TRANSISTOR BH PNP Search Results

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

147 B transistor

Abstract: Transistor 2SB 148 2SB1386 2sb transistor
Contextual Info: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A

sc59

Abstract: BH ar transistor 2PB709R 2PB709S 2PD601A lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q
Contextual Info: Philips Semiconductors H 7 1 1 0 fi2 b 0 G7 D0 1 S b 4 fi IH P H IN PNP general purpose transistor FEATURES Objective specification 2PB709; 2PB709A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. & DESCRIPTION a PNP transistor in a plastic SC59

transistor smd bh

Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

transistor 224-1 base collector emitter

Contextual Info: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura­

SOT89 transistor marking 4A

Abstract: marking 4a sot-89 Marking BH SOT89 BTB1427M3 sot-89 MARKING CODE 4A BTB1386M3 4A SOT89 MARKING CODE
Contextual Info: CYStech Electronics Corp. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features • Low VCE sat , VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics

MCN transistor

Abstract: BSS44
Contextual Info: SGS-TtiOMSON »eiamtieìMoes BSS44 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications

marking codes BH sot-23 IN SEMICONDUCTOR

Abstract: BCX71G marking codes transistors sot-23 transistor marking code 012 PNP Epitaxial Silicon Transistor sot-23 sot-23 marking code BCX71 BCX71H BCX71J BCX71K
Contextual Info: BCX71 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

transistor c 2053

Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A
Contextual Info: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2

BCX71J

Abstract: BJ MARKING CODE BH Ra BCX71 BCX71G BCX71H BCX71K transistor BG 23 bk sot 23 marking
Contextual Info: BCX71 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose

2PD601A

Contextual Info: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59

2SA1117

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation

c815

Abstract: C815M sot-89 MARKING CODE 4A BTB1386M3 BTD2098M3
Contextual Info: CYStech Electronics Corp. Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features • Low VCE sat , VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics

Contextual Info: BCX71 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose

Contextual Info: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1399 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1399 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING ¿5.1 MAX

BCV62C

Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks

bf679t

Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
Contextual Info: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages

high voltage npn transistor SOT-89

Abstract: FHBCX53
Contextual Info: ྯ૵਌ NPN Silicon AF Transistor FHBCX56 NPN Silicon AF Transistor ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1 For AF driver and output stages 2)High collector current 3)Low Collector-Emitter Saturation Voltage 4)Complement types:FHBCX53 PNP) SOT-89

5Ct transistor

Abstract: transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC807W; BC808W FEATURES PINNING • High current max. 500 mA • Low voltage (max. 45 V). PIN 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector General purpose switching and amplification.

diode tfk

Abstract: tfk 4 132 tfk 540 AM antenna coil bumper BA679 BC558 U4253BM U4253BM-AFP
Contextual Info: U4253BM AM/FM - Antenna Impedance Matching IC * The U4253BM is an integrated AM/FM antenna impedance matching circuit in BICMOS technology. The device is designed in particular for car application and is suitable for windscreen and roof antennas. Gm bH Description