storage junction temperature range	Original	O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 BD139 transistor BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES •High Current(1.5A) 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted )	Original	O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA	PDF
bd139 application note Abstract: BD139 NPN BD139 application Contextual Info: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES High current max.1.5A Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS	Original	BD139 O-126 Tmb70 QW-R204-007 bd139 application note BD139 NPN BD139 application	PDF
BD136 Abstract: power transistor bd136 BD138 BD139 BD140 of transistor BD140 bd139 140 transistor BD138 of ic BD140 bd138 hfe Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/138/140 TRANSISTOR PNP TO – 126 FEATURES z High Current z Complement To BD135, BD137 And BD139 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	O-126 BD136/138/140 BD135, BD137 BD139 BD136 BD138 BD140 BD136 power transistor bd136 BD138 BD139 BD140 of transistor BD140 bd139 140 transistor BD138 of ic BD140 bd138 hfe	PDF
transistor bd139 Abstract: BD136 bd140 Complement Contextual Info: BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD136/138/140 BD135, BD137 BD139 O-126 BD136 BD138 BD140 transistor bd139 BD136 bd140 Complement	PDF

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD139L-xx-T60-K BD139G-xx-T60-K	Original	BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T	PDF
BD139 MOTOROLA Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135 Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135	PDF
BD140 pnp transistor Abstract: BD139 BD140H BD140 Contextual Info: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD139. D C E F G H DIM A B C D E F G H J K L M N O P	Original	BD140 40Min. BD139. BD140 pnp transistor BD139 BD140H BD140	PDF
Contextual Info: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD139. D C E F G H DIM A B C D E F G H J K L M N O P	Original	40Min. BD139. BD140	PDF
BD139H Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J	Original	40Min. BD140. BD139 BD139H	PDF
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD138 - 60 V : BD140 - 80 V - 45 V C ollector Base Voltage	OCR Scan	BD136/138/140 BD135, BD139 BD138 BD140 BD136	PDF
BD139H Abstract: power transistor bd139 data sheet of bd139 BD139 BD140 transistor BD139 N BD139 p Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J	Original	BD139 40Min. BD140. BD139H power transistor bd139 data sheet of bd139 BD139 BD140 transistor BD139 N BD139 p	PDF
Contextual Info: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES D C E High Current. Max. : -1.5A F DC Current Gain : hFE=40Min. @IC=-0.15A Complementary to BD139. G H DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25	Original	BD140 40Min. BD139. -30mA, -150mA, -500mA, -50mA -500mA	PDF
bo 139 Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140 Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T \| XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140	PDF
BDXXX Abstract: BDxxx-10 Contextual Info: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits.	OCR Scan	BD135 BD137 BD139 OT-32 6D136, BD138 BD140are BD135, BD137 BD139 BDXXX BDxxx-10	PDF

TRANSISTOR BD139 N Search Results

TRANSISTOR BD139 N Result Highlights (5)

TRANSISTOR BD139 N Datasheets Context Search

transistor BD139 N

transistor BD 141

TRANSISTOR BD 136

BD139

BD139 application

BD139 transistor

bd139 application note

BD136

transistor bd139

BD139 MOTOROLA

BD140 pnp transistor

BD139H

BD139H

bo 139

BDXXX